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    KM23C8100 Search Results

    KM23C8100 Datasheets (11)

    Samsung Electronics
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    KM23C8100D-12
    Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF 99.58KB 4
    KM23C8100D-15
    Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF 99.58KB 4
    KM23C8100DET-10
    Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF 73.39KB 4
    KM23C8100DET-12
    Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF 73.39KB 4
    KM23C8100DET-15
    Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF 73.39KB 4
    KM23C8100DG-10
    Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF 99.58KB 4
    KM23C8100DG-12
    Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF 99.58KB 4
    KM23C8100DG-15
    Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF 99.58KB 4
    KM23C8100DT-10
    Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF 73.39KB 4
    KM23C8100DT-12
    Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF 73.39KB 4
    KM23C8100DT-15
    Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF 73.39KB 4

    KM23C8100 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    23C8100DG

    Contextual Info: KM23C8100D G CMOS MASK ROM 8M-Bit (1Mx8 512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 100ns(Max.) • Supply voltage : single +5V • C urrent consumption


    OCR Scan
    km23c8100d512kx16100ns42-dip-600+423c8100dg44-sqp-60023c8100dkm23c81 PDF

    E5ex

    Contextual Info: KM23C8100CET CMOS Mask ROM ELECTRONICS 8M-Bit 1 M X 8/512 K x 16 M-ROM(Extended Temperature Product) • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16(word mode) • Fast access time : 120ns(max.) • Supply voltage : single +5V • Current consumption


    OCR Scan
    km23c8100cet120ns44-tsqp2-400576x8bit+2288x16bite5ex PDF

    Contextual Info: KM23C8100AFP2 CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le o rg a n iza tio n 1 ,0 4 8 ,5 7 6 x 8 (b y te m o d e ) The KM23C8100AFP2 is a fully static mask programma­ ble ROM fabricated using silicon gate CMOS process


    OCR Scan
    km23c8100afp2150ns PDF

    Contextual Info: PRELIMINARY CMOS MASK ROM KM23C8100H 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 100ns (max.) • Supply voltage: single + 5 V


    OCR Scan
    km23c8100h100ns42-pin44-pin+1km23c8100hg PDF

    Contextual Info: KM23C8100D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption


    Original
    km23c8100d/512kx16100ns44-tsop2-400 PDF

    Contextual Info: CMOS MASK ROM KM23C8100FP2 8M-BH 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption


    OCR Scan
    km23c8100fp2150ns64-pinkm23c81oofp2 PDF

    Contextual Info: KM23C8100AFP1 CMOS MASK ROM 8M-BH 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le o rg a n iza tio n The KM23C8100AFP1 is a fully static mask programma­ ble ROM fabricated using silicon gate CMOS process technology, and is organized either as 1 ,0 4 8 ,5 7 6 X 8 bit


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    km23c8100afp1 PDF

    Contextual Info: SAMSUNG ELECTRONICS INC 4EE D B 7^4142 KM23C8100 GDlllb? 3 B S M 6 K CMOS MASK ROM 8M-Bit 1M X 8 /5 12K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.)


    OCR Scan
    km23c8100150ns42-pin44-pin PDF

    Contextual Info: KM23C8100FP1 CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES Sw itchable organization 1,048,576 X B (byte mode) 524,288 x 16 (word mode) Fast access time: 150ns (max.) Supply voltage: single + 5V C urrent consumption O perating: 50m A (max.)


    OCR Scan
    km23c8100fp1150ns44-pin PDF

    Contextual Info: KM23C8100A CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1 ,0 4 8 ,5 7 6 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5V • C urrent consumption


    OCR Scan
    km23c8100a150ns42-pin44-pin+2km23c01ooakm23c8100ag PDF

    Contextual Info: PRELIMINARY CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • The KM23C8100HFP1 is a fully static mask program m a­ ble ROM fabricated using s ilic o n gate CMOS process technology, and is organized either as 1 ,0 4 8 ,5 7 6 X 8 bit


    OCR Scan
    100nskm23c8100hfp1km23c81ooh PDF

    Contextual Info: PRELIMINARY KM23C8100HFP2 ^ CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itchable organization 1,048,576 X 6 (byte mode) 524,288 X 16 (word mode) • Fast access time: 100ns (max.) • Supply voltage: single + 5V


    OCR Scan
    km23c8100hfp2100ns64-pinkm23c81ooh PDF

    Contextual Info: SAM S UN G E L E C T R O N I C S INC 45E 1 7^4142 KM23C8100FP1 0011171 S CMOS MASK ROM ÒM-Bit 1M X 8 / 5 1 2 K X 16) CMOS MASK ROM FEATURES S witchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) Fast access time: 150ns (max.) Supply voltage: single + 5V


    OCR Scan
    km23c8100fp1150ns44-pin8100fp+2dg1117423c8100fp1 PDF

    Contextual Info: CMOS MASK ROM KM23C8100A 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le o rg a n iz a tio n The KM23C8100A is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1 ,0 4 8 ,5 7 6 X 8 bit


    OCR Scan
    km23c8100a50piakm23c8100ag PDF

    FA5A

    Contextual Info: PRELIMINARY KM23C8100H CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Swilchable organization 1,048,576 x B (byte mode) 524,288 x 16 (word mode) • Fast access time: 100ns (max.) • Supply voltage: single + 5V


    OCR Scan
    km23c8100h100ns42-pin44-pin+3si58srkm23c8100hgfa5a PDF

    sop34

    Contextual Info: KM23C8100D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption


    Original
    km23c8100d/512kx16100ns42-dip-600+4km23c8100dg44-sop-600200maxsop34 PDF

    T-15

    Contextual Info: KM23C8100D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption


    Original
    km23c8100d/512kx16100ns44-tsop2-400+1t-15 PDF

    Contextual Info: PRELIMINARY KM23C8100HFP1 CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 100ns (max.) • Supply voltage: single 5V


    OCR Scan
    km23c8100hfp1100ns44-pin PDF

    Contextual Info: KM23C8100AFP1 CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES • S w itc h a b le o rg a n iz a tio n 1 ,0 4 8 ,5 7 6 x 8 (b y te m o d e ) 5 2 4 ,2 8 8 x 16 (w o rd m o d e ) • F a s t a c c e s s tim e : 150 n s im a x ) • S u p p ly v o lta g e : s in g le *t-5V


    OCR Scan
    km23c8100afp123c8100afp1b100afp1-20km23c8100afh-25 PDF

    KM23C81

    Contextual Info: KM23C8100 CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 5 2 4 ,2 8 8 x 1 6 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption


    OCR Scan
    km23c8100150ns50jja42-pin+344-pinkm23c8100gkm23c81 PDF

    Contextual Info: KM23C8100AFP2 CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le o rg a n iza tio n The KM23C8100AFP2 is a fully sta tic mask program m a­ ble ROM fab ricate d using s ilic o n gate CMOS process technology, and is organized either as 1 ,0 4 8 ,5 7 6 X 8 bit


    OCR Scan
    km23c8100afp2 PDF

    c3s3

    Abstract: 23c8100
    Contextual Info: KM23C8100D G CMOS MASK ROM 8M-Bit (1Mx8 /512KX16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1.040.576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption


    OCR Scan
    km23c8100d/512kx16100ns42-dip-600+6km23c8100dg44-sop-6qokm23c81100pfc3s323c8100 PDF

    44-TSOP2-400

    Abstract: T-15 44-TSOP2
    Contextual Info: KM23C8100D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption


    Original
    km23c8100d/512kx16100ns44-tsop2-400+2t-1544-tsop2 PDF

    Contextual Info: KM23C8100D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption


    Original
    km23c8100d/512kx16100ns42-dip-600+2km23c8100dg44-sop-600 PDF