KSMD10N20C Search Results
KSMD10N20C Datasheets Context Search
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Contextual Info: KSMD10N20C / KSMU10N20C N-Channel MOSFET 200 V, 7.8 A, 360 mΩ TO-251 TO-252 Features • 7.8 A, 200 V, RDS on = 360 mΩ (Max.)@ VGS = 10 V, ID = 3.9 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ. 40.5 pF) • 100% Avalanche Tested Description This N-Channel enhancement mode power MOSFET is |
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KSMD10N20C KSMU10N20C O-251 O-252 | |
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Contextual Info: KSMD10N20C / KS,MU10N20C 200V N-Channel MOSFET TO-252 TO-251 Features • • • • • • 7.8A, 200V, RDS on = 0.36Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 40.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability |
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KSMD10N20C MU10N20C O-252 O-251 30TYP |