KM44C4000CS Search Results

Contextual Info: KMM372C804BS DRAM M ODULE Buffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 DRAM M ODULE KM M 3 7 2 C80 4B S Revision History Version 0.0 (Sept, 1 997) Removed two AC parameters t C A C P (a c c e s s time from CAS) and tA A P (a c c e s s time from c o l. addr.) in AC CHARACTERISTICS.

Contextual Info: KMM372C804BS DRAM MODULE KMM372C804BS Fast Page Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372C804B consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in

Contextual Info: KMM372C804CS DRAM MODULE Buffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM372C804CS KMM372C804CS DRAM MODULE

DQ69

Abstract: KMM372C400CK KMM372C400CS KMM372C410CK KMM372C410CS
Contextual Info: KMM372C400CK/CS KMM372C410CK/CS DRAM MODULE KMM372C400CK/CS & KMM372C410CK/CS with Fast Page Mode 4Mx72 DRAM DIMM with ECC using 4Mx4, 4K & 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C40 1 0C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung

Contextual Info: KMM372C400CK/CS K M M 3 7 2 C 4 1 OCK/ CS DRAM MODULE K M M 3 7 2 C 4 0 0 C K / C S & K MM3 72C 41 OCK/CS with Fast Page Mode 4Mx72 DRAM DIMM with ECC using 4Mx4, 4K & 2K Refresh, 5V FEATURES G E N E R A L DESCRI PTION The Sam sung KM M 372C40 1 0C is a 4M x72bits Dynamic

Contextual Info: KMM372C404BS DRAM M ODULE Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 DRAM M ODULE KM M 3 7 2 C40 4B S Revision History Version 0.0 (Sept, 1 997) Removed two AC parameters t C A C P (a c c e s s time from CAS) and tA A P (a c c e s s time from c o l. addr.) in AC CHARACTERISTICS.

KMM372C804BS

Contextual Info: KMM372C804BS DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol Rating Unit VIN, VOUT VCC Tstg PD IOS -1 to +7.0 -1 to +7.0

Contextual Info: KMM372C404BS DRAM MODULE KMM372C404BS Fast Page Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4 , 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C404B is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372C404B consists of four 4Mx16bits & two 4Mx4bits CMOS DRAMs in

KMM364C410CK

Abstract: KMM364C410CS
Contextual Info: KMM364C400CK/CS KMM364C410CK/CS DRAM MODULE KMM364C400CK/CS & KMM364C410CK/CS with Fast Page Mode 4Mx64 DRAM DIMM using 4Mx4, 4K & 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C40 1 0C is a 4Mx64bits Dynamic RAM high density memory module. The Samsung

Contextual Info: KMM372C404CS DRAM MODULE Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM372C404CS KMM372C404CS DRAM MODULE

MS3211

Contextual Info: KMM372C400CK/CS KMM372C410CK/CS DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol Rating Unit VIN, VOUT VCC Tstg PD IOS

Contextual Info: KMM372C804BS DRAM MODULE KMM372C804BS Fast Page Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372C804B consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in