KL3N Search Results

Contextual Info: KL SMD TSS KL SERIES OUTLINE DIMENSIONS KL3N14 2.0 2.5 ±0.3 1.5 ±0.2 14 140V30A 64 Package : 1F ロット記号（例） 品名 クラス（略号） 2.0 4.2 ソルダリングパッドの参考パターン 1.2 ±0.3 1.2 ±0.3 0.1±0.1 2.0 ±0.3 0.2 0.9

Contextual Info: Surge Absorbers Transient Surge Suppressors [F eatures] 1. Bidirectional or uni-directional characteristics ' ^ switchboards 3. Large surge current capacity 4. Repeated use against surges is possible. KA3Z07 18 KA10R25 KL3Z07 18 ☆KL3L07 KL3N14 KL3R20 KP4L07

KL3N14

Contextual Info: SHINDENGEN TSS KL Series SMT OUTLINE DIMENSIONS KL3N14 Case : 1F Unit : mm RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Maximum Off-State Voltage Surge On-State Current Conditions Symbol Tstg Tj VDRM I TSM 10/1000Ês, Non-repetitive

Contextual Info: 電流制御型 KL シリーズ 面実装品（SMD） TSS KL SERIES •外形寸法図 OUTLINE DIMENSIONS KL3N14 2.0 2.5 ±0.3 64 14 140V30A 1.5 ±0.2 Package : 1F ロット記号（例） 品名 クラス（略号） 2.0 4.2 ソルダリングパッドの参考パターン

Contextual Info: SMD CSSPD KL SERIES K L ìs 'J -X • OUTLINE DIMENSIONS KL3N14 24 4.2 ■ RATINGS Absolute Maximum Ratings Electrical Characteristics Breakover V o lta g e V B0 O ff-S ta te C urre nt Idrm H o lding C urre nt IH O n -S ta te V o lta g e VT J u n c tio n C a p a c ita n c e

KL3N14

Abstract: U181 MARKING KL
Contextual Info: 電流制御型 KL シリーズ 面実装品（SMD） TSS KL SERIES •外形寸法図 OUTLINE DIMENSIONS KL3N14 2.0 2.5 ±0.3 64 14 140V30A 1.5 ±0.2 Package : 1F ロット記号（例） 品名 クラス（略号） 2.0 4.2 ソルダリングパッドの参考パターン

KL3N14

Abstract: SMD Transistor 1f
Contextual Info: SHINDENGEN TSS KL Series KL3N14 SMD OUTLINE DIMENSIONS Case : 1F Unit : mm RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Maximum Off-State Voltage Surge On-State Current Conditions Symbol Tstg Tj VDRM ITSM 10/1000 s, Non-repetitive

7555-T

Abstract: M1FM3
Contextual Info: Al t hough we ar e cons t ant l ymak i ng ev er yef f or tt oi mpr ov et he qual i t yand r el i abi l i t yofourpr oduct s ,t her enev er t hel es sr emai nsacer t ai npr obabi l i t yt hatt he s emi conduct orpr oduct smayoccas i onal l yf ai lormal f unct

4N12

Contextual Info: Su rface-M o un t Devices V a r is t o r s 1F Absolute Maximum Ratings Electrical C haracteristics Ta = 25X5 Outline If Ifsm Tstg T¡ Vf i If i VPS If 2 VPS IFS [m A ] [A ] [•c] [•c] [V ] [m A ] [V ] [m A ] [V ] [m A ] Package Fig. 370 7 .5 150 2 .3 + 0 .25

D1FS4N

Abstract: G1VL8 KP4F12 D3FJ10 KL3Z18 K1VP24 1000cy DL04-18F1 KU4F8 smd 1f
Contextual Info: Ref. No. 84-119e November 13, 2006 Messrs. Request for Acceleration of Switching the Plating Type for Two-Terminal SMD Diodes Dear Valued Customer, We asked our customers the switching to Sn plating in our letter dated July 7, 2005 Ref. No. 83-033 and, thanks to your cooperation, the progress of the transition is much faster than expected.

1.5KE400P

Abstract: 3A143 P6KE400P SMA4T39 P6KE39CP P6KE200A equivalent tvs505 equivalent TTS144 P6KE27P P6KE12CP
Contextual Info: CROSS REFERENCE PROTECTION DEVICES INDUSTRY STANDARD 1SMA5.0AT3 ↓ 1SMA78AT3 1SMB5.0AT3 ↓ 1SMB170AT3 1SMB5.0CAT3 ↓ 1SMB78CAT3 1SMC5.0AT3 ↓ 1SMC78AT3 1.0KE5.0,A ↓ 1.0KE170P,A 1.0KE5.0C,CA ↓ 1.0KE170C,CA 1.2KE5.0,A ↓ 1.2KE170,A 1.2KE5.0C,CA ↓

40125

Abstract: UL497B KL3L07 KL3LU08 KL3N14 KL3R20 KL3Z07 KP10L06 KP10LU07 KP10N14
Contextual Info: 1F • Absolute Maximum Ratings 1Y Electrical Characteristics Ta=25°C Outline If Type No. . ÍFSM Tj Vfi If i V f? lF2 V f3 lF3 [V ] [m A ] [V ] [m A ] [V ] [m A ] 2 .3 + 0.25 I 2.75 ± 0 .2 5 I0 3 . 1+ 0 .2 5 [A ] [*C ] [• c ] ☆ V R 6 1 F 1 *' 370

shindengen m

Abstract: Thyristor diodes
Contextual Info: Shindengen’s Silicon Surge Protective Devices SSPD r KU, KL seriesj are a new generation of solid state arrester in response to the needs of sophisticated telecommunications society. With a PNPN structure, the r KU, KL seriesj perform a characteristics like bidirectional thyristor diodes for use

10L08

Abstract: KT15R
Contextual Info: Surge Absorbers Thyristor Surge Suppressors [F e a tu re s ] 1. Bidirectional or uni-directional characteristics 2. High speed response 3. Large surge current capacity 4. R epeated use a gainst surges is possible. [A p p lica tio n s] 1. Lightning surge adsorption fo r com m unications circuits

ST03D200

Abstract: ST03D 55 ST02D-200 KU5R29N ST03D170 M67145 ST03D 65 st02d200
Contextual Info: Surge Absorbers AX06 Absolute Maximum Ratings Type No. P r*w . . |W| Tstg . ! ‘ :l Tj . AX 078 Electrical Characteristics V rm V br max (std) Ir (max) Conditions Ir I VI. .I VI . r q . ST02D-B2 m •!'.A ! AX 078 Silver 5-2 AX078

T40N14

Abstract: KT40R KA3Z07 KT15R
Contextual Info: T ra n sie n t Surge S uppressors ¿Features] Applications^ 1. Bidirectional characteristics 1. Lightning surge adsorption for communications circuits 2. High speed response 2. Lightning surge adsorption for transmitters and switchboards 3. Large surge current capacity

600w class d circuit diagram schematics

Abstract: TM 1628 IC SCHEMATICS DIAGRAM P6KE200A equivalent 30F126 AP6KE300CA diode P6KE 100 A TISPA79R241 SMBJ40A/CA-TR ZP1400 1SMB5.0CAT3
Contextual Info: ASD and Discrete Products PROTECTION Devices and IPADs™ Improving the Immunity of your System Designer’s Selection Guide USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL

LT GBL406

Abstract: SMBJ8.5CA 2KBP206 TS820-800T LT KBJ608G T1M5F600A 31DQ100 30BQ050 BYM95C SB0100
Contextual Info: SEMICONDUCTOR LITEON LITE-ON Cross Reference Competitor P/N 1.5CE10 1.5CE100 1.5CE100A 1.5CE100C 1.5CE100CA 1.5CE10A 1.5CE10C 1.5CE10CA 1.5CE11 1.5CE110 1.5CE110A 1.5CE110C 1.5CE110CA 1.5CE11A 1.5CE11C 1.5CE11CA 1.5CE12 1.5CE120 1.5CE120A 1.5CE120C 1.5CE120CA

BPL TV circuit for vertical ic

Abstract: 74HC393 equivalent KL3N
Contextual Info: / jm T L * rn J i n C A LTC1292/LTC1297 B TECHNOLOGY Single Chip 12-Bit Data Acquisition Systems KOTUR6S D€SCRIPTIOn • Built-In Sample-and-Hold The LTC1292/LTC1297 are data acquisition systems that contain a 12-bit, switched-capacitor successive approxi­

10L06

Abstract: P10R25 KL3N
Contextual Info: T ra n sie n t S urge S u p p re sso rs [F e a tu re s] 1. Bidirectional characteristics [A pplications] 1. Lightning surge adsorption for communications circuits 2. High speed response 2. Lightning surge adsorption for transmitters and switchboards 3. Large surge current capacity

KA3Z07

Contextual Info: Surge Absorbers ¡¡£1 Applications [Features] 1. Bidirectional or uni-directional characteristics 1. Lightning surge adsorption tor communications circuits 2. High speed response 2. Lightning surge adsorption for transmitters and switchboards 3. Large surge current capacity

P6KE200A equivalent

Abstract: SICTE5 3A143 MR2835S equivalent ZP1400 P1.5KE440 ZZY-62 P6KE62CA BZW06-5V8 equivalent BR220-140 SICTE-8
Contextual Info: CROSS REFERENCE PROTECTION INDUSTRY STANDARD 1SMA59 1SMB5.0AT3 SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST SM2Zxxx SM6T6V8A or SMBJ5.0A-TR ↓ 1SMB170AT3 ↓ SM6T200A or SMBJ170A-TR SM6T6V8CA or SMBJ5.0CA-TR 1SMB5.0CAT3 ↓ 1SMB78CAT3 ↓ SM6T200CA or SMBJ170CA

P1.5KE SMCJ

Abstract: transistor 603 11f smd DALC P1,5KE TIP290 m 9583 transistor axial diode 1.5Se 24 5KE56CA TISPA79R241 3A143
Contextual Info: Protection devices Selection guide April 2006 www.st.com 2 Contents Introduction 4 Product references 5 ESD production Standards and technical recommendations EOS and ESD transient voltage suppressor: Transil 6 6 8 Data protection against ESD 13 Telecom protection