KRC28 Search Results

KRC282U

Abstract: KRC28
Contextual Info: SEMICONDUCTOR KRC282U MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking MR 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark MR KRC282U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: SEMICONDUCTOR KRC281S~KRC286S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES 2008. 10. 29 Revision No : 2 1/2

KRC281M

Abstract: KRC282M KRC283M KRC284M KRC285M KRC286M krc281m-krc286m
Contextual Info: KRC281MKRC286M SEMICONDUCTOR EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES • • • • • • High emitter-base voltage : VEB0=25V Min High reverse hFE : reverse hFE=150(Typ.) (Vce=_2V, Ic=-4mA)

Contextual Info: SEMICONDUCTOR KRC281S~KRC286S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E B L L 3 H G A 2 1 J DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20

marking MU

Abstract: KRC285U
Contextual Info: SEMICONDUCTOR KRC285U MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking MU 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark MU KRC285U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KRC284U

Abstract: marking Mt
Contextual Info: SEMICONDUCTOR KRC284U MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 MT 1 2 Item Marking Description Device Mark MT KRC284U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KRC286U

Contextual Info: SEMICONDUCTOR KRC286U MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 MV 1 2 Item Marking Description Device Mark MV KRC286U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: SEMICONDUCTOR KRC281M~KRC286M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. B FEATURES A High emitter-base voltage : VEBO=25V Min O F High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA)

KRC281S

Abstract: KRC282S KRC283S KRC284S KRC285S KRC286S MTB marking
Contextual Info: SEMICONDUCTOR KRC281S~KRC286S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E B L L 3 H G A 2 1 C J DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20

Contextual Info: SEMICONDUCTOR KRC281U~KRC286U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ・High emitter-base voltage : VEBO=25V Min ・High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ・Low on resistance : Ron=1Ω(Typ.) (IB=5mA)

KRC281M

Abstract: KRC282M KRC283M KRC284M KRC285M KRC286M
Contextual Info: SEMICONDUCTOR KRC281M~KRC286M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. B FEATURES A High emitter-base voltage : VEBO=25V Min O F High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA)

KRC281S

Contextual Info: SEMICONDUCTOR KRC281S~KRC286S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ・High emitter-base voltage : VEBO=25V Min ・High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ・Low on resistance : Ron=1Ω(Typ.) (IB=5mA)

KRC286U

Abstract: KRC281U KRC282U KRC283U KRC284U KRC285U
Contextual Info: SEMICONDUCTOR KRC281U~KRC286U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES E High emitter-base voltage : VEBO=25V Min B M High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA)

amoled

Abstract: 12 mosfet sot23 SMFB14 KUSB50QN pg05fsesc PG24EBUSC KDZ33EV KIB3461QN KIB3462QN KMA2D3P20S
Contextual Info: Block Function For Recommended Item Switching Diode / SBD KDS160F/V/E, KDS12□V/E, KDR7□0F/V/E MOSFET POWER KMA2D4P20S, KMA2D3P20S ZENER KDZ33EV BRT KRA3□□V/E MOSFET AUDIO MUTING MIC DISPLAY KMA2D4P20S, KMA2D3P20S BRT KRC28□U (KRC2□□S, KRC68□T)

KRC285U

Abstract: KRC286U audio transistor KRC281U KRC282U KRC283U KRC284U
Contextual Info: SEMICONDUCTOR KRC281U~KRC286U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ・High emitter-base voltage : VEBO=25V Min ・High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ・Low on resistance : Ron=1Ω(Typ.) (IB=5mA)

KRC281U

Contextual Info: SEMICONDUCTOR KRC281U MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking MQ 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark MQ KRC281U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KRC283U

Contextual Info: SEMICONDUCTOR KRC283U MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 MS 1 2 Item Marking Description Device Mark MS KRC283U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KRC281S

Abstract: KRC282S KRC283S KRC284S KRC285S KRC286S
Contextual Info: SEMICONDUCTOR KRC281S~KRC286S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES E B L L High emitter-base voltage : VEBO=25V Min 2 A H With Built-in Bias Resistors. 3 G Low on resistance : Ron=1 (Typ.) (IB=5mA)

Contextual Info: SEMICONDUCTOR KRC281M~KRC286M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. B A FEATURES ・High emitter-base voltage : VEBO=25V Min ・High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ・Low on resistance : Ron=1Ω(Typ.) (IB=5mA)

Contextual Info: KRC28S Linear ICs dc-to-dc/Charge Pump Voltage Converter status Military/High-RelN Output Voltage Nominal V 28 Load Current Max. (A)714m Drop-Out Volt Max. P(D) Max. (W) Nom. Supp (V)18 Minimum Operating Temp (øC)-25 Maximum Operating Temp (øC)70 Package StyleModule

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

Contextual Info: DC-DC Converters & AC-DC Power Supplies OPTIONAL ENVIRONMENTAL SCREENING All Pico DC-DC Converters and AC-DC Power Supplies are available with high reliability Screening options to insure the maximum quality unit for your system. Select from the list below or call factory for review of your specific applications.

Contextual Info: T Y P IC A L C H A R A C T E R IS T IC S : T e st c o n d itio n s: 25°C am bient O p e ra tin g tem p erature: - 25°C to 70°C am bient O utput voltage tole ran ce : ± 3 % at typical input voltage O u tp u t vo ltage tem p e ratu re co e fficie n t: 0.02% °C