KM416V4104C Search Results
KM416V4104C Datasheets (13)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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KM416V4104C |
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4M x 16-Bit CMOS Dynamic RAM with Extended Data Out | Original | 821.45KB | 36 | ||
KM416V4104CS |
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KMM366F804CS1 8Mx64 DRAM Dimm Using 4Mx16,8K&4K Refresh,3.3V, Density(MB) = 64, Organization = 8Mx64, Mode = Edo, Refresh = 4K/64ms, Speed(ns) = 50,60, #of Pin = 168, Component Composition = (4Mx16)*8+EEPROM, Production Status = Eol, Comments = Unbuffered | Original | 461.97KB | 20 | ||
KM416V4104CS-45 |
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4M x 16-Bit CMOS Dynamic RAM with Extended Data Out | Original | 821.45KB | 36 | ||
KM416V4104CS-5 |
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4M x 16-Bit CMOS Dynamic RAM with Extended Data Out | Original | 821.45KB | 36 | ||
KM416V4104CS-50 |
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4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns | Original | 821.45KB | 36 | ||
KM416V4104CS-6 |
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4M x 16-Bit CMOS Dynamic RAM with Extended Data Out | Original | 821.45KB | 36 | ||
KM416V4104CS-60 |
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4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns | Original | 821.45KB | 36 | ||
KM416V4104CS-L45 |
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4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power | Original | 821.45KB | 36 | ||
KM416V4104CS-L-45 |
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4M x 16-Bit CMOS Dynamic RAM with Extended Data Out | Original | 821.45KB | 36 | ||
KM416V4104CS-L-5 |
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4M x 16-Bit CMOS Dynamic RAM with Extended Data Out | Original | 821.45KB | 36 | ||
KM416V4104CS-L50 |
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4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power | Original | 821.45KB | 36 | ||
KM416V4104CS-L-6 |
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4M x 16-Bit CMOS Dynamic RAM with Extended Data Out | Original | 821.45KB | 36 | ||
KM416V4104CS-L60 |
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4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power | Original | 821.45KB | 36 |
KM416V4104C Price and Stock
Samsung Semiconductor KM416V4104CS-L5 |
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KM416V4104CS-L5 | 14 |
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Samsung Semiconductor KM416V4104CS-5 |
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KM416V4104CS-5 | 6 |
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Samsung Semiconductor KM416V4104CS-6 |
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KM416V4104CS-6 | 2 |
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Samsung Electro-Mechanics KM416V4104CS-5IC,DRAM,EDO,4MX16,CMOS,TSOP,50PIN,PLASTIC |
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KM416V4104CS-5 | 22 |
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Samsung Electro-Mechanics KM416V4104CS-64M X 16 EDO DRAM, 60 NS, PDSO50 |
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KM416V4104CS-6 | 9 |
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KM416V4104C Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: KM416V4004C,KM416V4104C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal |
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KM416V4004C KM416V4104C 16bit 4Mx16 400mil | |
K and M ElectronicsContextual Info: KM416V4004C,KM416V4104C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal |
OCR Scan |
KM416V4004C KM416V4104C 16bit 4Mx16 400mil K and M Electronics | |
Contextual Info: KM416V4004C,KM416V4104C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 4,194,304 x 16 bit Extended Data O ut Mode CM OS DRAMs. Extended Data O ut Mode offers high speed random access of m em ory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access tim e (-45, -5 or -6), power consum ption(N orm al |
OCR Scan |
KM416V4004C KM416V4104C 16bit | |
KM416V4004C
Abstract: KM416V4104C
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KM416V4004C KM416V4104C 16bit 4Mx16 400mil KM416V4104C | |
Contextual Info: DRAM MODULE KMM372F404CS KMM372F404CS EDO Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F404C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F404C consists of four 4Mx16bits & two 4Mx4bits CMOS DRAMs in |
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KMM372F404CS KMM372F404CS 4Mx16 KMM372F404C 4Mx72bits 4Mx16bits 400mil 168-pin | |
Contextual Info: DRAM MODULE KMM374F804CS1 KMM374F804CS1 Fast EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F804CS1 is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F804CS1 consists of eight CMOS 4Mx16bits |
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KMM374F804CS1 KMM374F804CS1 4Mx16 8Mx72bits 4Mx16bits 400mil 300mil 168-pin | |
Contextual Info: DRAM MODULE KMM366F40 8 4CS1 KMM366F40(8)4CS1 EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40(8)4CS1 is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F40(8)4CS1 consists of four CMOS 4Mx16bits |
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KMM366F40 4Mx16, 4Mx64bits 4Mx16bits 400mil 168-pin | |
4CS1Contextual Info: DRAM MODULE KMM366F80 8 4CS1 KMM366F80(8)4CS1 EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F80(8)4CS1 is a 8Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F80(8)4CS1 consists of eight CMOS 4Mx16bits |
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KMM366F80 4Mx16, 8Mx64bits 4Mx16bits 400mil 168-pin 4CS1 | |
KM416VContextual Info: DRAM MODULE KMM374F404CS1 Unbuffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Dec. 1998 DRAM MODULE Revision History Version 0.0 (Dec. 1998) • The 4th. generation of 64Mb DRAM components are applied to this module. KMM374F404CS1 DRAM MODULE KMM374F404CS1 |
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KMM374F404CS1 4Mx72 4Mx16 KMM374F404CS1 4Mx72bits KM416V | |
Contextual Info: DRAM MODULE KMM466F804CS1-L KMM466F804CS1-L EDO Mode 8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F804CS1-L is a 8Mx64bits Dynamic RAM high density memory module. The • Part Identification |
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KMM466F804CS1-L KMM466F804CS1-L 4Mx16, 8Mx64bits cycles/128ms, 4Mx16bits 400mil | |
KMM372F804CSContextual Info: KMM372F804CS DRAM MODULE KMM372F804CS EDO Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F804C is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F804C consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in |
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KMM372F804CS KMM372F804CS 4Mx16 KMM372F804C 8Mx72bits 4Mx16bits 400mil 168-pin | |
KMM466F404CS2-LContextual Info: DRAM MODULE KMM466F404CS2-L KMM466F404CS2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F404CS2-L is a 4Mx64bits Dynamic RAM high density memory module. The • Part Identification |
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KMM466F404CS2-L KMM466F404CS2-L 4Mx16, 4Mx64bits cycles/128ms, 4Mx16bits 400mil |