KL DIODE Search Results
KL DIODE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ20V |
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Zener Diode, 20 V, USC | Datasheet | ||
CUZ12V |
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Zener Diode, 12 V, USC | Datasheet | ||
MUZ5V6 |
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Zener Diode, 5.6 V, USM | Datasheet |
KL DIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SK50GARL065F B- J KL M$N 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT O$PH BQ J KL M$ C$ BQ J UKL M$ C$YZ STT O LV W B- J XT M$ VT W UKT W [ KT O BQ J UKL M$ UT `- B- J KL M$ KL W B- J XT M$ Ua W C$YZJ K : C$0%& IGBT Module SK50GARL065F |
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SK50GARL065F | |
shindengen m
Abstract: Thyristor diodes
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tra80 D0-214AA shindengen m Thyristor diodes | |
NOx sensor
Abstract: rohm 574 kl diode sox sensor sensor nox sox co thousand years ethylbenzene BOD 1-04
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WEE-470
Abstract: WEE-470 inductor allen bradley 10k pot diode tvr 4j max63q MAX630/MAX4193 Nytronics WEE FERRITE corel max830 Siemens Ferrite B64290
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MAX630 MAX4193 375mA 737-78OO WEE-470 WEE-470 inductor allen bradley 10k pot diode tvr 4j max63q MAX630/MAX4193 Nytronics WEE FERRITE corel max830 Siemens Ferrite B64290 | |
Contextual Info: f Z Z SGS-THOMSON ^ 7# R STTA6006T V 1/2 TURBQSWITCH "A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS If(av) 2*30A V rrm 600V trr (typ) 35ns A2 Kl AI STTA6006T(V)1 1.5V Vf (max) ES HE K2 A2 Kl K2 A1 STTA6006T(V)2 FEATURES AND BENEFITS |
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STTA6006T | |
MAX500ACPEContextual Info: 19-1016; Rev2;2/96 >kl>JX I>kl , CMOS, Quad Serial-Interface 8-Bit DAC _ G e n e ra l D e s c rip tio n The MAX500 achieves 8-bit performance over the full operating temperature range without external trimming. F e a tu re s ♦ Buffered Voltage Outputs |
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MAX500 MAX500S, 10-bit 5fl7bb51 MAX500ACPE | |
EAF 801
Abstract: eaf801 RG2 DIODE diode rg2 diode UF DC PICO Ace 25 UG DIODE 62 diode TELEFUNKEN e tube 801
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Contextual Info: >kl>JX I>kl 19-1263; Rev 0: 7/97 350mA, 16,5V Input, Low-Dropout Linear Regulators Genera/ Description The MAXI 658/MAX1659 feature a 1|JA shutdown mode, reverse battery protection, short-circuit protection, and thermal shutdown. They are available in a special highpower 1.2W , 8-pin SO package designed specifically |
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350mA, 658/MAX1659 490mV 350mA MAX1659) MAX1658) | |
Contextual Info: SKiM455GD12T4D1 '- KL M6P @,3+99 21.+*;<9+ 9=+-<A<+F Absolute Maximum Ratings Symbol Conditions IGBT 567I 'O ) M6 $6 'O ) JLQ M6 $6DV JKQQ 5 QQ E '.+019<,S ) TQ M6 UQL E JULQ E Y KQ 5 JQ ^9 '.+019<,S ) KL M6 K`L E '.+019<,S ) TQ M6 KJL E aQQ E $6DV ) UN$6WXV |
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SKiM455GD12T4D1 18DVI: | |
Contextual Info: > kl> JX I> kl 19-0919; Rev 1; 7/96 +5V/Adjustable CMOS Step-dow n Sw itching R egulator F e a tu re s The MAX638 step-down switching regulator is designed for minimum component, low power, DC-DC conversion. ♦ Fixed +5V Output Typical applications require only a small, low-cost induc |
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MAX638 | |
Contextual Info: >kl>JX I>kl 1 0 - Bi t , 2 0 M s p s , T T L - O u t p u t A D C Description Features ♦ Monolithic 20Msps Converter Inputs and outputs are TTL com patible. An overrange output is provided to indicate overflow conditions. Output data format is straight binary. Power dissipation is low at |
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20Msps MAX1160 10-bit, | |
MAX730ACPAContextual Info: 19-0165; Rev2; 1/96 >kl>JX I>kl 5V, Step-Down, Current-Mode PWM DC-DC Converters _ Features The M A X 730A /M A X 738A /M A X 744A are 5 V -o u tp u t CMOS, step-down switching regulators. The MAX738A/ MAX744A accept inputs from 6V to 16V and deliver |
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MAX738A/ MAX744A 750mA. 500mA MAX730A 450mA 750mA MAX738A/MAX744A) 16-PIN MAX730ACPA | |
Contextual Info: SKM 600GB066D Absolute Maximum Ratings Symbol Conditions IGBT 123H $R * KL M2 C2 $R * J^L M2 $ ,5& * KLM2@ <'/&55 .- &%785& 59&(8=8&E APP 1 ^AP D $( * _P M2 L^P D _PP D aKP 1 $R * JLP M2 A U5 $( * KL M2 ^PP D $( * _P M2 LJP D _PP D LPP D $:R N OP Q J^L M2 |
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600GB066D | |
Contextual Info: SKM 145GB066D Absolute Maximum Ratings Symbol Conditions IGBT 123H $S * KL M2 C2 $S * J^L M2 C2Za $ ,5& * KLM2@ <'/&55 .- &%785& 59&(8=8&I AQQ 1 J_L D $( * `Q M2 JLQ D YQQ D b KQ 1 $S * JLQ M2 A V5 $( * KL M2 JLQ D $( * `Q M2 JQQ D YQQ D ``Q D KQQ D O PQ NNN R J^L |
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145GB066D 11Typ. | |
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2M84GContextual Info: SKM 195GB066D Absolute Maximum Ratings Symbol Conditions IGBT 789, .O 2 KL M8 E8 .O 2 JXL M8 E8SZ .03+ 2 KLM8B * 5(+ %41(/<-+( +=(0-@-(G CQQ 7 KCL F .0 2 YQ M8 KQQ F [QQ F ¥ KQ 7 .O 2 JLQ M8 C `+ .0 2 KL M8 KQQ F .0 2 YQ M8 J]Q F [QQ F J[QQ F KQQ F W [Q NNN b JXL |
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195GB066D SKM195GB066D 2M84G | |
Contextual Info: 19-1390; Rev 0; 10/98 >kl>JX I>kl L o w - P r o f i l e , 3V, 1 2 0 f j A , I rDA I n f r a r e d T r a n s c e i v e r Description The MAX3120 IrDA 1.2-com patible infrared transceiver is optim ized for battery-pow ered, space-constrained applications. It consumes only 120pA while supporting |
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MAX3120 120pA 115kbps AX3120 MS012-XX | |
Q62703Q4323
Abstract: Q62703-Q4328
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T677JL-1 Q62703-Q4327 T770JL-1 Q62703-Q4328 A671JL-1 Q62703Q4323 Q62703-Q4328 | |
RKZ11B2KL
Abstract: RKZ12B2KL RKZ13B2KL RKZ15B2KL RKZ16B2KL RKZ18B2KL RKZ20B2KL RKZ10B2KL
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REJ03G1519-0100 PXSF0002ZA-A REJ03G1519-0100 RKZ11B2KL RKZ12B2KL RKZ13B2KL RKZ15B2KL RKZ16B2KL RKZ18B2KL RKZ20B2KL RKZ10B2KL | |
Contextual Info: RKZ-KL Series Silicon Planar Zener Diode for Surge Absorption and Stabilizer REJ03G1519-0100 Rev.1.00 May 09, 2007 Features • Emboss Taping Reel Pack. • Extremely small Flat Lead Package EFP is suitable for surface mount design. Ordering Information |
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REJ03G1519-0100 PXSF0002ZA-A | |
MARKING CODE S5B
Abstract: S5B SOT
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Q68000-A8438 OT-23 EHA0700* MARKING CODE S5B S5B SOT | |
TV horizontal Deflection Systems 25Contextual Info: s= 7 SGS-THOMSON ^7# Kl gKLiM(s iO(gS BUH315D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E 8 1 734 (N) NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE. |
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BUH315D ISOWATT218 BUH315D ISOWATT218 TV horizontal Deflection Systems 25 | |
Contextual Info: FF 150 R 06 KL 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte VcES Maximum rated values 600 V 150 A 300 A 700 W V ge 20 V Inversdiode Inverse diode V eg 20 V Elektrische Eigenschaften Electrical properties |
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600KF< | |
Contextual Info: SIEMENS Silicon Low Leakage Diode Array BAV 170 • Low leakage applications • Medium speed switching times • Common cathode Type Marking Ordering Code tape and reel BAV 170 JXs Q62702-A920 Pin Configuration Package1) 3 » SOT-23 E * J Kl ° EHA0700* |
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Q62702-A920 OT-23 a535bos fl235b05 | |
Contextual Info: SIEMENS Silicon Low Leakage Diode Array BAW 156 • Low-leakage applications • Medium speed switching times • Common anode Type Marking Ordering Code tape and reel BAW 156 JZs Q62702-A922 Pin Configuration Package1) 3 ° Kl î SOT-23 M » EHAÛ7006 Maximum Ratings |
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Q62702-A922 OT-23 01E0M44 |