KYOSEMI Search Results

uv detector

Abstract: uv sensors uv PHOTO detector 340nm
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . SMD Type GaN UV Detector KPDU34PS1 Features ・Wide sensitivity covering both UV-A and UV-B radiations ・Blindness to visible light: typical sensitivity ratio, R(600nm)/R(340nm)<1/5000 ・Low dark current with a photovoltaic mode

KPT801C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Si Phototransistor KPT801C Features •NPN phototransistor •Ceramic package •Low leak current Dimensions (unit: mm) Applications •Optical switches •Optical encoders •Photo-isolators

KPD101M32

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Si Photodiode KPD101M32 Features •Transparent epoxy mold •High sensitivity Dimensions (unit: mm) Applications •Optical Optical switches •Optical encoders •Pulse detectors •Sensors and industrial controls

InGaAs array 1550nm

Abstract: InGaAs Photodiode 1550nm Photodiode 1550nm bandwidth InGaAs photodiode array chip 1550nm photodiode 8 Ghz
Contextual Info: KPA4-2N/8-2N 4/8 Channel InGaAs Photodiode Array Description 4- and 8-channel arrays with 250 micron (KPA4-2N and KPA8-2N, respectively) pitch are available as a standard product. Other number of channels, array pitch or a Si bench assembled array are available as

3v LED 50ma

Abstract: KED050CXH TA 7312 IR LED 810 nm
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Point-source Infrared LED KED050CXH Features •High reliability and long life •50µm emitting area Dimensions (unit: mm) Applications •High speed optical sensors Optical Encoders •Optical

Infrared phototransistor TO18

Abstract: LP880
Contextual Info: Si Phototransistor KPT813K KPT813KB KPT813K K3 Transparent epoxy resin ø4.2 2.0 • NPN phototransistor packaged in a 3 leads TO-18 for the base connection • Transparent epoxy lens 813K or visible-cut black epoxy lens(813KB) • Low leak current 20 Applications

KED574M31

Abstract: D570
Contextual Info: AlGaInP Reddish-Orange LED KED574M31 KED574M31 Features φ3.8±0.2 • High luminous Intensity • Direct modulation 5.3±0.3 Applications 0.8±0.3 φ3.0±0.2 • Optical switches • Automatic control apparatus 24MIN 1.5MAX • Optical instruments 1 MIN 2

kpdx2ge spec

Abstract: KPDX2GE
Contextual Info: KPDX2GE 2.5Gbps PD-TIA Receiver with Long Focal Length Features • Long wok distance between PD can and fiber for integrating optical parts • Low noise and high gain transimpedance amplifier built-in to meet OC-48 • 5 pin package available for an independent PD

KPT811

Abstract: KPT811H TF 5367
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Si Phototransistor KPT811H Features • NPN phototransistor packaged in a 3 leads TO-18 for the base connection • Glass lens • Low leak current Dimensions (unit: mm) Applications • Optical switches

660 880 940 led

Abstract: KED541H
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi-wavelength LED KED541H Features •Red and IR emitters in a single package •Sharp directivity with a glass lens •Highly reliable hermetic seal •Direct modulation Dimensions (unit: mm)

mm glass lens phototransistor

Abstract: kpt801h Infrared phototransistor TO18 glass lens phototransistor
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Si Phototransistor KPT801HB Features •NPN phototransistor packaged in a 2 leads TO-18 •Glass lens or visible-cut black epoxy lens •Low leak current Dimensions (unit: mm) Applications •Optical switches

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Si Photodiode KPD30S Features •Transparent epoxy mold •High sensitivity Dimensions (unit: mm) Applications •Optical switches Optical encoders •Optical •Pulse detectors •Sensors and industrial controls

phototransistor peak wave sensitivity 600 nm

Abstract: C8060
Contextual Info: Si Phototransistor KPT801C KPT801C Features • NPN phototransistor C7 +0.3 ø2.96 –0.1 Transparent epoxy resin Black Ceramic 2.0 • Low leak current +0.3 3.2 –0.2 • Ceramic package • Optical switches ø0.45 • Optical encoders ø0.3 15.5±1.0 Applications

KED080DXH

Contextual Info: Point-source Infrared LED KED080DXH K ED080DXH Features • Hig h reli abili ty and lo ng life φ4.65±0.08 Ｎｉ Plating Flat Glass Applications • High speed optical sensors 14±1 0.5 max 0.5 max 2.7±0.25 • 80µm dia. emitting area φ0.45 • Optical Encoders

KED1201H

Abstract: KED1203H KPD1201H KPD1203H KPD1203
Contextual Info: Si Photodiode KPD1201H KPD1203H KED1201H Features H1 ø4.7±0.1 Glass lens 6.6 max • Hermetic seal type for high reliability uses 4.5 • Wide operating temperature • Glass lens 1201H or flat-glass window(1203H) 13.5 • Unbiased for low frequency or biased for high frequency measurement

KPDG008

Abstract: TO46 package PIN PD
Contextual Info: KPDG008, KPGX2G tentative GaAs PIN PD/ PD-TIA Features • Low capacitance and high speed with a PIN structure • Low dark current • Low voltage operation 3.3 to 5.0V • High reliability • Pigtail type is available as an option Applications • Digital and analog optical VSR communication

KPD1203

Abstract: KPD1203K
Contextual Info: KPD1203K Si Photodiode Features K1 KPD1203K • Transparent epoxy potting Transparent epoxy resin • High sensitivity ø4.2 2.0 • Unbiased for low frequency or biased for high frequency measurement 3.0±0.3 • Broad directivity 13.5 Applications • Optical switches

TA 7311

Abstract: TA 7312 TA 7311 transistor TA 8823 80um Kyosemi 5351 KPDE008-BP13
Contextual Info: KPDE008-BP13 1.3µm Bandpass PD Features • Low capacitance and high speed with a PIN structure • Low dark current • Low voltage operation • High reliability • Pigtail type is available as an option Applications • FTTH, FTTB • Digital and analog optical communication

KED574M51

Contextual Info: AlGaInP Greenish-Yellow LED KED574M51 KED574M51 Features 5.7±0.2 • High luminous Intensity • Direct modulation ø5.0±0.2 • Optical instruments • Automatic control apparatus 24MIN 1.5MAX • Optical switches 1±0.5 7.7±0.5 Applications 1 MIN 2 1

KPD3065C

Abstract: KPD3065
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Si Photodiode KPD3065C Features •Transparent epoxy potting •High sensitivity Dimensions (unit: mm) Applications •Optical switches Optical encoders •Optical •Pulse detectors •Sensors and industrial controls

high power infrared led

Abstract: KED358HQ-N KED358
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . GaAlAs High Power Infrared LED KED358HQ-N Features •Parallel beam •High output power •Highly reliable hermetic seal •Uniform light intensity distribution Dimensions (unit: mm) Applications

npn phototransistor

Abstract: phototransistor 600 nm
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Si Phototransistor KPT081M31 Features •NPN phototransistor •Transparent epoxy mold •Low leak current Dimensions (unit: mm) Applications •Optical switches •Optical encoders •Photo-isolator

KED614M31

Contextual Info: AlGaInP Reddish-Orange LED KED614M31 KED614M31 Features φ3.8±0.2 • High luminous Intensity • Direct modulation 5.3±0.5 Applications 0.8±0.5 φ3.0±0.2 • Optical switches • Automatic control apparatus 24MIN 1.5MAX • Optical instruments 1 MIN 2

Kyosemi Corporation

Abstract: KDA16S
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Preliminary Silicon Photodiode Array KDA16S Features •16 channel arrayy •Transparent epoxy mold SMD package Dimensions (unit: mm) Applications •Optical switches •Optical encoder •Pulse detectors