KM736V795 Search Results
KM736V795 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| KM736V795-60 | Samsung Electronics | 128Kx36 Synchronous SRAM | Original | 436.25KB | 15 | ||
| KM736V795-67 | Samsung Electronics | 128Kx36 Synchronous SRAM | Original | 436.25KB | 15 |
KM736V795 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: KM736V795 128Kx36 Synchronous SRAM D o c u m e n t T itle 128Kx36-Bit Synchronous Pipelined Burst SRAM R e y is io n - H is lo r y Rev. No. 0 .0 0.1 History Draft Date Initial d ra ft F e bru ary. 02. 1998 C h a n g e D C c h a ra c te ris tic s V d d c o n d itio n fro m V d d = 3 .3 V + 1 0 % /- 5 % C h a n g e |
OCR Scan |
km736v795128kx36128kx36-bit | |
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Contextual Info: KM736V795 128Kx36 Synchronous SRAM Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 In itia l d r a ft February. 02. 1 9 9 8 Prelim inary 0.1 Change DC characteristics V d d condition from V d d = 3 .3 V + 1 0 % /- 5 % Change |
OCR Scan |
km736v795128kx36128kx36-bit100-tqfp-1420a+1 | |
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Contextual Info: KM736V795 128Kx36 Synchronous SRAM 128Kx36-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. • 2 Stage Pipelined operation with 4 Buret. • On-Chip Address Counter. • Self-Timed Write Cycle. • On-Chip Address and Control Registers. |
OCR Scan |
km736v795100-tqfp-1420a128kx36 | |
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Contextual Info: 128Kx36 Synchronous SRAM KM736V795 Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft February. 02. 1998 Preliminary 0.1 Change DC characteristics VDD condition from VDD=3.3V+10%/-5% Change |
Original |
128kx36km736v795128kx36-bitwidth20ns+1 | |
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Contextual Info: 128Kx36 Synchronous SRAM KM736V795 Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft February. 02. 1998 Preliminary 0.1 Change DC characteristics VDD condition from VDD=3.3V+10%/-5% Change |
Original |
128kx36km736v795128kx36-bitwidth20ns+1 | |
KM736V789T-60
Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
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OCR Scan |
256kb32kx8km62256ci-5/5lkm62256cle+16 | |
KM736V789-60
Abstract: 512k*8 sram KM68U4000A
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OCR Scan |
km622s6ckm62256dkm68s12akm68512b+7 |