KRA55 Search Results

KRA552E

Contextual Info: SEMICONDUCTOR KRA552E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking PB 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark PB KRA552E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

MARKING PD

Abstract: KRA554U
Contextual Info: SEMICONDUCTOR KRA554U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking PD 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark PD KRA554U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs

pj 88

Abstract: KRA557U KRA558U KRA559U
Contextual Info: SEMICONDUCTOR KRA557U~KRA559U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ᴌWith Built-in Bias Resistors ᴌSimplify Circuit Design ᴌReduce a Quantity of Parts and Manufacturing Process

Contextual Info: S EM IC O N D U C T O R KRA557F-KRA559F TECHNI CAL DATA EPITAX IAL PLANAR PNP TR A N SIST O R SW IT C H IN G A PPLICA TIO N . IN T ER FA C E C IR C U IT A N D D RIV ER C IR C U IT A PPLICA T IO N . FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design.

Contextual Info: SEMICONDUCTOR KRA551F~KRA554F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. C Simplify Circuit Design. C A DIM A A1 B B1 C D H T A1 Reduce a Quantity of Parts and Manufacturing Process.

Contextual Info: SEMICONDUCTOR KRA557E~KRA559E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A Reduce a Quantity of Parts and Manufacturing Process 1 2 DIM A 5 A1 Simplify Circuit Design

KRA551U

Abstract: KRA552U KRA553U KRA554U KRA555U KRA556U
Contextual Info: SEMICONDUCTOR KRA551U~KRA556U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 1 5 DIM A A1 B A 2 C Reduce a Quantity of Parts and Manufacturing Process.

KRA558E

Abstract: KRA557E KRA559E
Contextual Info: SEMICONDUCTOR KRA557E~KRA559E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B C 1 2 DIM A 5 A1 B B1 C D D A A1 FEATURES ᴌWith Built-in Bias Resistors ᴌSimplify Circuit Design ᴌReduce a Quantity of Parts and Manufacturing Process

KRA557E

Abstract: KRA558E KRA559E
Contextual Info: SEMICONDUCTOR KRA557E~KRA559E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A Reduce a Quantity of Parts and Manufacturing Process 1 2 DIM A 5 A1 Simplify Circuit Design

KRA555U

Contextual Info: SEMICONDUCTOR KRA555U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking 2. Marking 3 No. 0 1 PE 1 2 Item Marking Description Device Mark PE KRA555U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs

KRA557U

Contextual Info: SEMICONDUCTOR KRA557U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking PH 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark PH KRA557U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs

marking PA

Abstract: KRA551E
Contextual Info: SEMICONDUCTOR KRA551E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking PA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark PA KRA551E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRA552U

Contextual Info: SEMICONDUCTOR KRA552U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking PB 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark PB KRA552U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs

554f

Abstract: KRA551F L0005 resistor 554f
Contextual Info: SEMICONDUCTOR KRA551F-KRA554F TECHNICAL DATA E PIT A X IA L P L A N A R PNP T R A N SIST O R SW IT C H IN G A PPLICATION. IN TERFA CE CIR C U IT A N D DRIVER C IR C U IT APPLIC A TIO N . FEA T U R E S • With Built-in Bias Resistors. • Simplify Circuit Design.

KRA559E

Contextual Info: SEMICONDUCTOR KRA559E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking PJ 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark PJ KRA559E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRA553U

Contextual Info: SEMICONDUCTOR KRA553U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking PC 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark PC KRA553U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs

KRA556U

Contextual Info: SEMICONDUCTOR KRA556U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking 2. Marking 3 No. 0 1 PF 1 2 Item Marking Description Device Mark PF KRA556U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs

KRA555E

Contextual Info: SEMICONDUCTOR KRA555E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking PE 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark PE KRA555E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRA551U

Abstract: KRA552U KRA553U KRA554U KRA555U KRA556U
Contextual Info: SEMICONDUCTOR KRA551U~KRA556U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ・With Built-in Bias Resistors. 1 5 A 2 C ・Reduce a Quantity of Parts and Manufacturing Process.

KRA551F

Abstract: KRA552F resistor 554f KRA553F KRA554F
Contextual Info: SEMICONDUCTOR KRA551F~KRA554F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. C Simplify Circuit Design. C A DIM A A1 B B1 C D H T A1 Reduce a Quantity of Parts and Manufacturing Process.

KRA557E

Abstract: KRA558E KRA559E
Contextual Info: SEMICONDUCTOR KRA557E~KRA559E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B C 1 2 DIM A 5 A1 B B1 C D D A A1 FEATURES ᴌWith Built-in Bias Resistors ᴌSimplify Circuit Design ᴌReduce a Quantity of Parts and Manufacturing Process

Contextual Info: SEMICONDUCTOR KRA551F~KRA554F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ・With Built-in Bias Resistors. C ・Simplify Circuit Design. C A DIM A A1 B B1 C D H T A1

KRA557U

Abstract: KRA558U KRA559U
Contextual Info: SEMICONDUCTOR KRA557U~KRA559U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ᴌWith Built-in Bias Resistors ᴌSimplify Circuit Design ᴌReduce a Quantity of Parts and Manufacturing Process

556E

Abstract: KRA551E KRA552E KRA553E KRA554E KRA555E KRA556E
Contextual Info: SEMICONDUCTOR KRA551E~KRA556E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A ᴌReduce a Quantity of Parts and Manufacturing Process. 1 2 DIM A 5 A1 ᴌSimplify Circuit Design.