KM CAPACITOR Search Results

KM-10DF

Abstract: KM-10DB KM-10DG 3km1
Contextual Info: Filter Coils < Pin Type: KM Series> Type: KM-10DB, KM-10DF, KM-10DG ◆ Product Description ・11.0x11.0mm Max. L×W , 16.0mm Max. Height (KM-10DB), ・10.5×10.5mm Max.(L×W), 16.0mm Max. Height (KM-10DF, KM-10DG), ・Operating frequency:1.0MHz. ・In addition to the reference versions of parameters shown here,

receiver sm 1310

Abstract: IEC-825 OC-24 1000BASE-LX receiver sm 1310 fiber
Contextual Info: DTR-1250-3.3-SM 3.3 V 1x9 Gigabit Ethernet 1300 & 1550 nm Laser Transceivers Features þ Compliant with IEEE 802.3z Draft D5.0 1000BASE-LX specifications for Gigabit Ethernet þ Distance options of 10 km, 25 km, 40 km and 70 km using DFB lasers also available

fabry perot 155

Abstract: 1000BASE-LX IEC-825 DTR-1250-SM
Contextual Info: DTR-1250-3.3-SM 3.3 V 1x9 Gigabit Ethernet 1300 & 1550 nm Laser Transceivers Features þ Compliant with IEEE 802.3z Draft D5.0 1000BASE-LX specifications for Gigabit Ethernet þ Distance options of 10 km, 25 km, 40 km and 70 km using DFB lasers also available

D 1062 transistor

Abstract: DTR-1062-MM IEC-825
Contextual Info: DTR-1062-SM 1.062 Gbaud Fibre Channel Longwave Transceiver Features þ Compliant with Fiber Channel ANSI specifications for 1.062 Gbaud þ Long Distance 10 km as well as Intermediate Distance (2 km) þ Exended distance options of over 25 km and over 40 km using DFB lasers also available

D 1062 transistor

Abstract: IEC-825
Contextual Info: DTR-1062-3.3-SM 3.3 Volt 1.062 Gbaud Fibre Channel Longwave Transceiver Features þ Compliant with Fiber Channel ANSI specifications for 1.062 Gbaud þ Long Distance 10 km as well as Intermediate Distance (2 km) þ Exended distance options of over 25 km and

Contextual Info: FILM CAPACITORS ahP ALUMINUM ELECTROLYTIC CAPACITORS KM RADIAL SERIES INTRODUCTION KM Series Radial Lead Aluminum Electrolytic capacitors cover a wide range of values, voltages and temperatures. These capacitors are suitable for industrial and commercial designs requiring

D 1062 transistor

Abstract: D 1062 DTR-1062-SM-LC-LL-E DTR-1062-SM-LC-LL-I DTR-1062-SM-LC-LL-L DTR-1062-SM-LC-LL-U DTR-1062-SM-LS-LL-I DTR-1062-SM-LS-LL-L IEC-825
Contextual Info: OCP ' DTR-1062-SM-LC & DTR-1062-SM-LS 3.3V LC connector SFF 1.062 Gbd Fibre Channel Longwave Transceivers Features þ Compliant with Fiber Channel ANSI specifications for 1.062 Gbaud þ Long Distance 10 km as well as Intermediate Distance (2 km) þ Exended distance options of over 25 km and

365 pF

Abstract: ETAH
Contextual Info: KM 311 KM 21 CONDENSATEURS POLYCARBONATE METALLISE METALLIZED POLYCARBONATE CAPACITORS D-electnque CARACTERISTIQUES GENERALES .'V'.-"-'-' , j C it GENERAL CHARACTERISTICS Tem péia!ure d'utilisation s'ecnnolog r-or -nducti Tg à 1 sH z J h 1' upOXy pour C ;:

DTR-1062-SM-LC-LL-E

Abstract: DTR-1062-SM-LC-LL-I DTR-1062-SM-LC-LL-L DTR-1062-SM-LC-LL-U DTR-1062-SM-LS-LL-I DTR-1062-SM-LS-LL-L IEC-825
Contextual Info: OCP DTR-1062-SM-LC & DTR-1062-SM-LS 3.3V LC connector SFF 1.062 Gbd Fibre Channel Longwave Transceivers Features þ Compliant with Fiber Channel ANSI specifications for 1.062 Gbaud þ Long Distance 10 km as well as Intermediate Distance (2 km) þ Exended distance options of over 25 km and

Contextual Info: KM 78 - 78 R - 78 RS KM 82 - 82 R - 82 RS CONDENSATEURS POLYCARBONATE METALLISE METALLIZED POLYCARBONATE CAPACITORS Diéiecrriqi/e CARACTERISTIQUES GENERALES_ GENERAL CHARACTERISTICS -5 5 C +125 C Température d'utilisation Operating emperat ure C 20 10 4

KMM581000An-8

Contextual Info: DRAM MODULES KMM581000AN 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 581000A N consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package

Contextual Info: DRAM MODULES KMM584000A 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 584000A consist of eight KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy

DTR-156-SM2-LC-L3-IR-ME

Abstract: IR 0251 DTR-156-SM2-LC-L3-IR-E DTR-156-SM2-LC-L0-LR1 DTR-156-SM2-LC-L0-LR2 DTR-156-SM2-LC-L3-IR IEC-825 fm transmitter 10 KM fm transmitter 40 KM 12 km fm transmitter circuit
Contextual Info: OCP DTR-xxx-SM2-LC & DTR-xxx-SM2-LS 3.3 Volt 2x10 LC connector OC-3 & OC-12 Single Mode Transceivers Features þ Designed for ATM/SONET/SDH OC-3 156 Mb/s & OC-12 (622 Mb/s) þ Long Reach 1310 nm (40 km distance) and 1550 nm (80 km) as well as Intermediate Reach (15 km)

DTR-156-SM-LS-L3-IR-MSE

Abstract: DTR-156-SM-LS-A-L3-IR-MS DTR-156-SM-LC-A-L3-IR-MSE DTR-156-SM-LS-A-L3-IR-MSE DTR-156-SM-LS-L3-IR-ME DTR-156-SM-LC-A-L3-IR-ME DTR-156-SM-LC-L3-IR-M DTR-156-SM-LC-L0-LR1-M DTR-156-SM-LC-L0-LR2-M DTR-156-SM-LC-L3-IR-ME
Contextual Info: OCP DTR-xxx-SM-LC & DTR-xxx-SM-LS 3.3 Volt 2x5 LC connector OC-3 & OC-12 Single Mode Transceivers Features þ Designed for ATM/SONET/SDH OC-3 156 Mb/s & OC-12 (622 Mb/s) þ Long Reach 1310 nm (40 km distance) and 1550 nm (80 km) as well as Intermediate Reach (15 km)

Contextual Info: Y A§-¥A ALUMINUM ELECTROLYTIC CAPACITORS KM R AD IA L S E R IE S INTRODUCTION KM Series Radial Lead Aluminum Electrolytic capacitors cover a wide range of values, voltages and temperatures. These capacitors are suitable for industrial and commercial designs requiring continuous duty applications. These

bauart gepruft

Abstract: AFCT-57R5APZ AVAGO afbr laser transmitter circuit diagram 4.20 mA Transmitter laser diode FP TO for SFP pi metal detector AFBR-57R5APZ AFBR-59R5LZ AFCT-57R5ATPZ
Contextual Info: AFCT-57R5APZ SFP, 1310 nm, 4 km, LC Connector, Pluggable Fibre Channel 4.25/2.125/1.0625 GBd Data Sheet 1310 nm, 4 km, SFP Small Form Pluggable , Low Voltage (3.3 V) Digital Diagnostic Optical Transceiver Description The AFCT-57R5APZ optical transceiver supports

pin diode tda 1053

Contextual Info: AFCT-57R5ATPZ SFP, 1310 nm, 10 km, LC Connector, Pluggable Fibre Channel 4.25/2.125/1.0625 GBd Data Sheet 1310 nm, 10 km, SFP Small Form Pluggable , Low Voltage (3.3 V) Digital Diagnostic Optical Transceiver Description The AFCT-57R5ATPZ optical transceiver supports

3.96 Card Edge Connectors

Abstract: TOSA for SFP laser 850 nm DFB laser drivers bauart gepruft dj 801 RH 2D 1002 amplitude modulation transmitter circuit diagram LC pin rosa 10 4.20 mA Transmitter
Contextual Info: AFCT-57R5ATPZ SFP, 1310 nm, 10 km, LC Connector, Pluggable Fibre Channel 4.25/2.125/1.0625 GBd Data Sheet 1310 nm, 10 km, SFP Small Form Pluggable , Low Voltage (3.3 V) Digital Diagnostic Optical Transceiver Description The AFCT-57R5ATPZ optical transceiver supports

KMM5322000BV

Contextual Info: SAMSUNG ELECTRONICS INC b?E ]> • 7^4142 KMM5322000BV/BVG GG1S1SÔ 24S I SM6 K DRAM MODULES 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • I rac tcAC KM M5322000BV-6 60ns 15ns KM M5322000B V'7

Contextual Info: DRAM MODULE KM M372V225A J KMM372V225AJ Fast Page Mode 2Mx72 DRAM DIMM with QCAS, 1K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung KM M 372V225A is a 2M bit x 72 D ynam ic RAM high density m em ory module. The KMM372V225A - 6

Contextual Info: SAMSUNG ELECTRONICS 42E INC D 7Tb4142 KMM536200GA DG1QS34 T • SMGK DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • tRA C tC A C tR C KM M 5362000A- 7 70ns 20ns 130ns KM M 5362000A- 8

km416c1200aj

Abstract: KM416C1200A
Contextual Info: DRAM MODULE KM M5322200A W/AW G KMM5322200AW/AWG Fast Page Mode 2Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322200AW is a 2M bit x 32 D ynamic RAM high density m em ory module. The Samsung KM M 5322200AW consists of four CMOS

KMM536256

Contextual Info: KMM536256B DRAM MODULES 2 5 6 K X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 536256B is a 2 6 2 ,1 4 4 bit X 36 Dynamic RAM high density memory module. The Sam­ sung KM M 536256B consist ot eight CMOS 2 5 6 K X 4

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7^4142 KMM5361000A/AG Q014Sh4 SfiS « S M G K DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 5361000A is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KM M 5361000A consist of eight CMOS 1 M X 4 bit