KRC85 Search Results

marking ND

Abstract: KRC854U
Contextual Info: SEMICONDUCTOR KRC854U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking ND 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark ND KRC854U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

marking ND

Abstract: KRC854E
Contextual Info: SEMICONDUCTOR KRC854E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking ND 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark ND KRC854E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRC858U

Contextual Info: SEMICONDUCTOR KRC858U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking 2. Marking 3 No. 0 1 NI 1 2 Item Marking Description Device Mark NI KRC858U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRC853E

Contextual Info: SEMICONDUCTOR KRC853E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking NC 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark NC KRC853E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRC851E

Contextual Info: SEMICONDUCTOR KRC851E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking NA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark NA KRC851E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

Contextual Info: SEM ICONDUCTOR KRC851F-KRC854F TECHNI CAL DATA EPI TAXI AL PLANAR NPN TRA NS IST OR SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A N D DRIVER CIRC U IT A PPLICATION. FEA T U RE S • With Built-in Bias Resistors. • Simplify Circuit Design. DIM • Reduce a Quantity o f Parts and Manufacturing Process.

Contextual Info: SEMICONDUCTOR KRC857F~KRC859F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES 1 6 2 5 A ・Simplify Circuit Design. A1 C ・With Built-in Bias Resistors. C ・Reduce a Quantity of Parts and Manufacturing Process.

KRC857U

Abstract: KRC858U KRC859U
Contextual Info: SEMICONDUCTOR KRC857U~KRC859U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ᴌWith Built-in Bias Resistors. 1 6 2 5 3 4 DIM A A1 B A A1 C ᴌSimplify Circuit Design. C

Contextual Info: SEMICONDUCTOR KRC857E~KRC859E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A ・Reduce a Quantity of Parts and Manufacturing Process. 1 6 2 5 3 4 A1 ・Simplify Circuit Design.

KRC857E

Abstract: KRC858E KRC859E
Contextual Info: SEMICONDUCTOR KRC857E~KRC859E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 C A ᴌSimplify Circuit Design. 1 6 2 5 3 4 A1 ᴌWith Built-in Bias Resistors. C FEATURES ᴌReduce a Quantity of Parts and Manufacturing Process.

KRC852F

Abstract: KRC853F KRC854F KRC851F TFS6
Contextual Info: SEMICONDUCTOR KRC851F~KRC854F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES 1 6 2 5 A Simplify Circuit Design. A1 C With Built-in Bias Resistors. D C Reduce a Quantity of Parts and Manufacturing Process.

KRC859E

Contextual Info: SEMICONDUCTOR KRC859E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking NJ 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark NJ KRC859E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

859f

Contextual Info: S EM IC O N D U C T O R KRC857F-KRC859F TECHNI CAL DATA E PIT A X IA L PLA N A R NPN T R A N SIST O R SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A N D DRIVER CIRC U IT A PPLICATION. FEA T U RE S • With Built-in Bias Resistors. • Simplify Circuit Design.

KRC851U

Abstract: KRC852U KRC853U KRC854U KRC855U KRC856U
Contextual Info: SEMICONDUCTOR KRC851U~KRC856U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ᴌWith Built-in Bias Resistors. 1 6 2 5 3 4 DIM A A1 B A C ᴌReduce a Quantity of Parts and Manufacturing Process.

Contextual Info: SEMICONDUCTOR KRC851F~KRC854F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES 2008. 11. 20 Revision No : 2 1/5

Contextual Info: SEMICONDUCTOR KRC857U~KRC859U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 1 6 2 5 3 4 DIM A A1 B A A1 C Simplify Circuit Design. C Reduce a Quantity of Parts and Manufacturing Process.

Contextual Info: SEM ICONDUCTOR KRC851E~KRC856E TECHNI CAL DATA EPI TAXI AL PLANAR NPN TRA NS IST OR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. DIM • Simplify Circuit Design. M ILLIM ETER S A 1.6±0.05

Contextual Info: SEM IC O N D U C TO R KRC857U-KRC859U TECHNI CAL DATA EPI TAXI AL PLANAR NPN TRA NS IST OR SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A ND DRIVER CIRC U IT A PPLICATION. FEA T U RE S • With Built-in Bias Resistors. Q D6 DIM MILLIMETERS A 2.00±0.20

KRC856E

Abstract: marking NF
Contextual Info: SEMICONDUCTOR KRC856E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking NF 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark NF KRC856E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRC853U

Contextual Info: SEMICONDUCTOR KRC853U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking NC 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark NC KRC853U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRC857U

Contextual Info: SEMICONDUCTOR KRC857U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking NH 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark NH KRC857U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

Contextual Info: SEMICONDUCTOR KRC857U~KRC859U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ・With Built-in Bias Resistors. 1 6 2 5 3 4 DIM A A1 B A A1 C ・Simplify Circuit Design. C

KRC853E

Contextual Info: SEMICONDUCTOR KRC851E~KRC856E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A ・Reduce a Quantity of Parts and Manufacturing Process. 1 6 2 5 3 4 A1 ・Simplify Circuit Design.

Contextual Info: SEMICONDUCTOR KRC857E~KRC859E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 C A Simplify Circuit Design. 1 6 2 5 3 4 A1 With Built-in Bias Resistors. C FEATURES D Reduce a Quantity of Parts and Manufacturing Process.