KM64B261AJ Search Results

KM64B261AJ Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
KM64B261AJ-6		Samsung Electronics	64K x 4-Bit (with OE) High Speed BiCMOS Static RAM	Scan	PDF	180.55KB	6
KM64B261AJ-7		Samsung Electronics	64K x 4-Bit (with OE) High Speed BiCMOS Static RAM	Scan	PDF	180.55KB	6
KM64B261AJ-8		Samsung Electronics	64K x 4-Bit (with OE) High Speed BiCMOS Static RAM	Scan	PDF	180.55KB	6

KM64B261AJ Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: KM64B261A BiCMOS SRAM 64Kx4 Bit With OE High speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6, 7, 8 ns (Max.) • Low Power Dissipation Standby (TTL) : 90 mA (Max.) (CMOS) : 20 mA (Max.) Operating Current: 160 mA (f=100MHz) • Single 5V±5% Power Supply	OCR Scan	KM64B261A 64Kx4 100MHz) KM64B261AJ 28-SOJ-300 KM64B261A 144-bit 7Tb414a	PDF
Contextual Info: KM64B261A BiCMOS SRAM 64Kx4 Bit With OE High speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6, 7, 8 ns (Max.) • Low Power Dissipation Standby (TTL) : 90 mA (Max.) (CMOS) : 20 mA (Max.) Operating Current: 160 mA (f=100MHz) • Single 5V±5% Power Supply	OCR Scan	KM64B261A 64Kx4 100MHz) KM64B261AJ 28-SQJ-300 KM64B261A 144-bit	PDF
Contextual Info: KM64B261A BiCMOS SRAM 64K x 4 Bit High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES Fast Access Time 6, 7, 8 § Max. Low Power Dissipation Standby (TTL) (CMOS) : 90§ (Max.) : 2 0 § (Max.) Operating Current : 160§ (f=100MHz) Single 5.0V±5% Power Supply	OCR Scan	KM64B261A 100MHz) KM64B261AJ 28-SOJ-3QO KM64B261A 144-bit May-1997 28-SOJ-300	PDF
GDS3712 Abstract: D023 Contextual Info: KM64B261A BiCMOS SRAM 64Kx4 Bit With UE High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6, 7, 8 ns (Max.) • Low Power Dissipation Standby (TTL) : 90 mA (Max.) (CMOS) : 20 mA (Max.) Operating Current: 160 mA (f=100MHz) • Single 5V±5% Power Supply	OCR Scan	KM64B261A 64Kx4 100MHz) KM64B261AJ 28-SOJ-3QO KM64B261A 144-bit GDS3712 D023	PDF
Contextual Info: KM64B261A BiCMOS SRAM 64Kx4 Bit With UB High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 6, 7, 8 ns (Max.) • Low Power Dissipation Standby (TTL) : 90 mA (Max.) (CMOS) : 20 m A (Max.) Operating Current: 160 m A (f=100MHz)	OCR Scan	KM64B261A 64Kx4 100MHz) KM64B261AJ 28-SOJ-300 KM64B261A 144-bit	PDF