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    KM23C8000D Search Results

    KM23C8000D Datasheets (5)

    Samsung Electronics
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    KM23C8000D-10
    Samsung Electronics 8M-Bit (1Mx8) CMOS MASK ROM Original PDF 89.28KB 4
    KM23C8000D-12
    Samsung Electronics 8M-Bit (1Mx8) CMOS MASK ROM Original PDF 89.28KB 4
    KM23C8000D-15
    Samsung Electronics 8M-Bit (1Mx8) CMOS MASK ROM Original PDF 89.28KB 4
    KM23C8000DG-10
    Samsung Electronics 8M-Bit (1Mx8) CMOS MASK ROM Original PDF 89.28KB 4
    KM23C8000DG-12
    Samsung Electronics 8M-Bit (1Mx8) CMOS MASK ROM Original PDF 89.28KB 4

    KM23C8000D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: CMOS MASK ROM KM23C8000D G 8M-Bit (1 Mx8) CMOS MASK ROM GENERAL DESCRIPTION FEATURES 1,0 48,576 x 8 bit org an izatio n Fast access tim e :1 0 0 n s (m a x .) S up ply vo lta g e : sin gle +5V C u rrent con sum p tion O perating : 50m A (m ax.) S ta n d b y


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    km23c8000d PDF

    mask rom

    Contextual Info: KM23C8000D G CMOS MASK ROM 8M-Bit (1Mx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION . . . . The KM23C8Q00D(G) is a fully static mask programmable ROM organized 1,048,576 x 8 bit. It is fabricated using silicon gate CMOS process technology. This device operates with a 5V single power supply, and all


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    km23c8000d100nsip-600km23c8000dg+432-sop-525km23c8q00d100pfmask rom PDF

    Contextual Info: KM23C8000D G CMOS MASK ROM 8M-Bit (1Mx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • 1,048,576 x 8 bit organization Fast access time : 100ns(Max.) Supply voltage : single +5V Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)


    Original
    km23c8000d100ns32-dip-600km23c8000dg+332-sop-525118max822max PDF

    32-SOP-525

    Contextual Info: KM23C8000D G CMOS MASK ROM 8M-Bit (1Mx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 1,048,576 x 8 bit organization • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)


    Original
    km23c8000d100ns32-dip-600km23c8000dg+132-sop-525 PDF

    MQ4A

    Abstract: 32-SO
    Contextual Info: KM23C8000D G CMOS MASK ROM 8M-Bit (1Mx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM 23C8000D(G) is • • • • 1,048,576 x 8 bit organization Fast access tim e : 100ns(M ax.) Supply voltage : single +5V Current consumption Operating : 50mA(Max.)


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    km23c8000d100ns23c8000d32-dip-600+423c8000dg32-sop-525mq4a PDF

    Contextual Info: KM23C8000P G CMOS MASK ROM 8M-Bit (1Mx8) CMOS M ASK ROM FEATURES G EN ERA L DESCRIPTION • 1,048,576 x 8 bit organization • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption Operating: 50mA(Max.) Standby : 50fiA(Max.)


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    km23c8000p100ns50fiakm23c8000d+432-dip-6008000d32-sop-525100pf PDF

    Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Introduction . 11 2. Product Guide . 14 3. Ordering Information . 16


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    km23c4000dkm23c4100dkm23c41km23v64000t+4km23v64005agkm23v64005atykm23v64205asgkm23sv32205t PDF

    48TSOP1

    Abstract: MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12
    Contextual Info: MEMORY ICs 1. FUNCTION GUIDE INTRODUCTION 4M bit \ KM23C400QD G -8 512KX8 [- 1 KM23C4QOOD(G)-10 KM23C40QQD(E)TY-8 \ |— KM23C4Q00D(G)-12 ]- 1 KM23C4Q00D(E)'TY-10 |- 1 KM23C4000D(E)7Y-12 — [ KM23V4000D(E)TY-10 |- 1 KM23V4000D{E)TY-12 |-j KM23V4000D(E)TY-15


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    512kx8km23c400qdkm23c4qoodkm23c4q00d+12km23c40qqdty-10km23c4000d7y-12km23v4000d48tsop1mx* 64m-bit epromty15km23c32000cg-1023v322km23c16205bsg-107y12 PDF