KST210 Search Results

PC 13001 TRANSISTOR

Abstract: IC PC 124 STD123S STA124S
Contextual Info: STA124S Semiconductor PNP Silicon Transistor Features • Suitable for low voltage large current drivers • High DC current gain and large current capability • Complementary pair with STD123S Ordering Information Type NO. Marking STA124S Package Code 124

Contextual Info: DP030S Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.15V Typ. @IC/IB=-100mA/-10mA) • Suitable for low voltage large current drivers • Complementary pair with DN030S • Switching Application

STK7002A

Contextual Info: STK7002A Semiconductor N-Channel Enhancement-Mode MOSFET Description • High speed switching application. Features • High density cell design for low RDS ON . • Voltage controlled small signal switch • High saturation current capability. Ordering Information

N01 marking

Abstract: T 2109 DN030S DP030S
Contextual Info: DN030S Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.1V Typ. @IC /IB =100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030S • Switching Application

STC918SF

Abstract: kst tuner kst21
Contextual Info: STC918SF Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=9.0 GHz Typ. @VCE=6V, IC=15mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA

Contextual Info: STC918SF Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=9.0 GHz Typ. @VCE=6V, IC=15mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA

Contextual Info: DP030S Semiconductor PNP Silicon Transistor Features • Ext rem ely low collect or- t o- em it t er sat urat ion volt age VCE( SAT = - 0.15V Typ. @IC / I B = - 100m A/ - 10m A) • Suit able for low volt age large current drivers • Com plem ent ary pair wit h DN030S

SOT-23 k702

Abstract: k702 2105 STK7002 k702 mosfet
Contextual Info: STK7002 Semiconductor N-Channel Enhancement-Mode MOSFET Description • High speed switching application. Features • High density cell design for low RDS ON . • Voltage controlled small signal switch • High saturation current capability. Ordering Information

DN030S

Abstract: DP030S kst21 kst210
Contextual Info: DP030S Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.15V Typ. @IC /IB =-100mA/-10mA) • Suitable for low voltage large current drivers • Complementary pair with DN030S • Switching Application

DN030S

Abstract: DP030S
Contextual Info: DP030S Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.15V Typ. @IC/IB=-100mA/-10mA) • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with DN030S

k702

Abstract: SOT-23 k702 2105 k702 mosfet marking 2105 STK7002 kst21 marking K702
Contextual Info: STK7002 Semiconductor N-Channel Enhancement-Mode MOSFET Description • High speed switching application. Features • High density cell design for low RDS ON . • Voltage controlled small signal switch • High saturation current capability. Ordering Information

Contextual Info: STK7002 Semiconductor N-Channel Enhancement-Mode MOSFET Description • High speed switching application. Features • High density cell design for low RDS on . • Voltage controlled small signal switch • High saturation current capability. Ordering Information