KRC65 Search Results

KRC655E

Abstract: marking NE
Contextual Info: SEMICONDUCTOR KRC655E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking NE 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark NE KRC655E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

marking ND

Abstract: KRC654U MARK ND ND marking
Contextual Info: SEMICONDUCTOR KRC654U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking ND 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark ND KRC654U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs

KRC657E

Abstract: KRC658E KRC659E
Contextual Info: SEMICONDUCTOR KRC657E~KRC659E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A Reduce a Quantity of Parts and Manufacturing Process. 1 2 DIM A 5 A1 Simplify Circuit Design.

marking NB

Abstract: KRC652U
Contextual Info: SEMICONDUCTOR KRC652U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking NB 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark NB KRC652U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs

KRC654U

Abstract: KRC651U KRC652U KRC653U KRC655U KRC656U
Contextual Info: SEMICONDUCTOR KRC651U~KRC656U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ・With Built-in Bias Resistors. 1 5 DIM A A1 B A 2 C ・Reduce a Quantity of Parts and Manufacturing Process.

KRC656U

Contextual Info: SEMICONDUCTOR KRC656U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking 2. Marking 3 No. 0 1 NF 1 2 Item Marking Description Device Mark NF KRC656U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs

KRC657E

Contextual Info: SEMICONDUCTOR KRC657E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking NH 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark NH KRC657E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRC656E

Contextual Info: SEMICONDUCTOR KRC656E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking NF 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark NF KRC656E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

NC MARKING

Abstract: KRC653E
Contextual Info: SEMICONDUCTOR KRC653E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking NC 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark NC KRC653E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

Contextual Info: SEMICONDUCTOR KRC651F~KRC654F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES 2008. 11. 20 Revision No : 2 1/5

Contextual Info: SEMICONDUCTOR KRC657U~KRC659U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 1 5 A 2 C Reduce a Quantity of Parts and Manufacturing Process.

Contextual Info: SEMICONDUCTOR KRC651U~KRC656U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ・With Built-in Bias Resistors. 1 5 DIM A A1 B A 2 C ・Reduce a Quantity of Parts and Manufacturing Process.

Contextual Info: SEM ICONDUCTOR KRC651F-KRC654F TECHNI CAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A N D DRIVER CIRC U IT A PPLICATION. FEA T U RE S • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity o f Parts and Manufacturing Process.

KRC651U

Contextual Info: SEMICONDUCTOR KRC651U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking NA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark NA KRC651U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs

656E

Abstract: KRC651E KRC652E KRC653E KRC654E KRC655E KRC656E 654E
Contextual Info: SEMICONDUCTOR KRC651E~KRC656E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A Reduce a Quantity of Parts and Manufacturing Process. 1 2 DIM A 5 A1 Simplify Circuit Design.

KRC658U

Contextual Info: SEMICONDUCTOR KRC658U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking 2. Marking 3 No. 0 1 NI 1 2 Item Marking Description Device Mark NI KRC658U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs

KRC559U

Abstract: KRC657U KRC658U KRC659U KRC5
Contextual Info: SEMICONDUCTOR KRC657U~KRC659U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ᴌWith Built-in Bias Resistors. 5 1 A A1 C ᴌSimplify Circuit Design. C ᴌReduce a Quantity of Parts and Manufacturing Process.

Contextual Info: SEMICONDUCTOR KRC657U~KRC659U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 5 DIM A A1 B 2 C A A1 C 1 Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.

KRC651U

Abstract: KRC652U KRC653U KRC654U KRC655U KRC656U
Contextual Info: SEMICONDUCTOR KRC651U~KRC656U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ᴌWith Built-in Bias Resistors. 5 1 A 2 C ᴌReduce a Quantity of Parts and Manufacturing Process.

KRC651E

Abstract: KRC652E KRC653E KRC654E KRC655E KRC656E
Contextual Info: SEMICONDUCTOR KRC651E~KRC656E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A ᴌReduce a Quantity of Parts and Manufacturing Process. 1 2 DIM A 5 A1 ᴌSimplify Circuit Design.

KRC651U

Abstract: KRC652U KRC653U KRC654U KRC655U KRC656U
Contextual Info: SEMICONDUCTOR KRC651U~KRC656U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ᴌWith Built-in Bias Resistors. 5 1 A 2 C ᴌReduce a Quantity of Parts and Manufacturing Process.

Contextual Info: SEMICONDUCTOR KRC651E~KRC656E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A ・Reduce a Quantity of Parts and Manufacturing Process. 1 2 DIM A 5 A1 ・Simplify Circuit Design.

KRC653U

Contextual Info: SEMICONDUCTOR KRC653U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking NC 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark NC KRC653U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs

KRC651F

Abstract: KRC652F KRC653F KRC654F
Contextual Info: SEMICONDUCTOR KRC651F~KRC654F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors. Simplify Circuit Design. DIM A A1 B B1 C D H T C High Packing Density.