KTK5 Search Results

KTK5133S

Contextual Info: SEMICONDUCTOR KTK5133S TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES 2.5 Gate Drive. Low Threshold Voltage : Vth=0.5 High Speed. Small Package. Enhancement-Mode. E B L L D 1.5V.

K596

Abstract: KTK596 b3 marking on a diode diode marking b2 Marking B2 marking 2004 B Y device marking
Contextual Info: SEMICONDUCTOR KTK596 MARKING SPECIFICATION TO-92M PACKAGE 1. Marking method Laser Marking or Ink Marking. 2. Marking K596 1 B 2 No. 2007. 1. 9 401 3 Item Marking Description Device Name K596 KTK596 IDSS Rank B B B1, B2, B3 , C, Y, GR Lot No. 401 2004. 1st Week

marking KD SOT23

Abstract: KTK5134S
Contextual Info: SEMICONDUCTOR KTK5134S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 KD 1 2 Item Marking Description Device Mark KD KTK5134S * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KTK5132V

Contextual Info: SEMICONDUCTOR KTK5132V MARKING SPECIFICATION VSM PACKAGE 1. Marking method Laser Marking 2. Marking KB No. 2004. 2. 11 Item Marking Description Device Mark KB KTK5132V Revision No : 0 1/1

KTK5132V

Abstract: CISS 3010 ktk5132
Contextual Info: KTK5132V SEMICONDUCTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS E FEATURES 2.5 Gate Drive. Low Threshold Voltage : Vth=0.5 High Speed. Small Package. Enhancement-Mode. B 1.5V. D

KTK5162S

Contextual Info: SEMICONDUCTOR KTK5162S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 KF 1 2 Item Marking Description Device Mark KF KTK5162S * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: S EM IC O N D U C T O R KTK596 TECHNI CAL DATA N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR CONDENSER MICROPHONE APPLICATION. FEATURES • Especially Suited for Use in Audio, Telephone. • Capacitor Microphones. E3T • Excellent Voltage Characteristics. • Excellent Transient Characteristics.

ktk596

Abstract: KTK596S 0107ma
Contextual Info: SEMICONDUCTOR KTK596S TECHNICAL DATA N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR CONDENSER MICROPHONE APPLICATION. FEATURES Expecially Suited for Use in Audio, Telephone. E B L L Capacitor Microphones. 2 A H 1 P UNIT VGDO -20 V Gate Current IG 10 mA Drain Current

Contextual Info: SEMICONDUCTOR KTK598TV TECHNICAL DATA N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR CONDENSER MICROPHONE APPLICATION. FEATURES 2009. 9. 28 Revision No : 4 1/4

Contextual Info: SEMICONDUCTOR KTK5132E TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES 2002. 6. 17 Revision No : 0 1/3

Contextual Info: SEMICONDUCTOR KTK5133S TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES 2001. 10. 29 Revision No : 0 1/3

Contextual Info: SEMICONDUCTOR KTK5131V TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES 2003. 7. 4 Revision No : 0 1/3

Contextual Info: SEMICONDUCTOR KTK5132V TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS E FEATURES 2.5 Gate Drive. Low Threshold Voltage : Vth=0.5 High Speed. Small Package. Enhancement-Mode. B 1.5V. D

KTK596

Abstract: DSS700
Contextual Info: KTK596 SEMICONDUCTOR N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR TECHNICAL DATA CONDENSER MICROPHONE APPLICATION. FEATURES B ᴌExpecially Suited for Use in Audio, Telephone. A ᴌCapacitor Microphones. O F ᴌExcellent Voltage Characteristics. ᴌExcellent Transient Characteristics.

KTK597V

Contextual Info: SEMICONDUCTOR KTK597V TECHNICAL DATA N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR CONDENSER MICROPHONE APPLICATION. FEATURES E Expecially Suited for Use in Audio, Telephone. B Capacitor Microphones. Excellent Voltage Characteristics. G H A D 2 Excellent Transient Characteristics.

ktk5132u

Abstract: ktk5132
Contextual Info: SEMICONDUCTOR KTK5132U MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 1 KB D 0 2. Marking 2 No. Item Marking Description ① Device Mark KB KTK5132U ② Lot No.* D0 2008. 40st Week [0:1st Character, A:2nd Character] Note * Lot No. marking method

KTK5131E

Contextual Info: KTK5131E SEMICONDUCTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS E FEATURES ・2.5 Gate Drive. ・Low Threshold Voltage : Vth=0.5～1.5V. ・High Speed. ・Small Package. ・Enhancement-Mode.

KTK597E

Contextual Info: SEMICONDUCTOR KTK597E TECHNICAL DATA N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR CONDENSER MICROPHONE APPLICATION. FEATURES E Expecially Suited for Use in Audio, Telephone. B Capacitor Microphones. Excellent Voltage Characteristics. D G A 2 C H Excellent Transient Characteristics.

Contextual Info: SEMICONDUCTOR KTK5134S TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES 2001. 10. 29 Revision No : 0 1/3

Contextual Info: SEMICONDUCTOR KTK5132S TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES 2002. 6. 21 Revision No : 1 1/3

Contextual Info: SEMICONDUCTOR KTK5131S TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES ・2.5 Gate Drive. ・Low Threshold Voltage : Vth=0.5～1.5V. ・High Speed. ・Small Package. ・Enhancement-Mode.

KTK5121S

Contextual Info: SEMICONDUCTOR KTK5121S N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES • • • • • 2.5 Gate Drive. Low Threshold Voltage : Vth=0.5~1.5V. High Speed. Small Package. Enhancement-Mode.

KTK5122S

Contextual Info: SEMICONDUCTOR KTK5122S TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES • High Input Impedance. • Low Gate Threshold Voltage : V th=0.5~1.5V. • Excellent Switching Times : ton=0.16//S Typ.

KTK5131V

Contextual Info: KTK5131V SEMICONDUCTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS E B 1.5V. G D 2 1 3 K H A FEATURES 2.5 Gate Drive. Low Threshold Voltage : Vth=0.5 High Speed. Small Package. Enhancement-Mode.