KTA702E Search Results
KTA702E Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| KTA702E | Korea Electronics | General Purpose Transistor | Original | 73.56KB | 3 |
KTA702E Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
KTA702E
Abstract: KTC802E
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Original |
ktc802e250mv200ma/ibkta702e+2 | |
KTA702E
Abstract: KTC802E
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Original |
ktc802e250mv200ma/ibkta702e | |
KTC802EContextual Info: SEMICONDUCTOR KTC802E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・High Current. ・Low VCE sat . : VCE(sat)≤250mV at IC=200mA/IB=10mA. ・Complementary to KTA702E. MAXIMUM RATINGS (Ta=25℃) |
Original |
ktc802e250mv200ma/ibkta702e+2 | |
KTA702EContextual Info: SEMICONDUCTOR KTA702E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking SZ 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark SZ KTA702E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index. |
Original |
kta702e | |
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Contextual Info: SEMICONDUCTOR KTC802E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES 250mV at IC=200mA/IB=10mA. C A : VCE sat 1 6 2 5 3 4 D Complementary to KTA702E. P ) SYMBOL RATING UNIT Collector-Base Voltage |
Original |
ktc802e250mv200ma/ibkta702e+2 | |
KTA702E
Abstract: KTC802E
|
Original |
kta702e-250mv-200ma/ib-10ma+1 | |
KTA702E
Abstract: KTC802E
|
Original |
kta702e-250mv-200ma/ib-10ma+1 | |
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Contextual Info: SEMICONDUCTOR KTA702E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES -250mV at IC=-200mA/IB=-10mA. C A : VCE sat 1 6 2 5 3 4 D Complementary to KTC802E. P ) SYMBOL RATING UNIT Collector-Base Voltage |
Original |
kta702e-250mv-200ma/ib-10ma+1 | |
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Contextual Info: SEMICONDUCTOR KTA702E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A : VCE sat ≤-250mV at IC=-200mA/IB=-10mA. 1 6 2 5 3 4 D ・Complementary to KTC802E. P P MILLIMETERS _ 0.05 1.6 + _ 0.05 |
Original |
kta702ektc802e-250mv | |
alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
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Original |
hig86-755-3679515alternator diode 1776 b2az marking transistor sot-23smd sot23 transistor mark y2+7 | |
khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
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Original |
2n2904ebc859kds135s2n2906e+16 | |
LM8550
Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
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Original |
2n2222/aktn2222/a2sa1150kta1272+16 | |
KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
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Original |
2n2904ebc859kds135s2n2906e+16 | |
MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
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Original |
mn1280kgt50n60kdabc547 smd transistorkia1117af+6 | |
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KF6N60
Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
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Original |
usfb053usfb13usfb13ausfb13l+16 | |