KM48V8000 Search Results

Contextual Info: ADVANCED KM48V8000 CMOS DRAM 8M X 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRA C • • • • • • • • • • tCA C tRC KM48V8000-5 50ns 13ns 90ns KM48V8000-6 60ns 15ns 110ns KM48V8000-7 70ns

Contextual Info: ADVANCED KM48V8000 CMOS DRAM 8M X 8 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tR A C tC A C tR C KM48V8000-5 50ns 13ns 90ns KM48V8000-6 60ns 15ns 110ns KM48V8000-7 70ns 20ns 130ns • Fast Page Mode operation

Contextual Info: KM48V8000B, KM48V8100B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal or Low power) are

Contextual Info: KM48V8000C,KM48V8100C CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal or Low power) are

Contextual Info: TARGET CMOS DRAM KM48V8000A, KM48V8100A 8M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,

Contextual Info: CMOS DRAM KM48V8000B, KM48V81OOB 8M x 8bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION T h is is a fa m ily o f 8 ,3 8 8 ,6 0 8 x 8 bit F ast P a g e M ode C M O S D R A M s. F ast P age M ode o ffe rs high sp e e d ran d o m a cce ss o f m e m o ry cells

Contextual Info: CMOS DRAM KM48V8000C,KM48V81 OOC 8M x 8bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION T his is a fa m ily of 8,3 88,608 x 8 bit Fast Page M ode C M O S DR AM s. Fast Page M ode offers high speed random access o f m em ory cells w ith in the sam e row. R efresh cycle 4 K Ref. o r 8K Ref. , access tim e (-45, -5 o r -6), po w e r co n su m p tio n (N o rm a l o r Low pow er) are

Contextual Info: PRELIMINARY CMOS DRAM KM48V8000, KM48V8100 8M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,

Contextual Info: KM48V8000B, KM48V8100B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal or Low power) are

Contextual Info: KM48V8000A, KM48V8100A CMOS DRAM 8M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 8,388,608 x 8 bit Fast Page Mode CM O S DRAMs. Fast Page M ode offers high speed random access of m em ory cells w ithin the sam e row. Refresh cycle 4K Ref. o r 8K Ref. , access tim e(-5, -6,

31DQ5

Contextual Info: TARGET CMOS DRAM KM48V8000A, KM48V8100A 8 M x 8 B i t CM O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,

Contextual Info: ADVANCED KM48V8000 CM O S DRAM 8M X 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48V8000 is a high speed CMOS 8, 388,608 bit x 8 Dynamic Random Access Memory. Its design is optimized for high performance applications

KM48V8000A

Contextual Info: KM48V8000A, KM48V8100A CMOS DRAM 8M x 8 Bit CM O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,

Contextual Info: KM48V8000A, KM48V8100A CMOS DRAM 8M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION T his is a fam ily of 8,388,608 x 8 bit Fast Page M ode CM O S DRAMs. Fast Page M ode offers high speed random access of m em ory cells w ithin the sam e row. Refresh cycle 4K Ref. or 8K Ref. , access tim e(-5 -6

Contextual Info: PRELIMINARY CMOS DRAM KM48V8000, KM48V8100 8M x 8 Bit CM O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,

Contextual Info: KM48V8000B, KM48V8100B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal or Low power) are

4MB DRAM

Abstract: 4MX16 1MX16
Contextual Info: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .

KM44C4000aS 6

Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6

Contextual Info: TABLE OF CONTENTS I. PRODUCT GUIDE 1. Introduction. 11 2. Product G u id e . 18 3. DRAM Ordering System. 23

KM48V8100CS

Contextual Info: KMM372V80 8 3CK/CS DRAM MODULE KMM372V80(8)3CK/CS Fast Page Mode 8Mx72 DRAM DIMM with ECC Using 8Mx8, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V80(8)3C is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372V80(8)3C consists of nine CMOS 8Mx8bits DRAMs

Contextual Info: KMM372V80 8 3BK/BS DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol Rating Unit VIN, VOUT VCC Tstg PD IOS -0.5 to +4.6

KM44C4105C-6

Abstract: KM44C16004
Contextual Info: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7

KM418C256

Abstract: KM48C2100AL KM416C254 KM44V4100AL KM44C1003
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE DRAM Density 1M bil Org. 1Mx1 Power Supply 5V±10% Part Number KM41C1000D# Speed(ns) 60/70/80 Features Fast Page 5V±10% KM44C256D# 60/70/80 Fast Page 4Mx1 5V±10% KM41C4000C# 50/60/70/80 Fast Page KM41C4002C# 60/70/80

1004CL

Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Contextual Info: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7