KRA312E Search Results
KRA312E Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| KRA312E | Korea Electronics | Built in Bias Resistor | Original | 65.95KB | 2 | ||
| KRA312E | Korea Electronics | TRANS DIGITAL BJT PNP 50V 100MA 3ESM | Original | 48.63KB | 4 |
KRA312E Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
KRA312EContextual Info: SEMICONDUCTOR KRA312E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking PN No. 2000. 12. 27 Item Marking Description Device Mark PN KRA312E hFE Grade - - Revision No : 0 1/1 |
Original |
kra312e | |
IC 314E
Abstract: KRA310E KRA311E KRA312E KRA313E KRA314E
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Original |
kra310ekra314ekra313eic 314e+2 | |
alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
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Original |
hig86-755-3679515alternator diode 1776 b2az marking transistor sot-23smd sot23 transistor mark y2+7 | |
khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
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Original |
2n2904ebc859kds135s2n2906e+16 | |
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Contextual Info: SEMICONDUCTOR TECHNICAL DATA KRA310EKRA314E EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. |
OCR Scan |
kra310ekra314ekra314ekra310ekra311e+1 | |
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Contextual Info: SEMICONDUCTOR KRA310E~KRA314E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ・With Built-in Bias Resistors. ・Simplify Circuit Design. D A G 2 C H ・Reduce a Quantity of Parts and Manufacturing Process. |
Original |
kra310ekra314e | |
LM8550
Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
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Original |
2n2222/aktn2222/a2sa1150kta1272+16 | |
KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
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Original |
2n2904ebc859kds135s2n2906e+16 | |
IC 314E
Abstract: KRA313E KRA314E KRA310E KRA311E KRA312E
|
Original |
kra310ekra314ekra313eic 314e+2 | |
MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
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Original |
mn1280kgt50n60kdabc547 smd transistorkia1117af+6 | |
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Contextual Info: SEMICONDUCTOR KRA310E~KRA314E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ・With Built-in Bias Resistors. ・Simplify Circuit Design. D 2 A G DIM A B C D H ・Reduce a Quantity of Parts and Manufacturing Process. |
Original |
kra310ekra314ekra313e | |
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Contextual Info: SEM ICONDUCTOR KRA310E-KRA314E TECHNI CAL DATA EPI TAXI AL PLANAR PNP T RANSI ST OR SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A N D DRIVER CIRC U IT A PPLICATION. FEA T U RE S Î r — • With Built-in Bias Resistors. • Simplify Circuit Design. DIM |
OCR Scan |
kra310e-kra314ekra312ekra313ekra314e+2 | |
oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
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Original |
kia7900pitc7sh04fukic7sh04fusc604+16 | |
S78DM12Q
Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
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Original |
sn431sun0550f/do-220ab-3lo-220f-3l+14 | |
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KRA310E
Abstract: KRA311E KRA312E KRA313E KRA314E
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Original |
kra310ekra314ekra311ekra313e+1 | |
KF6N60
Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
|
Original |
usfb053usfb13usfb13ausfb13l+16 | |