KU 607 Search Results

d768 transistor

Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
Contextual Info: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent

WR284* ISOLATOR

Abstract: MS3116E-10-6S WR340 flange dimensions
Contextual Info: Back to Amplifier Home Page AMF SATCOM AMPLIFIERS Introduction S-Band C-Band X-Band Ku-Band Ka-Band 40 – 60 GHz Low Noise Outline Drawings 100 Davids Drive • Hauppauge, NY 11788 • 631-436-7400 • Fax: 631-436-7430 • www.miteq.com TABLE OF CONTENTS

NE67383

Abstract: NE67300 2SK407 NEC NE67300 MESFET 8S222 NE673 NEC NE67383
Contextual Info: LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67300 NE67383 NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • VERY HIGH fMAX: 100 GHz 20 • LG = 0.3 µm, WG = 280 µm • N+ CONTACT LAYER Triple Epitaxial Technology

Contextual Info: 0017072 MITSUBISHI SEMICONDUCTOR <GaAs FET> 1S7 MGF1923 TAPE CARRIER SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters linches The M G F 1 9 2 3 , low noise GaAs FET with an N-channel 4 .0 ± 0 .2 Schottky gate, is designed for use in S to Ku band ampli­

Contextual Info: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band

Contextual Info: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band

Contextual Info: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: hadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band

Andrew ANTENNA 6,4

Contextual Info: 1.2-/1.5-/1.8-/2.4-Meter NewsFlash Ku- or K-Band Transportable SNG Antennas Antenna Features • • A M otorized Drive System fo r a Reliable, Precise, and Smooth Running System Stow Height is 24 in 2.4-m eter o r 19 in (1.2-meter) fo r More Overall Clearance fo r the Vehicle

Contextual Info: HEAD OFFICE TEL. 03-3833-5441 FAX. 03-3835-4754 16-20, UENO 6-CHOME, TAITO-KU, TOKYO, JAPAN, ZIP CODE 110-0005 TEL. 1 760-510-3200 FAX.(1 )760-471 -4046 1770 LA COSTA MEADOWS DRIVE SAN MARCOS, CALIFORNIA 92069 U.S.A. CHICAGO OFFICE TEL.(1 )847-925-0888 FAX.(1)847-925-0899

NE32584C-T1

Abstract: nec 3435 transistor am 4428
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.

yx 861

Abstract: yx 801 BUH 508 VAUC GT 1083 NE76084-T1 NE76083A NE76084S L to Ku Band Low Noise GaAs MESFET x band GaAs MESFET 261
Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET NE76084S NOISE FIGURE ANO ASSOCIATED GAIN vs FREQUENCY Vos = 3 V, Id s • 10 mA FEATURES LOW NOISE FIGURE NF * 1,6 d8 TYP a! f = 12 GHz HIGH ASSOCIATED GAIN G a = 9 0 0 TYP at f • 12 GHz LG • 0.3 ¿im. W g = 280 S LOW COST METAL/CERAMIC PACKAGE

smd JSs

Abstract: smd JSs diode
Contextual Info: SK50GB065 B- I JK L$M 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT N$OG BP I JK L$ C$ BP I TJK L$ C$XY IGBT Module SK50GB065 *'-) RSS N KU V B- I WS L$ US V RS V Z JS N BP I TJK L$ TS _- B- I JK L$ RU V B- I WS L$ UW V C$XYI J : C$0%&

Contextual Info: SK50GARL065 B- I JK L$M 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT N$OG BP I JK L$ C$ BP I TJK L$ C$XY IGBT Module SK50GARL065 *'-) RSS N KU V B- I WS L$ US V TJS V Z JS N BP I TJK L$ TS _- B- I JK L$ JK V B- I WS L$ Ta V C$XYI J : C$0%&

DIODE B82

Contextual Info: SK50GAL065 B- I JK L$M 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT N$OG BP I JK L$ C$ BP I TJK L$ C$XY RSS N KU V B- I WS L$ US V RS V Z JS N BP I TJK L$ TS _- B- I JK L$ Ka V B- I WS L$ [W V TSS V BP I TKS L$ UUS V B- I JK L$

platinum temp sensor

Contextual Info: PTL Series - Pt-Sensors Vishay Beyschlag Leaded Platinum Temperature Sensor FEATURES • Advanced platinum thin film technology  Standardized according IEC 60751  Outstanding stability of temperature characteristics  Short reaction times down to t0.9  8 s

Contextual Info: PTL Series - Pt-Sensors Vishay Beyschlag Leaded Platinum Temperature Sensor FEATURES • Advanced platinum thin film technology  Standardized according IEC 60751  Outstanding stability of temperature characteristics  Short reaction times down to t0.9  8 s

TESLA KU 602

Abstract: TESLA KU 601 tesla ku 611 kd 501 KD 3055 vergleichsliste DDR kd 616 tungsram UNITRA vergleichsliste
Contextual Info: r electronic Vergleichsliste Silizium-Leistungstransistoren 1 Vorwort» Die Verglcich8jiatc Silizium - Leistungstransistoren wurde in erste: Linie als Arbeitsmaterial fuer die Applikationsorgane unseres Kombinates zusanmengestellt. Um das Hauptziel dic.aer Liste - NSW - Bauelemente

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

wd 969

Contextual Info: SKiiP 23NAB126V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper K;CR .; .;1X K/CR & P GF Q;N 4+8*&& 2'-* 79&* &@*,969*5 (& P GF UMSV Q; (Z Diode - Inverter, Chopper MiniSKiiP 2 (& P GF UMSV Q; .$ .$1X (Z

Contextual Info: SKiiP 35NAB126V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper K;CR .; .;1X K/CR & P GF Q;O 4+8*&& 2'-* 79&* &@*,969*5 (& P GF UVSW Q; (Z Diode - Inverter, Chopper MiniSKiiP 3 (& P GF UVSW Q; .$ .$1X (Z

radiotechnique

Abstract: tube cathodique ec157 K3343
Contextual Info: TRIODE PHARE EC 157 POUR AM PLIFIC A TEU R A LARGE BANDE 4 000 MHz C A R A C TÉ R IS TIQ U E S (*) Chauffage : Indirect (cathode isolée du filament)! = 6,3 ^ (1) ( If = 0,735 A A lim e n ta tio n en parallèle, c on tinu ou alte rnatif. C O N D IT IO N S

Contextual Info: 5.8S-26.5 GHz MINIATURE WAVEGUIDE TO COAXIAL ADAPTERS SMA, 3.5mm, 2.9mm Types • Low VSWR • Low Insertion Loss • Lightweight • Precision Coaxial Connectors Either SMA, 3.5mm or 2.9mm SPECIFICATIONS i i FREQUENCY RANGE GHz M ODEL BAND W AVEGUIDE SIZE

transistor BU 5027

Abstract: transistor KT 816 transistor SD 5024 J 5027-R bu 5027 KT 817 transistor KT315 Transistor KU 607 MDA 2020 RFT e 355 d
Contextual Info: SERVICE-MITTEILUNGEN VEB IN D U ST RIEV ERT RIEB R U N D FU N K UND FE R N SE H EN NOV/DEZ B l Iradi o -teievlsion I 1 9 IO 8 0 SEITE 1-8 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S Änderung am Kassettenrecorder ELKKTRONTKA - 302 Der Sowjet. Hersteller hat im

Contextual Info: • 0DDfi07M biß ■RHI1 LA-221 Series ' f X — K / L ig h t Emitting Diodes LA-221 ro w * « ? # ? * * » Series High-Efficiency Numeric Displays 1 0 /D im e n s io n s Unit : mm LA-221 v ' J - X i i , 1 2 ± 0 .3 ¿0.6 L T H 3 S L tc , 57mm Series LA-221 are high-efficiency nu­