KM718V895 Search Results
KM718V895 Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| KM718V895-60 | Samsung Electronics | 256K x 18-Bit Synchronous Pipelined Burst SRAM | Original | 409.01KB | 15 | ||
| KM718V895-67 | Samsung Electronics | 256K x 18-Bit Synchronous Pipelined Burst SRAM | Original | 409.01KB | 15 | ||
| KM718V895-72 | Samsung Electronics | 256K x 18-Bit Synchronous Pipelined Burst SRAM | Original | 409.01KB | 15 | ||
| KM718V895-85 | Samsung Electronics | 256K x 18-Bit Synchronous Pipelined Burst SRAM | Original | 409.01KB | 15 |
KM718V895 Price and Stock
Samsung Electronics Co. Ltd KM718V895TE-60IN STOCK SHIP TODAY |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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KM718V895TE-60 | 4 |
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KM718V895 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: KM718V895 256Kx18 Synchronous SRAM Document Title 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0 .0 Initial d ra ft F e bru ary. 02. 1998 P re lim in a ry 0.1 C h a n g e DC c h a ra c te ris tic s V dd c o n d itio n fro m V d d = 3 .3 V + 1 0 % /-5 % C h a n g e |
OCR Scan |
km718v895256kx18256kx18-bit100-tqfp-1420a+1 | |
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Contextual Info: KM718V895 256Kx18 Synchronous SRAM 256Kx18-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. • 2 Stage Pipelined Operation With 4 Buret • On-Chip Address Counter. • Self-Timed Write Cyde. • On-Chip Address and Control Registers. |
OCR Scan |
km718v895100-tqfp-1420a256kx1825skx1s | |
KM718V895Contextual Info: KM718V895 256Kx18 Synchronous SRAM Document Title 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft February. 02. 1998 Preliminary 0.1 Change DC characteristics VDD condition from VDD=3.3V+10%/-5% Change |
Original |
km718v895256kx18256kx18-bitwidth20ns+1 | |
KM718V895Contextual Info: KM718V895 256Kx18 Synchronous SRAM Document Title 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft February. 02. 1998 Preliminary 0.1 Change DC characteristics VDD condition from VDD=3.3V+10%/-5% Change |
Original |
km718v895256kx18256kx18-bit100-tqfp-1420a | |
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Contextual Info: KM718V895 256Kx18 Synchronous SRAM Document Title 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft F e bru ary. 02. 1998 P re lim in a ry 0.1 C h a n g e D C c h a ra c te ris tic s V dd c o n d itio n fro m V dd = 3 .3 V + 1 0 % /-5 % C h a n g e |
OCR Scan |
km718v895256kx18256kx18-bit15electronics | |
KM736V789T-60
Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
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OCR Scan |
256kb32kx8km62256ci-5/5lkm62256cle+16 | |
K7A803609B-PC25
Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
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Original |
k6r1016v1c-fc10k6r1016v1c-fc12k6r1016v1c-fc15k6r1016v1c-fc20+16 | |
KM736V789-60
Abstract: 512k*8 sram KM68U4000A
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OCR Scan |
km622s6ckm62256dkm68s12akm68512b+7 | |
KM62256BLG-7
Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
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Original |
c7c1334-10acis61nw6432-8tqc7c1334-5acis61nw6432-5tq+16 |