KM416V4004C Search Results
KM416V4004C Datasheets (12)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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KM416V4004C |
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4M x 16-Bit CMOS Dynamic RAM with Extended Data Out | Original | 821.45KB | 36 | ||
KM416V4004CS-45 |
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4M x 16-Bit CMOS Dynamic RAM with Extended Data Out | Original | 821.45KB | 36 | ||
KM416V4004CS-5 |
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4M x 16-Bit CMOS Dynamic RAM with Extended Data Out | Original | 821.45KB | 36 | ||
KM416V4004CS-50 |
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4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns | Original | 821.45KB | 36 | ||
KM416V4004CS-6 |
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4M x 16-Bit CMOS Dynamic RAM with Extended Data Out | Original | 821.45KB | 36 | ||
KM416V4004CS-60 |
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4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns | Original | 821.45KB | 36 | ||
KM416V4004CS-L45 |
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4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power | Original | 821.45KB | 36 | ||
KM416V4004CS-L-45 |
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4M x 16-Bit CMOS Dynamic RAM with Extended Data Out | Original | 821.45KB | 36 | ||
KM416V4004CS-L-5 |
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4M x 16-Bit CMOS Dynamic RAM with Extended Data Out | Original | 821.45KB | 36 | ||
KM416V4004CS-L50 |
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4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power | Original | 821.45KB | 36 | ||
KM416V4004CS-L-6 |
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4M x 16-Bit CMOS Dynamic RAM with Extended Data Out | Original | 821.45KB | 36 | ||
KM416V4004CS-L60 |
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4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power | Original | 821.45KB | 36 |
KM416V4004C Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: KM416V4004C,KM416V4104C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal |
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KM416V4004C KM416V4104C 16bit 4Mx16 400mil | |
K and M ElectronicsContextual Info: KM416V4004C,KM416V4104C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal |
OCR Scan |
KM416V4004C KM416V4104C 16bit 4Mx16 400mil K and M Electronics | |
Contextual Info: KM416V4004C,KM416V4104C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 4,194,304 x 16 bit Extended Data O ut Mode CM OS DRAMs. Extended Data O ut Mode offers high speed random access of m em ory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access tim e (-45, -5 or -6), power consum ption(N orm al |
OCR Scan |
KM416V4004C KM416V4104C 16bit | |
KM416V4004C
Abstract: KM416V4104C
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KM416V4004C KM416V4104C 16bit 4Mx16 400mil KM416V4104C | |
Contextual Info: DRAM MODULE KMM366F40 8 4CS1 KMM366F40(8)4CS1 EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40(8)4CS1 is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F40(8)4CS1 consists of four CMOS 4Mx16bits |
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KMM366F40 4Mx16, 4Mx64bits 4Mx16bits 400mil 168-pin | |
4CS1Contextual Info: DRAM MODULE KMM366F80 8 4CS1 KMM366F80(8)4CS1 EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F80(8)4CS1 is a 8Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F80(8)4CS1 consists of eight CMOS 4Mx16bits |
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KMM366F80 4Mx16, 8Mx64bits 4Mx16bits 400mil 168-pin 4CS1 |