KM416S4030 Search Results

Contextual Info: KM416S4030B Preliminary CMOS SDRAM Revision History Revision ,l November 1997 •tRDL has changed 10ns to 12ns. •Binning -10 does not meet PC 100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. REV. 1 Nov. '97 ELECTRONICS

KM416S4030AT

Abstract: ZX-03 KM416S4030AT-G
Contextual Info: KM416S4030AT SDRAM ELECTRONICS 1M x 16Bitx 4 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • 4 banks operation. • MRS cycle with address key programs.

KM416S4030BT

Abstract: KM416S4030B
Contextual Info: KM416S4030B CMOS SDRAM Revision History Revision .1 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .2 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.

KM416S4030C

Contextual Info: KM416S4030C Preliminary CMOS SDRAM Revision History Revision 1 May 1998 - ICC2 N v a lu e (1 0 m A ) is c h a n g e d to 1 2 m A . Revision .2 (June 1998) - tSH (- 1 0 b in n in g ) is re v is e d . REV. 2 June '98 ELECTRONICS Preliminary CMOS SDRAM KM416S4030C

Contextual Info: SERIAL PRESENCE DETECT SDRAM MODULE PC100 Unbuffered SDRAM SODIMM 144pin SPD Specification REV. 1.50 November 1998 REV. 1.50 Nov. 1998 SERIAL PRESENCE DETECT SDRAM MODULE KMM464S424CT1-FH/FL •Organization : 4MX64 •Composition : 4MX16 *4 •Used component p a rt# : KM416S4030CT-FH/FL

KM416S4030C

Abstract: 1M Synchronous DRAM samsung
Contextual Info: KM416S4030C Preliminary PC133 CMOS SDRAM Revision History Revision 0.0 Oct., 1998 • PC133 first published. REV. 0 Oct. '98 Preliminary PC133 CMOS SDRAM KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM416S4030C is 67,108,864 bits synchronous high data

KM416S4030C

Contextual Info: KM416S4030C Preliminary CMOS SDRAM Revision History Revision 1 May 1998 - ICC2 N value (10mA) is changed to 12mA. Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 Preliminary CMOS SDRAM KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM

KM416S4030D

Contextual Info: KM416S4030D CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 May 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 May 1999 KM416S4030D CMOS SDRAM Revision History Revision 0.0 May 15, 1999

KM416S4030BT

Abstract: KM416S4030B KM416S4030
Contextual Info: Preliminary CMOS SDRAM KM416S4030B Revision History Revision .1 November 1997 •tRDL has changed 10ns to 12ns. •Binning -10 does not meet PC 100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. - 1 - ELECTRONICS This Material Copyrighted By Its Respective Manufacturer

KM416S4030A

Abstract: KM416S4030AT KM416S4030AT-G
Contextual Info: KM416S4030A CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES •• •• •• - GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs CAS Latency 2 & 3

Contextual Info: Preliminary CMOS SDRAM KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM416S403OC is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG'S high performance CMOS

KM416S4030BT

Contextual Info: KM416S4030B CMOS SDRAM Revision History Revision .1 N ovem ber 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not m eet PC100 characteristics . So AC param eter/C haracteristics have changed to 64M 2nd values. Revision .2 (February 1998) - Input leakage C urrents (Inputs / DQ) are changed.

Contextual Info: KM416S4030B CMOS SDRAM 1M x 16Bitx 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM416S4030B is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG’S high performance CMOS

KM416S4030BT

Abstract: KM416S4030B
Contextual Info: KM416S4030B CMOS SDRAM Revision History Revision .1 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .2 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.

KMM464S824CT1

Contextual Info: KMM464S824CT1 PC100 144pin SDRAM SODIMM Revision History Revision 0.1 May. 24, 1999 - Changed "Detail Y" in PCB Dimension. Rev.0.1 May 1999 KMM464S824CT1 PC100 144pin SDRAM SODIMM KMM464S824CT1 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

Contextual Info: KMM366S424DTS PC100 Unbuffered DIMM Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

sekisui 5760

Abstract: sis950 SiS chipset 486 SEAGATE st51080n Bt848KPF KSV884T4A1A-07 lad1 5vdc SiS chipset SiS301 kingmax usb flash drive
Contextual Info: SiS540 Super 7 2D/3D Ultra-AGPTM Single Chipset Content Figure .vi Table. vii

Contextual Info: KMM466S424BT 14 4pm S D R A M S O D I M M Revi si on Hi story Revision .3 March 1998 • Some Parameter values & Chracteristics of comp, level are changed as below : -In p u t leakage Currents (Inputs) : ± 5uA to ± 1uA. Input leakage Currents (I/O) : ± 5uA to ± 1.5uA.

Contextual Info: 144pin SDRAM SODIMM KMM466S824BT2 R e v is io n H is to ry Revision .2 March 1998 Som e Param eter values & C hracteristics of com p, level are changed as below : - Input leakage C urrents (Inputs) : ± 5uA to ± 1uA. Input leakage C urrents (I/O) : ± 5uA to ± 1,5uA.

Contextual Info: KMM366S824AT NEW JEDEC SDRAM MODULE KMM366S824AT SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S824AT is a 8M bit x 64 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung

KM416S4030A

Abstract: km416s4031 KM416S4030AT-G
Contextual Info: K M 4 16 S 4 0 3 1 AT SDRAM ELECTRONICS 1 M x 16Bitx 4 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • 4 banks operation. • MRS cycle with address key programs.

KMM366S424AT-G2

Abstract: circuit diagram for auto on off KMM366S424AT
Contextual Info: KMM366S424AT NEW JEDEC SDRAM MODULE KMM366S424AT SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S424AT is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: PC66 SDRAM MODULE KM M366S424CTF KMM366S424CTF SDRAM DIMM 4M x6 4 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous D RAM s with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S424CTF is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: KMM366S424BT PC100 SDR AM M O D U L E Re vis ion Hist ory Revision .0 February 1998 -Input leakage Currents (Inputs / DQ) of Component level are changed. llL(lnputs) : ± 5uA to ± 1uA, llL(DQ) : ± 5uA to ± 1.5uA. -C in to be measured at V DD = 3.3V, T a = 23°C, f = 1MHz, V REF =1,4V ± 200 mV.