KTA1666 Search Results

Contextual Info: Product specification KTC4379 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A ● Complementary to KTA1666 0.53±0.1 0.80±0.1 3 0.44±0.1 0.40±0.1 0.48±0.1

MARKING WY SOT-89

Abstract: WY sot-89 KTA1666 transistor marking WY PLANAR TRANSISTOR WY Marking WO
Contextual Info: KTA1666 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5

WY transistor

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors KTA1666 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current -2 A ICM: Collector-base voltage

KTA1666

Abstract: KTC4379 SOT89 UY marking UY
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors KTC4379 SOT-89 TRANSISTOR NPN 1. BASE FEATURES z Low saturation voltage z High speed switching time z Complementary to KTA1666 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

WY smd transistor

Abstract: smd transistor marking wy
Contextual Info: Transistors IC SMD Type Epitaxial Planar PNP Transistor KTA1666 SOT-89 • Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 ● Collector Power dissipation: PC=500mW +0.1 2.50-0.1 ● Collector Current -Continuous: IC=-2A 3 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 -0.1

SMD transistor UY

Contextual Info: Transistors SMD Type Epitaxial Planar NPN Transistor KTC4379 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A ● Complementary to KTA1666 0.53±0.1 0.80±0.1

Contextual Info: SEMICONDUCTOR KTA1666 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. A FEATURES C H ᴌLow Saturation Voltage G J B E : VCE sat =-0.5V(Max.) (IC=-1A) ᴌHigh Speed Switching Time : tstg=1.0Ọ S(Typ.)

marking Kf SOT-89

Abstract: c71d KTA1666 KTC4379
Contextual Info: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1666 EPITAXIAL PLANAR PNP TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. FEATURES • Low Saturation Voltage : VCE Sat =-0.5V (Max.) (IC=-1A) • High Speed Switching Time : tstg=1.0^S(Typ.)

MARKING WY SOT-89

Abstract: WY transistor WY sot-89 transistor marking WY KTA1666 marking wy
Contextual Info: KTA1666 KTA1666 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current ICM: -2 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTA1666 TRANSISTOR PNP 1. BASE FEATURES z Complementary to KTC4379 z Small Flat Package z Low Saturation Voltage z Power Amplifier and Switching Application

WY smd transistor

Abstract: SMD TRANSISTOR MARKING wy
Contextual Info: Diodes IC Transistors Transistor T SMD Type Product specification KTA1666 SOT-89 • Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 ● Collector Power dissipation: PC=500mW +0.1 2.50-0.1 ● Collector Current -Continuous: IC=-2A 3 +0.1 0.53-0.1 +0.1 0.44-0.1

Contextual Info: KTA1666 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors KTC4379 SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES z Low saturation voltage z High speed switching time z Complementary to KTA1666 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

sot-89, amplifier, H1

Abstract: H1 SOT-89 amplifier A1666 KTA1666 KTC4379
Contextual Info: K E C SEMICONDUCTOR KTA1666 TECHNICAL DATA e p it a x ia l p l a n a r p n p ti POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. FEATURES • Low Saturation Voltage : VcE sat =- 0.5V(Max.) (Ic=-1A) • High Speed Switching Time : tstg=1.0//S(Typ.)

SOT89 UY

Abstract: MARKING UY marking 01, sot-89 1a SOT89
Contextual Info: KTC4379 SOT-89 Transistor NPN 1. BASE SOT-89 2. COLLECTOR 1 2 3. EMITTER 4.6 4.4 1.8 1.4 1.6 1.4 3 B Features — — — 2.6 4.25 2.4 3.75 Low saturation voltage High speed switching time Complementary to KTA1666 0.8 MIN 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

KTA1666

Abstract: KTC4379
Contextual Info: SEMICONDUCTOR KTA1666 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. A FEATURES C H ᴌLow Saturation Voltage G J B E : VCE sat =-0.5V(Max.) (IC=-1A) ᴌHigh Speed Switching Time : tstg=1.0ỌS(Typ.)

Contextual Info: TPS65166 www.ti.com. SLVS976 – SEPTEMBER 2009 Compact LCD Bias Supply for TFT-LCD TV Panels

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

Transistor S8550 2TY

Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250

khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

Contextual Info: TPS65166 www.ti.com. SLVS976 – SEPTEMBER 2009 Compact LCD Bias Supply for TFT-LCD TV Panels

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo

Y2 transistor

Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Contextual Info: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123

KIA78*pI

Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC