KM23C8100 Search Results
KM23C8100 Datasheets (11)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| KM23C8100D-12 | Samsung Electronics | 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM | Original | 99.58KB | 4 | ||
| KM23C8100D-15 | Samsung Electronics | 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM | Original | 99.58KB | 4 | ||
| KM23C8100DET-10 | Samsung Electronics | 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM | Original | 73.39KB | 4 | ||
| KM23C8100DET-12 | Samsung Electronics | 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM | Original | 73.39KB | 4 | ||
| KM23C8100DET-15 | Samsung Electronics | 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM | Original | 73.39KB | 4 | ||
| KM23C8100DG-10 | Samsung Electronics | 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM | Original | 99.58KB | 4 | ||
| KM23C8100DG-12 | Samsung Electronics | 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM | Original | 99.58KB | 4 | ||
| KM23C8100DG-15 | Samsung Electronics | 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM | Original | 99.58KB | 4 | ||
| KM23C8100DT-10 | Samsung Electronics | 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM | Original | 73.39KB | 4 | ||
| KM23C8100DT-12 | Samsung Electronics | 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM | Original | 73.39KB | 4 | ||
| KM23C8100DT-15 | Samsung Electronics | 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM | Original | 73.39KB | 4 |
KM23C8100 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
23C8100DGContextual Info: KM23C8100D G CMOS MASK ROM 8M-Bit (1Mx8 512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 100ns(Max.) • Supply voltage : single +5V • C urrent consumption |
OCR Scan |
km23c8100d512kx16100ns42-dip-600+4 | |
E5exContextual Info: KM23C8100CET CMOS Mask ROM ELECTRONICS 8M-Bit 1 M X 8/512 K x 16 M-ROM(Extended Temperature Product) • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16(word mode) • Fast access time : 120ns(max.) • Supply voltage : single +5V • Current consumption |
OCR Scan |
km23c8100cet120ns44-tsqp2-400576x8bit+2 | |
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Contextual Info: KM23C8100AFP2 CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le o rg a n iza tio n 1 ,0 4 8 ,5 7 6 x 8 (b y te m o d e ) The KM23C8100AFP2 is a fully static mask programma ble ROM fabricated using silicon gate CMOS process |
OCR Scan |
km23c8100afp2150ns | |
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Contextual Info: PRELIMINARY CMOS MASK ROM KM23C8100H 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 100ns (max.) • Supply voltage: single + 5 V |
OCR Scan |
km23c8100h100ns42-pin44-pin+1 | |
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Contextual Info: KM23C8100D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption |
Original |
km23c8100d/512kx16100ns44-tsop2-400 | |
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Contextual Info: CMOS MASK ROM KM23C8100FP2 8M-BH 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption |
OCR Scan |
km23c8100fp2150ns64-pinkm23c81oofp2 | |
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Contextual Info: KM23C8100AFP1 CMOS MASK ROM 8M-BH 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le o rg a n iza tio n The KM23C8100AFP1 is a fully static mask programma ble ROM fabricated using silicon gate CMOS process technology, and is organized either as 1 ,0 4 8 ,5 7 6 X 8 bit |
OCR Scan |
km23c8100afp1 | |
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Contextual Info: SAMSUNG ELECTRONICS INC 4EE D B 7^4142 KM23C8100 GDlllb? 3 B S M 6 K CMOS MASK ROM 8M-Bit 1M X 8 /5 12K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.) |
OCR Scan |
km23c8100150ns42-pin44-pin | |
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Contextual Info: KM23C8100FP1 CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES Sw itchable organization 1,048,576 X B (byte mode) 524,288 x 16 (word mode) Fast access time: 150ns (max.) Supply voltage: single + 5V C urrent consumption O perating: 50m A (max.) |
OCR Scan |
km23c8100fp1150ns44-pin | |
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Contextual Info: KM23C8100A CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1 ,0 4 8 ,5 7 6 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5V • C urrent consumption |
OCR Scan |
km23c8100a150ns42-pin44-pin+2 | |
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Contextual Info: PRELIMINARY CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • The KM23C8100HFP1 is a fully static mask program m a ble ROM fabricated using s ilic o n gate CMOS process technology, and is organized either as 1 ,0 4 8 ,5 7 6 X 8 bit |
OCR Scan |
100nskm23c8100hfp1km23c81ooh | |
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Contextual Info: PRELIMINARY KM23C8100HFP2 ^ CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itchable organization 1,048,576 X 6 (byte mode) 524,288 X 16 (word mode) • Fast access time: 100ns (max.) • Supply voltage: single + 5V |
OCR Scan |
km23c8100hfp2100ns64-pinkm23c81ooh | |
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Contextual Info: SAM S UN G E L E C T R O N I C S INC 45E 1 7^4142 KM23C8100FP1 0011171 S CMOS MASK ROM ÒM-Bit 1M X 8 / 5 1 2 K X 16) CMOS MASK ROM FEATURES S witchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) Fast access time: 150ns (max.) Supply voltage: single + 5V |
OCR Scan |
km23c8100fp1150ns44-pin8100fp+2 | |
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Contextual Info: CMOS MASK ROM KM23C8100A 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le o rg a n iz a tio n The KM23C8100A is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1 ,0 4 8 ,5 7 6 X 8 bit |
OCR Scan |
km23c8100a50piakm23c8100ag | |
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FA5AContextual Info: PRELIMINARY KM23C8100H CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Swilchable organization 1,048,576 x B (byte mode) 524,288 x 16 (word mode) • Fast access time: 100ns (max.) • Supply voltage: single + 5V |
OCR Scan |
km23c8100h100ns42-pin44-pin+3 | |
sop34Contextual Info: KM23C8100D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption |
Original |
km23c8100d/512kx16100ns42-dip-600+4 | |
T-15Contextual Info: KM23C8100D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption |
Original |
km23c8100d/512kx16100ns44-tsop2-400+1 | |
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Contextual Info: PRELIMINARY KM23C8100HFP1 CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 100ns (max.) • Supply voltage: single 5V |
OCR Scan |
km23c8100hfp1100ns44-pin | |
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Contextual Info: KM23C8100AFP1 CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES • S w itc h a b le o rg a n iz a tio n 1 ,0 4 8 ,5 7 6 x 8 (b y te m o d e ) 5 2 4 ,2 8 8 x 16 (w o rd m o d e ) • F a s t a c c e s s tim e : 150 n s im a x ) • S u p p ly v o lta g e : s in g le *t-5V |
OCR Scan |
km23c8100afp123c8100afp1b100afp1-20km23c8100afh-25 | |
KM23C81Contextual Info: KM23C8100 CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 5 2 4 ,2 8 8 x 1 6 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption |
OCR Scan |
km23c8100150ns50jja42-pin+3 | |
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Contextual Info: KM23C8100AFP2 CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le o rg a n iza tio n The KM23C8100AFP2 is a fully sta tic mask program m a ble ROM fab ricate d using s ilic o n gate CMOS process technology, and is organized either as 1 ,0 4 8 ,5 7 6 X 8 bit |
OCR Scan |
km23c8100afp2 | |
c3s3
Abstract: 23c8100
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OCR Scan |
km23c8100d/512kx16100ns42-dip-600+6 | |
44-TSOP2-400
Abstract: T-15 44-TSOP2
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Original |
km23c8100d/512kx16100ns44-tsop2-400+2 | |
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Contextual Info: KM23C8100D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption |
Original |
km23c8100d/512kx16100ns42-dip-600+2 | |