KM41C4647 Search Results

KM41C464Z

Abstract: KM41C464P km41c464 KM41C464-10 KM41C464J km41c464-8 KM41C464-7 equivalent km41c4647 65536X4 ST ez 724
Contextual Info: CMOS DRAM KM41C464 6 4 K x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM41C464 is a CMOS high speed 65,536 b i t x 4 D ynam ic Random A cce ss M em ory. Its design is op tim ized fo r high perform ance a p p lica tio n s

Contextual Info: CMOS DRAM KM41C464 ABSOLUTE MAXIMUM RATINGS* Item Symbol Rating V |N, V ouT - 1 to + 7.0 V V oltage on VCc S upply Relative to VSs Vcc - 1 to + 7 .0 V S torage Tem perature V oltage on Any Pin Relative to V Ss Units Tstg - 55 to + 150 °c Power D issipation

KM41C464

Abstract: KM41C464-8 KM41C464P KM41C464Z
Contextual Info: CMOS DRAM KM41C464 6 4 K x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C464 Is a CMOS high speed 65,536 bit x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

KM41C464

Abstract: KM41C464-8 KM41C464-10 KM41C464-7 18PIN 51C259H-20 51C259HL-15 51C259HL-20 51C259L-15 51C259L-20
Contextual Info: 197 - 2 56 K A 4 s fi ît fi ¡SlSleffl CC TRAC max ns) CMOS Dynamic RAM (6 5 5 3 6 x 4 ) -s TRCY •in (ns) TCAD aiin (ns) TAH min (ns) TP min (ns) TYiCY ■in (ns) TDH min (ns) TRWC nin (ns) VDD or VCC I DD nax (V) (irA) 18P1N \ m m I DD STANDBY ( I S B / I SB2)

KM41C464

Abstract: KM41C464P
Contextual Info: CMOS DRAM KM41C464 6 4 K x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM41C464 is a CMOS high speed 65,536 b i t x 4 D ynam ic Random A cce ss Mem ory. Its design is op tim ized fo r high pe rform ance a p p lica tio n s