KOTO Search Results

"vlsi technology" abstract

Abstract: "vlsi technology" abstract for split-gate flash
Contextual Info: Endurance Characteristics of SuperFlash Memory Xian Liu*, Viktor Markov, Alexander Kotov, Tho Ngoc Dang, Amitay Levi Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA94086, USA Ian Yue, Andy Wang, and Rodger Qian SST China, Ltd., Bldg. 24, No.115, Lane 572, Bibo Road, Zhangjiang Hi-Tech Park, Shanghai, 201203, P.R. China

flash "high temperature data retention" mechanism

Abstract: Angstrem Hebrew material science and technology 1117 FG 0.18-um CMOS Flash technology DSASW0037374
Contextual Info: SuperFlash Memory Program/Erase Endurance Viktor Markov, Xian Liu, Alexander Kotov, Amitay Levi, Tho Ngoc Dang, and Yuri Tkachev Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, E-mail: kotov@sst.com Abstract––Program/erase endurance data for SuperFlash

RD75YB

Contextual Info: renepaTopHbiü rpuod Transmitting triode Sendetriode RD75YB - 3 7 :a nPHMEHEHHE TECJIA RD75YB H B j in e T c a r e H e p a - J Ia M n a TOpHblM TpHOÄOM C npHMOHaKajIbHbIM KaTO- äom h 3Ha>ieHHeM pacceHBaeMoñ aHOÄOM 75 MomHocTH KBT, KOTopHH npeÄHa3HaieH

RD300S

Abstract: tesla rf oscillator transmitting triode
Contextual Info: renepaTOpHbiú Tpuod T r a n s m it t in g trio d e S e n d e t r io d e RD300S -nPHMEHEHHE TECJIA RD300S J Ia M n a a B jia e rc a re H e p a - TOpHbIM TpHOÄOM C IipHMOHaKaJUJU.IM Katoäom h 3Ha"ieHHeM pacceHBaeMoü aHOÄOM MomHocTH 300 BT, KOTopi.iü npczuïaana'icH

ky 202 h

Abstract: a1026 ky 202 TESLA 1
Contextual Info: renepaTopHbiü Tpuod T ra n sm ittin g triode Send etriode RD20XF - * 148*1 9 tro*0* nPHM EHEHHE 9 JIaM na T E C J IA R D 2 0 X F hbjihctcä reH epaTOpHKM TpHOÄOM C B03flyiHHbIM OXJiaJKfleHHeM h 3Ha^eHHeM pacceHBaeMOH aHoaoM MOUXHOCTH 20 KBT, KOTopHH npejmasHa^ieH

Tesla

Contextual Info: r 0 3 0 Tp0 H Rectifying discharge tube G a sge ß llte Gleichrichterröhre UA1A - nPHMEHEHHE JIaMna TECJIA UA1A HBjiseTCH ra30Tpc>HOM C OÄHHM aHOAOM, KOTOpblH HanOJIHeH pTyTbio h npeÄHaäHa'ieH ajia npHMeHeHHs B BbinpHMHTejIbHbIX yCTpOHCTBaX B blC O K O ro

40rs40

Abstract: bt 2328
Contextual Info: M M n y A b C H b iü r e r p o d P ulse tetrode Im pulstetrode 40RS40 - nPHMEHEHHE JIaMna TECJIA 40RS40 «BjiaeTCH j i y i e BbiM TC 'Tpoio.M co 3 H a ie H n e M p a c c e H B a e MOÜ aHOÄOM MOEIHOCTH 60 BT, KOTOptlii n]x;üra:ii;a-ieii ,1.1k paßorw b HMnyjitcHOM

QUANTUM CAPACITIVE

Abstract: floating-gate 4156C flash "high temperature data retention" mechanism split-gate flash quantum dot
Contextual Info: Detection of Single-Electron Transfer Events and Capacitance Measurements in Submicron Floating-Gate Memory Cells Yuri Tkachev and Alexander Kotov Silicon Storage Technology, Inc. Sunnyvale, USA e-mail: ytkachev@sst.com Abstract—A simple technique for monitoring floating gate

split-gate flash

Abstract: NAND read disturb markov sl 100 sem vlsi tech
Contextual Info: Charge-Gain Program Disturb Mechanism in Split-Gate Flash Memory Cell V. Markov, K. Korablev, A. Kotov, X. Liu, Y.B. Jia, T.N. Dang, and A. Levi Silicon Storage Technology, Inc. 1171 Sonora Court, Sunnyvale, CA 94086 408-523-8506; fax: 408-736-4409; e-mail: vmarkov@sst.com

LW-230V-AC

Abstract: BTA230 230B lY23 LG-230V-DC LR12V
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 CBeTOAMOAbi c MOKoneM TMna BA 9S CBeT0flM0flHflMaMeTp0M 8 mm c u,0K0neM TMna BA9S. npMMeHaroTca BMecTO o6 h h h h x naMnoneK BA 9S, nepefl KOTopbiMM MMeroT p^fl npeMMy^ecTB, HanpMMep, 6onbWMM pa6oHMM pecypc m B03M0WH0CTb Bbi6opa

Contextual Info: reneparopHbiä rpuod T ra n sm itting triode Sendetriode RD12YH - nPHMEHEHHE J Ia M n a T E C J I A R D 1 2 Y H e b j ih g t c e re H e p a - TOpHblM TpHOÄOM C BOÄHHHM OXJia*ÄeHHeM h SHayeHHeM pacceHBaeMoü aHOjioM MoiqHOCTiT 1 2 KBT, KOTOpBIH npe,aHa3Ha"ieH A n a

AABJ

Abstract: RD150YB
Contextual Info: reneparopHbiü rpuod T ra n sm ittin g triode Sendetriode RD150YB -nPHM EHEHHE TECJIA RD YB a JIaM n a 150 SBjm erc reHeparopH W M TpHoaoM c npHMOHaKaJi&HMM Katoäom h 3HaqeHneM pacceH Bae^oä aHcwoM MoupiocTH 150 KBT, KOTopfciü npeaH a3Ha>jeH ÄJia npHMeHeHKa b Ka^ecTBe ycHjiHTejia

Contextual Info: rm eparoptibiii rpuod Transmitting triode Sendetriode RD150YA - nPHMEHEHHE JIaMna TECJIA RD 150YA jaBjuieTCH npa- MOHaKäJibHLiM reHepaTOpHbiM TpnojxoM co 3HaneHHeM pacceHBaeMoä aHoaoM MomHOCTH 150 KBT, KOTOpblH npe,HHa3HaHeH ÄJIH paôoTbi B Ka^ecTBe ycminTeji« moujhocth

Contextual Info: renepaTopHbiü r p u o d Transm itting triode Sendetriode RD75YH 37 - nPHM EHEHHE J Ia M n a TECJIA RD75YH HBjmeTCH reH ep aTOpHW M TpHO ÄO M C npÂM O H aKaÆ & HM M KaTOäom h 3H a>ieH H ek p a c c e H B a e M o ä a H o n o M MOiiiHOCTH 75 KBT, KOTopHH npeÄHa3Ha>ieH

Contextual Info: renepam pHbiü Tpuod T ra n sm ittin g triode Sendetrio d e RD12XB -nPHM EHEHHE JIaMna TECJIA RD12XB HBJiaeTCfl reHepa- TOpHBIM TpH O aO M C B 03flyiIIH B IM O X JiaJK fleH H eM h SH aH eH H eM p a c c e H B a e M o ä a H o a o M MomHOCTH 12 KBT, KOTopbiíí npeaHasHa^eH

Contextual Info: Revision Date: May 5, 1997 Kotos _ AP9A402A • s e m ic o n d u c t o r 1024 x 9 Asynchronous CMOS FIFO Features • Fast access times: 15, 20, 25, 35 ns • Fast-fall-through time architecture based on CMOS dual-port SRAM technology • Independent timing on input and output port

Contextual Info: V o CD DO NOT SC ALE DRAWING a DWG. NO. SD-5 128 EC NO. DRWNs CH'Ks APPR: co CO EC NO. DRWN: CH'Ks APPR: EC NO, DRWN; CH'Ks APPR: -vl R E V IS E D EC NO. J 2 0 0 4 - 2 2 9 6 A I N O M I Y A ' 04/ 02/05 KoTO JO '04/02/05 appr; M „S A S A O '04/ 02/05 d r w n s M oN

53TR40

Abstract: MA 436 von Tesla thyratron tube operation Thyratron thyratron tube radiation tube service tesla tesla MA 436 Tesla
Contextual Info: H M n y A b C H b iü T U p a r p O H Pulse thyratron Im p ulsth y ra tro n 53TR40 -nPHM EHEH HE JIaMna T E C J IA 53T R 40 HBjiHeTCH HMnyjibcHblM THpaTpOHOM, HanOJIHeHHbIM BOÄOpOäom, KOTopMH npejma 3Ha>ieH äjih ynpaBjieHHH 6 0 J IB IU H M H 3 H a ie H H a M H

6j1 tube

Abstract: 6N16B 6N1P TUBE 6j1 TRIODE 6C4C 6H13C 6c8c tube 6H7C 6n1p-ew 6N24P
Contextual Info: nPHEMHO-yCMilMTEnbHblE nAM nbi RECEIVING TUBES K huto 2 Book 2 B/O „MALLinPMEOPMHTOPr“ CCCP MOCKBA V/O “MASHPRIBORINTORG” USSR MOSCOW Ccc70 yd 13082.01 CnpaBo^HHK-KaTajior „npHeMHO-ycHjiHTejibHbie jiaMnbi“ n03B0jineT 03HaK0MHTbC5i c HOMeHKJiaTypOH H TeXHHqeCKHMH X â p a K T e pHCTHKâMH npHeMHOycHjiHTejibHbix jiaMn, KOTOpbie S K c n o p r a p y e T CoBeTCKHH Cok 3. CnpaBO^HHK-KaTajior npeziHasHa^eH

B10X38S-32A

Abstract: B10X38T-16A B10X38S-2A B10X38T-25A B10X38SS-16A B10X38S-6A NPM motor b10x38 B10X38SS-1
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 npoMbiwneHHbie npeAOxpaHMTenu 10,3 x 38 mm MeA^eHHbie, 6bicTpbie m CBepx6bicTpbie KepaMMHecKMe npefloxpaHMTenM pa3MepoM 10,3x38 m m . MeA^eHHue: - aM (Motor Rated) - noflxofl^T Arm 3aw,MTbi npoBOflOB m ydpoMCTB, b KOTOpbix

M4 JJ

Contextual Info: DWG. NO. S D - 5 4 6 4 2 - 0 13 DO NOT SCALE DRAWING •ËB4NO. DRWNs CH'Ks APPRs 3.55 ■kS3NO. DRWN: CH'Ks APPRs £B2NO. DRWN; CH'Ks APPRs te i no. DRWNs CH'Ks APPR;_ R ELEASED ' 04/ 02/12 tB0NO. J2004- 23 97 DRWN: M 0 N IN 0 M I Y A CH'Ks KoTO JO

tesla rf oscillator

Abstract: transmitting triode
Contextual Info: FeHeparopHbiü rptiod Transm itting triode Sendetriode RD2XG -nPHMEHEHHE J Ia M n a TECJIA RD2XG HBjiaeTca KOPOTKOBOJIHOBHM TpHCWOM C B03ÆyiHHbIM OX.'IilVK' ÄeHHeM, 3H ayeH ne pacceH B aeM oü aHOÄOM MOHJHOCTH KOTOpOrO COCTaBJIHeT 2 KBT. J la M n a npe a H aa H a'ie H a « jia n p H M e H e im a

RL65A

Abstract: oszillator
Contextual Info: renepüTopubiu nem od Transm itting pentode Sendepentode RL65A - nPHM EHEHHE JIaM na TECJIA RL65A h b ^ h c tc h reH epaTopHbiM neHTOflOM c KaTOÄOM npHM oro HaK ajia h 3Ha^eHHeM pacceHBaeM oii aHojiOM MomHOCTH 65 BT, KOTOpbiH npeaHaaHa^eH ÄJiH npHMeHeHHfl b Ka^ecTBe reH epaT opa

K140MA1

Abstract: K190KT2 K174YH7 K554CA2 k159ht1 hj3h 190KT2 transistor k513 K190KT1 K159
Contextual Info: HHfErPAIIbHbli NHKPOCXENbl INTEGRATED MICROCIRCUITS MHTETPAJlbHblE MklKPOCXEMbl IN TEG R A TED M ICRO CIRCU ITS M acTb Partii II AH AJIOrOBblE M HTETPAJlbHblE MklKPOCXEM bl IN TEGRATED ANALOG M ICRO CIRCUITS 3 ne«TpoHHan npoHbim neMHocTb C C C P - oamh mi xpynHeHuiHX b MMpe npoMJBOAHTeneü BbicoKoxanecTBeHHbix M3 AenMM jneKTpoHHoM tcxhm km , KoTopbie b HaCToMLijee sperm