KU 608 Search Results

Contextual Info: Optiva OTS-2: Ku-Band RF Fiber Optic Transport System DATASHEET | JUNE 2013 SATCOM Ku-Band RF Fiber Optic Transport System System The Optiva OTS-2 Ku-Band transmitter and receiver are ideal to construct downlink 10.700 to 12.750 GHz and uplink 13.750 to 14.500 GHz transparent fiber optic links for antenna remoting,

Thomson-CSF THYRISTOR tk 1204

Abstract: TK1204 TK 1204 M KU 601 Thyristor 1504 Thyristor 606 tk 100 A Thomson-CSF THYRISTOR BTW50-600 GO601
Contextual Info: three phase half-controlled metal stacks ponts triphasés mixtes métalliques Vr = Types VRRM m 80 A 400 600 1000 400 600 1000 / 400 600 1000 / / / RG 604 RG 606 RG 610 6xP80 6160 110 220 380 TK 1204 TK 1206 TK 1210 KU 1004 KU 1006 KU 1010 6xP80 6160 110 220

Contextual Info: TFF11096HN Low phase noise LO generator for VSAT applications Rev. 3 — 28 March 2013 Product data sheet 1. General description The TFF11096HN is a Ku band frequency generator intended for low phase noise Local Oscillator LO circuits for Ku band VSAT transmitters and transceivers. The specified

Contextual Info: Cable Materials Company Hulic Asakusabashi Building, 22-16, Asakusabashi 1-chome, Taito-ku, Tokyo 111-0053, Japan Tel: +81-3-3863-2370 Hitachi Metals Europe GmbH Hitachi Metals Thailand Ltd. Head Office Bangkok Sales Office Immermannstrasse 14-16, 40210 Dusseldorf, Germany

NEC k 2134 transistor

Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm

NE42484C

Abstract: 2608 surface mount transistor NE42484C-T1 Ga FET marking k C band FET transistor s-parameters L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking C 1S1220 THE TRANSISTOR MANUAL (JAPANESE) 1993 nec gaas fet marking
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

WLF922

Abstract: LGA0307-4R7K LGA0410 LGB0606-2R2K LGA0307-151 LGB0606 LGA0410-331K lga0307-101k LGB0405 LGA0307
Contextual Info: TOKEN ELECTRONICS IND. CO., LTD. HONESTY PERFECTION SHARING Catalogue of Inductors And Coils Taiwan: No. 137, Sec. 1, Chung Shin Rd., Wu Ku Hsiang,Taipei Hsien,Taiwan, R.O.C TEL: 886-2-2981 0109 FAX: 886-2-2988 7487 China: 3F South, Zhongxing Industry Bld.,

NE42484C

Abstract: transistor NEC D 586 NEC Ga FET marking L NE42484C-T1 28609 low noise FET NEC U ne42484 nec gaas fet marking NEC 2533 NEC Ga FET
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

d768 transistor

Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
Contextual Info: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent

iran

Abstract: Taiwan Fairply Enterprises 8522 61 60890 Denko
Contextual Info: HEAD OFFICE MITEL SEMICONDUCTOR P.O. Box 13089 360 Legget Drive Kanata, Ont. K2K 1X3 613 592-2122 Fax: (613) 592-6909 SALES OFFICES Japan MITEL SEMICONDUCTOR Shin-Yokohama Daini Center Bldg. 10F 3-19-5 Shin-Yokohama Kohoku-ku Yokohama 222 Japan (81) 45 571 0403

DL-4146-101

Abstract: laser diode 405nm 650nm laser diode 200mw DL-4146-101S DL-6147-040 Laser diode 532nm 50mW DL-8141-002 405nm 5mW laser diode DL-3147-260 DL-4146-301
Contextual Info: LASER DIODE 2007-11 SANYO Electric Co.,Ltd Electronic Device Company Sales&Marketing Division Laser Sales Section 1-1-10 Ueno,Taito-ku,Tokyo,110-8534 JAPAN Tel:+81-3-3837-6272 Fax:+81-3-3837-6390 Tottori SANYO Electric Co.,Ltd Electronic Device Company Photonics Business Division

NE67383

Abstract: NE67300 2SK407 NEC NE67300 MESFET 8S222 NE673 NEC NE67383
Contextual Info: LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67300 NE67383 NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • VERY HIGH fMAX: 100 GHz 20 • LG = 0.3 µm, WG = 280 µm • N+ CONTACT LAYER Triple Epitaxial Technology

MGF1323

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> ! MGF1323 I SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING The MGF1323, low-noise GaAs F E T with an N-channel Schottky gate, is designed for use in S to Ku band ampli­ Umt millimeters inches 4 M IN . 1.85 ± 0.2 4 M l N.

Contextual Info: 0017072 MITSUBISHI SEMICONDUCTOR <GaAs FET> 1S7 MGF1923 TAPE CARRIER SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters linches The M G F 1 9 2 3 , low noise GaAs FET with an N-channel 4 .0 ± 0 .2 Schottky gate, is designed for use in S to Ku band ampli­

FET 913

Abstract: FLK107XV
Contextual Info: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band

Contextual Info: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band

Contextual Info: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band

Contextual Info: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: hadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band

FLK107XV

Abstract: tc 5082
Contextual Info: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 6.5dB(Typ.) High PAE: r iadd = 31% (Typ.) Proven Reliability DESCRIPTION The FLK107XV chip is a pow er G aAs FET that is designed for general purpose applications in the Ku-Band

NE67383

Contextual Info: NEC LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67300 NE67383 NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH m a x : 100 GHz LOW NOISE FIGURE 0.4 dB at 4 GHz 0.8 dB at 8 GHz 1.4 dB at 12 GHz 1.9 dB at 18 GHz

NE67383

Contextual Info: LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH fMAX: NE67300 NE67383 100 GHz LOW NOISE FIGURE 0.4 dB at 4 GHz 0.8 dB at 8 GHz 1.4 dB at 12 GHz 1.9 dB at 18 GHz 3.3 dB at 26 GHz

NEC D 809 F

Abstract: NEC D 809 L transistor NEC D 986 E7138
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm

NEC D 809 F

Abstract: NEC D 809 71383B NEC D 809 k
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. at f = 4 GHz • High associated gain Ga = 14 dB TYP. a t f = 4 G H z • Gate width: Wg = 280 fim • Gate Length: Lg = 0.3 /xm

ku 606

Abstract: RG604 1506 400-110 RG606 C1000 ku 611 KU 608 C-400
Contextual Info: 1\ three phase métal stocks ponts triphasés métalliques Type* 70 A / / / Tam b / / GD 611 676 C GF 611 676 (C) GJ 611 676 (C) H eatsink Convecteur M ech anical code Code mécanique 110 220 380 RG 604 RG 606 RG 610 6xCB80 546 400 600 1000 110 220 380 KU 1504