KRC40 Search Results

KRC408

Contextual Info: SEMICONDUCTOR KRC408 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 NI 1 2 Item Marking Description Device Mark NI KRC408 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

marking NC

Abstract: KRC403E
Contextual Info: SEMICONDUCTOR KRC403E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking NC No. Item Marking 1 Device Mark NC KRC403E 2 hFE Grade - - 00.12.27 Revision No : 00 Description 1/1

KRC403V

Abstract: KRC401V KRC402V KRC404V KRC405V KRC406V
Contextual Info: SEMICONDUCTOR KRC401V~KRC406V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors. Simplify Circuit Design. H G A High Packing Density. D 2 Reduce a Quantity of Parts and Manufacturing Process.

MARK ND

Abstract: KRC404E marking nd
Contextual Info: SEMICONDUCTOR KRC404E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking ND No. Item Marking 1 Device Mark ND KRC404E 2 hFE Grade - - 00.12.27 Revision No : 00 Description 1/1

KRC407

Contextual Info: SEMICONDUCTOR KRC407 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 NH 1 2 Item Marking Description Device Mark NH KRC407 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: S EM IC O N D U C T O R KRC407E-KRC409E TECHNI CAL DATA EPI TAXI AL PLANAR NPN TRA NS IST OR SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A N D DRIVER CIRC U IT A PPLICATION. FEA T U RE S Î • Simplify Circuit Design DIM 2 • Reduce a Quantity o f Parts and Manufacturing Process

Contextual Info: SEMICONDUCTOR KRC401~KRC406 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES 2008. 10. 30 Revision No : 3 1/6

Contextual Info: SEMICONDUCTOR KRC407E~KRC409E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES 2008. 11. 20 Revision No : 2 1/4

KRC401E

Contextual Info: SEMICONDUCTOR KRC401E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking NA No. Item Marking 1 Device Mark NA KRC401E 2 hFE Grade - - 00.09.01 Revision No : 00 Description 1/1

KRC404V

Abstract: MARK ND ND marking
Contextual Info: SEMICONDUCTOR KRC404V MARKING SPECIFICATION VSM PACKAGE 1. Marking method Laser Marking 2. Marking ND No. 2002. 12. 31 Item Marking Description Device Mark ND KRC404V hFE Grade - - Revision No : 0 1/1

KRC401

Abstract: KRC402 KRC403 KRC404 KRC405 KRC406
Contextual Info: SEMICONDUCTOR KRC401~KRC406 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M With Built-in Bias Resistors. D 2 J A Simplify Circuit Design. 3 1 G Reduce a Quantity of Parts and Manufacturing Process.

marking NF

Abstract: KRC406E
Contextual Info: SEMICONDUCTOR KRC406E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking NF No. Item Marking 1 Device Mark NF KRC406E 2 hFE Grade - - 00.12.27 Revision No : 00 Description 1/1

KRC407V

Abstract: KRC408V KRC409V
Contextual Info: SEMICONDUCTOR KRC407V~KRC409V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ・With Built-in Bias Resistors ・Simplify Circuit Design H G A ・High Packing Density. D 2

KRC408E

Abstract: Ni marking
Contextual Info: SEMICONDUCTOR KRC408E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking NI No. Item Marking 1 Device Mark NI KRC408E 2 hFE Grade - - 00.12.27 Revision No : 00 Description 1/1

Contextual Info: SEMICONDUCTOR KRC407~KRC409 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES 2008. 10. 30 Revision No : 3 1/4

KRC407

Abstract: KRC408 KRC409
Contextual Info: SEMICONDUCTOR KRC407~KRC409 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M ᴌWith Built-in Bias Resistors ᴌSimplify Circuit Design D 3 1 G ᴌReduce a Quantity of Parts and Manufacturing Process

equivalent krc404

Abstract: KRC401 KRC402 KRC403 KRC404 KRC405 KRC406
Contextual Info: SEMICONDUCTOR KRC401~KRC406 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. D 3 1 G ᴌReduce a Quantity of Parts and Manufacturing Process.

406E

Abstract: KRC401E KRC402E KRC403E KRC404E KRC405E KRC406E NPN bias ESM
Contextual Info: SEMICONDUCTOR KRC401E~KRC406E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. D H G A 2 ᴌReduce a Quantity of Parts and Manufacturing Process.

a406 transistor

Contextual Info: KRC401 — SEMICONDUCTOR KRC406 EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.

KRC404

Abstract: MARK ND
Contextual Info: SEMICONDUCTOR KRC404 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ND 1 2 Item Marking Description Device Mark ND KRC404 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KRC407E

Abstract: marking nh
Contextual Info: SEMICONDUCTOR KRC407E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking NH No. Item Marking 1 Device Mark NH KRC407E 2 hFE Grade - - 00.09.01 Revision No : 00 Description 1/1

marking NB

Abstract: KRC402E
Contextual Info: SEMICONDUCTOR KRC402E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking NB No. 2000. 12. 27 Item Marking Description Device Mark NB KRC402E hFE Grade - - Revision No : 0 1/1

KRC404E

Abstract: KRC403E TRANSISTOR MARK NB 406E KRC401E KRC402E KRC405E KRC406E transistor mark NF
Contextual Info: SEMICONDUCTOR KRC401E~KRC406E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.

marking NE

Abstract: KRC405E mark NE
Contextual Info: SEMICONDUCTOR KRC405E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking NE No. 2006. 4. 14 Item Marking Description Device Mark NE KRC405E hFE Grade - - Revision No : 0 1/1