KRX10 Search Results

M Krx102u

Abstract: KRX102U
Contextual Info: SEMICONDUCTOR KRX102U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking BM 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BM KRX102U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs

KRX105U

Contextual Info: SEMICONDUCTOR KRX105U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking 2. Marking 3 No. 0 1 BE 1 2 Item Marking Description Device Mark BE KRX105U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs

Contextual Info: SEM ICONDUCTOR KRX105U TE CHNICAL DATA EPIT A X IA L PLANAR NPN/PNP T R A N SIST O R SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A N D DRIVER CIRC U IT A PPLICATION. FEA T U RE S • Including tw o devices in U SV . U ltra Super m ini type w ith 5 leads.

1007U

Contextual Info: SEM ICONDUCTOR KRX104U TE CHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A N D DRIVER CIRC U IT A PPLICATION. FEA T U RE S • Including tw o devices in U SV . U ltra Super m ini type w ith 5 leads. M IL L IM E T E R S

Contextual Info: SEMICONDUCTOR KRX101E TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A With Built-in bias resistors. 1 2 Reduce a quantity of parts and manufacturing process. 3 R1

KRX103E

Contextual Info: SEMICONDUCTOR KRX103E TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A ᴌWith Built-in bias resistors. 1 2 DIM A 5 A1 Thin Extreme Super mini type with 5 pin. C

KRX104E

Contextual Info: SEMICONDUCTOR KRX104E TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A ᴌWith Built-in bias resistors. 1 2 DIM A 5 A1 Thin Extreme Super mini type with 5 pin. C

KRX101U

Abstract: 54bA
Contextual Info: SEMICONDUCTOR KRX101U TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ᴌIncluding two devices in USV. 5 1 A 2 C ᴌWith Built-in bias resistors. A1 C Ultra Super mini type with 5 leads.

Contextual Info: SEMICONDUCTOR KRX105E TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A ・With Built-in bias resistors. 1 2 ・Reduce a quantity of parts and manufacturing process.

KRX104U

Contextual Info: SEMICONDUCTOR KRX104U TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ・Including two devices in USV. 1 5 DIM A A1 B A 2 C ・With Built-in bias resistors. A1 C Ultra Super mini type with 5 leads.

KRX102E

Contextual Info: SEMICONDUCTOR KRX102E TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A With Built-in bias resistors. 1 2 DIM A 5 A1 Thin Extreme Super mini type with 5 pin. C Including two devices in TESV.

KRX104E

Contextual Info: SEMICONDUCTOR KRX104E TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A With Built-in bias resistors. 1 2 DIM A 5 A1 Thin Extreme Super mini type with 5 pin. C Including two devices in TESV.

KRX103U

Contextual Info: SEMICONDUCTOR KRX103U TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ・Including two devices in USV. 1 5 DIM A A1 B A 2 C ・With Built-in bias resistors. A1 C Ultra Super mini type with 5 leads.

npn-pnp-transistors

Abstract: KRX105U
Contextual Info: SEMICONDUCTOR KRX105U TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ・Including two devices in USV. 1 5 A 2 C ・With Built-in bias resistors. A1 C Ultra Super mini type with 5 leads.

KRX103U

Contextual Info: SEMICONDUCTOR KRX103U TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ᴌIncluding two devices in USV. 5 1 A 2 C ᴌWith Built-in bias resistors. A1 C Ultra Super mini type with 5 leads.

marking A1 TRANSISTOR

Abstract: KRX105E
Contextual Info: SEMICONDUCTOR KRX105E TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A With Built-in bias resistors. 1 2 DIM A 5 A1 Thin Extreme Super mini type with 5 pin. C Including two devices in TESV.

ba 2nd years

Abstract: transistor mark BA KRX101E marking BA
Contextual Info: SEMICONDUCTOR KRX101E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX101E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRX103E

Contextual Info: SEMICONDUCTOR KRX103E TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A With Built-in bias resistors. 1 2 DIM A 5 A1 Thin Extreme Super mini type with 5 pin. C Including two devices in TESV.

KRX103E

Contextual Info: SEMICONDUCTOR KRX103E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking BB 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BB KRX103E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

m krx102e

Abstract: MARKING BM KRX102E
Contextual Info: SEMICONDUCTOR KRX102E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking BM 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BM KRX102E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

m krx102f

Abstract: marking BM KRX102F
Contextual Info: SEMICONDUCTOR KRX102F MARKING SPECIFICATION TFSV PACKAGE 1. Marking method Laser Marking 2. Marking BM No. 2006. 10. 19 Item Marking Description Device Mark BM KRX102F hFE Grade - - Revision No : 0 1/1

Contextual Info: SEMICONDUCTOR KRX105U TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ・Including two devices in USV. 1 5 DIM A A1 B A 2 C ・With Built-in bias resistors. A1 C Ultra Super mini type with 5 leads.

KRX105E

Contextual Info: SEMICONDUCTOR KRX105E TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A ᴌWith Built-in bias resistors. 1 2 DIM A 5 A1 Thin Extreme Super mini type with 5 pin. C

KRX102E

Contextual Info: SEMICONDUCTOR KRX102E TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A ᴌWith Built-in bias resistors. 1 2 DIM A 5 A1 Thin Extreme Super mini type with 5 pin. C