KM6161000BLI Search Results

TT1102

Abstract: 100PF
Contextual Info: Preliminary CMOS SRAM KM6161000BLI / Ll-L 64Kx16 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION The KM6161000BLI/L1-L is a 1,048,576-bit high speed • Industrial Temperature Range : -40 to 85°C Static Random Access Memory organized as 65,536

Contextual Info: Preliminary CMOS SRAM KM6161000BLI / Ll-L 64Kx16 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION •Industrial Temperature Range : -40 to 85°C The KM6161000BLI/LI-L is a 1,048,576-bit high speed >Fast Access Time : 70/100 ns max.

KM736V789T-60

Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
Contextual Info: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L

KM6161000BLT7L

Abstract: KM6161000BLTI-7L
Contextual Info: KM6161000B Family CMOS SRAM Document Title 64K x16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft August 12, 1995 Preliminary 1.0 Finalize - One datasheet for commercial and industrial part. April 15, 1996

Contextual Info: KM6161000B Family CMOS SRAM 64K x16 bit Low Power CMOS Static RAM FEATURES SUMMARY GENERAL DESCRIPTION • Process Technology : Poly Load • Organization : 64K x16 _ • Data Byte Control : LB=I/O i ~8, UB=I/09~16 • Power Supply Voltage : 4.5~5.5V • Low Data Retention Voltage : 2V Min

KM6161000BLT5L

Contextual Info: KM6161000B Family CMOS SRAM 64K x16 bit Low Power CMOS Static RAM FEATURES SUMMARY GENERAL DESCRIPTION The KM6161000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges and has various package

Contextual Info: KM6161000B Family CMOS SRAM Document Title 64K x16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft August 12, 1995 Preliminary 1.0 Finalize - One datasheet for commercial and industrial part. April 15, 1996

Contextual Info: KM6161000B Family CMOS SRAM Document Title 64K x16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft August 12, 1995 Preliminary 1.0 Finalize - One datasheet for commercial and industrial part. April 15, 1996

C-4555

Abstract: c4555 32TSOP
Contextual Info: M E M O R Y ICs FUNCTION G UIDE 1. Low Power SRAM 5V Operation Density 256K 512K 1M Org. Product No' 32K x 3 64K x 3 128K x 8 6 4 K x 16 4M 512K x 8 Icc2/lsbl Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 C 45/55/70 70/100 70/20 28-TSOP(l) Reverse KM62256CLE

KM616U1000BL-L

Contextual Info: MEMORY ICs FUNCTION GUIDE 1. Low Power SRAM 5V Operation Den. 256K Org. 32K X 8 Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 ’ C 4 5/55/70 KM62256CLE -2 5 -8 5 =C KM62256CLI KM62256CLI-L -4 0 -8 5 °C 1M 64K X 8 KM68512CL KM68512CL-L 0 -7 0 ‘ C KM68512CLI

Contextual Info: KM6161000B Family CMOS SRAM Document Title 64K x16 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft August 12th 1995 Preliminary 1.0 Finalize - One datasheet for commercial and industrial part. April 15th 1996 Final

Contextual Info: KM61610QQB Family CMOS SRAM 64K x16 bit Low Power CMOS Static RAM FEATURES SUMMARY GENERAL DESCRIPTION • • • • • • . The KM6161000B fam ily is fabricated by SAMSUNG’S advanced CMOS process technology. The fam ily support vari­ ous operating temperature ranges and has various package

a13e

Contextual Info: KM6161000B Family CMOS SRAM 64Kx16 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64Kx16 • Data Byte Control : /LB=I/01~8, /UB=I/09~16 • Power Supply Voltage : 5.0V +/-10% • Low Data Retention Voltage : 2V Min