AB marking
Abstract: KRA352
Contextual Info: SEMICONDUCTOR KRA352 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 AB 1 2 Item Marking Description Device Mark AB KRA352 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
|
Original
|
kra352ab marking |
PDF
|
KRA355
Abstract: KRA354
Contextual Info: SEMICONDUCTOR KRA351~357 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E B M M FEATURES ・With Built-in Bias Resistors. D J A 2 G ・Simplify Circuit Design. 3 1 ・Reduce a Quantity of Parts and Manufacturing Process.
|
Original
|
kra351-500makra352kra353+3kra354ra351kra355
|
PDF
|
MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
|
Original
|
mn1280kgt50n60kdabc547 smd transistorkia1117af+6transistor smd zgy6 smd transistormb4213y4 smd transistorsmd transistor zaakgt25n120nda
|
PDF
|
oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
|
Original
|
kia7900pitc7sh04fukic7sh04fusc604+16kac3301qnm51943kia7042ap/aftc7sh08fukic7sh08fult1937oz960khb*9d5n20pmb4213kia78*pimn1280f10p048kia7812amje13007mb4213 equivalenttransistor smd n2 3j
|
PDF
|
|
Contextual Info: SEM ICONDUCTOR KRA351-357 TECHNI CAL DATA EPITAX IAL PLANAR PNP TR A N SIST O R HIGH C U R R E N T SW ITC H IN G APPLICATION. INTERFA CE CIRCU IT A ND DRIVER CIRC U IT A PPLICATION. FEA T U RE S • With Built-in Bias Resistors. • Simplify Circuit Design.
|
OCR Scan
|
kra351-357-500makra351kra352+4kra353kra354kra355kra356
|
PDF
|
KF6N60
Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION
|
Original
|
usfb053usfb13usfb13ausfb13l+16usfb14usfz10vusfz11vusfz12vusfz13vusfz15vkf6n602sk3850 equivalentkf9n25kf7n50mdf10n65b transistorpanasonic zenerkf10n60kia278r12pi equivalentkid65003ap equivalentkia578r05
|
PDF
|
KRA356
Abstract: KRA353 KRA351 KRA354 KRA352 KRA355 KRA357
Contextual Info: SEMICONDUCTOR KRA351~357 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M ・With Built-in Bias Resistors. D A J 2 ・Simplify Circuit Design. 3 1 G ・Reduce a Quantity of Parts and Manufacturing Process.
|
Original
|
kra351kra352kra353kra355+4kra356kra357kra354kra351357
|
PDF
|
AG marking
Abstract: KRA351
Contextual Info: SEMICONDUCTOR KRA351~357 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M With Built-in Bias Resistors. D A J 2 Simplify Circuit Design. 3 1 G Reduce a Quantity of Parts and Manufacturing Process.
|
Original
|
kra351-500ma-50ma-20ma+3100mhzkra352ag marking
|
PDF
|