KTC4072E Search Results
KTC4072E Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| KTC4072E | Korea Electronics | General Purpose Transistor | Original | 72.8KB | 3 | ||
| KTC4072E | Korea Electronics | General Purpose Transistor | Original | 72.86KB | 3 |
KTC4072E Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: SEMICONDUCTOR KTC4072E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. FEATURES E ᴌHigh Current. B ᴌLow VCE sat . : VCE(sat)ᴪ250mV at IC=200mA/IB=10mA. D G A 2 C H ᴌComplementary to KTA2012E. DIM A B 3 1 D E G H MILLIMETERS _ 0.10 |
Original |
ktc4072e250mv200ma/ibkta2012e | |
KTC4072EContextual Info: SEMICONDUCTOR KTC4072E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking LZ No. Item Marking 1 Device Mark LZ KTC4072E 2 hFE Grade - - 02.01.04 Revision No : 00 Description 1/1 |
Original |
ktc4072e | |
KTA2012E
Abstract: KTC4072E
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Original |
kta2012e-250mv-200ma/ib-10ma+1 | |
KTA2012E
Abstract: KTC4072E
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Original |
ktc4072e250mv200ma/ibkta2012e | |
KTA2012E
Abstract: KTC4072E
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Original |
kta2012e-250mv-200ma/ib-10ma+1 | |
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Contextual Info: SEMICONDUCTOR KTA2012E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. FEATURES E ᴌA Collector Current is Large. B ᴌCollector Saturation Voltage is low. : VCE sat ᴪ-250mV at IC=-200mA/IB=-10mA. D G A 2 C H ᴌComplementary to KTC4072E. |
Original |
kta2012e-250mv-200ma/ib-10ma+1 | |
KTC4072E
Abstract: KTA2012E
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Original |
ktc4072e250mv200ma/ibkta2012e | |
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Contextual Info: SEMICONDUCTOR KTA2012E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. FEATURES ・A Collector Current is Large. ・Collector Saturation Voltage is low. : VCE sat ≤-250mV at IC=-200mA/IB=-10mA. ・Complementary to KTC4072E. MAXIMUM RATING (Ta=25℃) |
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kta2012e-250mv-200ma/ib-10ma+3 | |
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Contextual Info: SEMICONDUCTOR KTC4072E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. FEATURES ・High Current. ・Low VCE sat . : VCE(sat)≤250mV at IC=200mA/IB=10mA. ・Complementary to KTA2012E. MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING |
Original |
ktc4072e250mv200ma/ibkta2012e+2 | |
alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
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hig86-755-3679515alternator diode 1776 b2az marking transistor sot-23smd sot23 transistor mark y2+7 | |
khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
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2n2904ebc859kds135s2n2906e+16 | |
KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
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2n2904ebc859kds135s2n2906e+16 | |
MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
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mn1280kgt50n60kdabc547 smd transistorkia1117af+6 | |
oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
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kia7900pitc7sh04fukic7sh04fusc604+16 | |
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KF6N60
Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
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usfb053usfb13usfb13ausfb13l+16 | |