KM644002J Search Results

Contextual Info: PRELIMINARY KM644002 CMOS SRAM 1,048,576 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS): 10mA (Max.) Operating : KM644002J-15: 170mA (Max.)

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

Contextual Info: KM644002, KM644002E, KM644002I CMOS SRAM Document Title 1Mx4 Bit with OË High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0

Contextual Info: KM644002/L CMOSSRAM 1,048,576 WORD x 4 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 17, 20, 25ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS) : 10mA (Max.) L-Ver : 500«A (Max.) Operating : KM644002-17 : 170mA (Max.)

KM684002J

Abstract: KM644002J20
Contextual Info: KM684002/KM684002L CMOS SRAM 5 1 2 K x 8 B it High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 17,20,25 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS):10m A(Max.) 5Q0nA(max.)-L Ver Operating KM684002/L-17 : 180 mA(Max.)

Contextual Info: KM644002/KM644002L CMOS SRAM 1M x 4 Bit With UE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 17,20,25 ns(Max.) •Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS):10 mA(Max.) 500|4A(max.)-L Ver Operating KM644002/L-17 : 170 mA(Max.)

Contextual Info: KM644002/KM644002L CMOS SRAM 1M x 4 Bit With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 17,20,25 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 10 mA(Max.) 500nA(m ax.)-L Ver Operating KM644002/L-17 : 170m A(M ax.)

Contextual Info: CMOS SRAM KM644002/L 1,048,576 WORD x 4 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 17, 20, 25ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS) : 10mA (Max.) L-Ver : 500/j A (Max.) Operating : KM644002-17 : 170mA (Max.)

Contextual Info: SAMSUNG ELECTRONICS INC b7E ]> • 7 ^ b m M 5 DD177Dh 117 SPIGK PRELIMINARY KM644002 CMOS SRAM 1,048,576 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15,20, 25ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)

Contextual Info: KM644002/L CMOS SRAM 1,048,576 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e : 17, 20, 25ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS) :10m A (Max.) L-Ver : SOO^A (Max.) Operating : KM644002-17 : 170mA (Max.)

KM644002J-20

Abstract: KM644002J-17 KM644002J20
Contextual Info: KM644002/KM644002L CMOS SRAM 1M x 4 Bit With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 17,20,25 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 10 mA(Max.) 500nA(m ax.)-L Ver Operating KM644002/L-17 : 170 mA(Max.)

Contextual Info: KM644002/KM644002L CMOS SRAM 1M x 4 Bit With OE High-Speed C M O S Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 17,20,25 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (C M O S):10m A(M ax.) 500nA(m ax.)-L Ver Operating KM644002/L-17 : 170m A (M ax.)