KL 05 DIODE Search Results

Contextual Info: SKM 300GB123D Absolute Maximum Ratings Symbol Conditions IGBT *7 &* &*; =7 .37;+.& @ .  + + 6* 0511 Inverse diode SEMITRANSTM 3 IGBT Modules & &(; . 4 05 91 6* 4 /  &( 4 /1 C  AC .? 4 /51 6* 0$1 /91 <11 + + 0011 + :51 0:1 $11 + +

kl 05 diode

Abstract: HB77
Contextual Info: SKM 300GB123D Absolute Maximum Ratings Symbol Conditions IGBT *7 &* &*; =7 .37;+.& @ .  + + 6* 0511 Inverse diode SEMITRANSTM 3 IGBT Modules & &(; . 4 05 91 6* . 4 05 91 6* 4 /  &( 4 /1 C  AC .? 4 /51 6* 0$1 /91 $11 <<1 + + 0011

Contextual Info: SKM 300GB123D Absolute Maximum Ratings Symbol Conditions IGBT *7 &* &*; =7 .37;+.& @ .  + + 6* 0511 Inverse diode SEMITRANSTM 3 IGBT Modules & &(; . 4 05 91 6* 4 /  &( 4 /1 C  AC .? 4 /51 6* 0$1 /91 <11 + + 0011 + :51 0:1 $11 + +

SKM300GB123D

Contextual Info: SKM 300GB123D Absolute Maximum Ratings Symbol Conditions IGBT *7 &* &*; =7 .37;+.& @ .  + + 6* 0511 Inverse diode SEMITRANSTM 3 IGBT Modules & &(; . 4 05 91 6* 4 /  &( 4 /1 C  AC .? 4 /51 6* 0$1 /91 <11 + + 0011 + :51 0:1 $11 + +

Amplifier 1000w schematic diagrams

Abstract: 1000w audio amplifier circuit diagram 12v 1000W AUDIO AMPLIFIER CIRCUIT DIAGRAM 500w audio power amplifier circuit diagram 1000w power amplifier circuit diagram 500w audio amplifier circuit diagram 1000W MOSFET Audio Amplifier Circuit 1000w Mosfet Power Audio Amplifier circuit Diagram 12v 1000W AUDIO AMPLIFIER 1000W power amplifier schematic diagrams
Contextual Info: Tri path Technol og y, I nc. - Techni cal I nformati on RB-TDA2500-1 CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information Rev. 1.0 May 2005 GENERAL DESCRIPTION The RB-TDA2500 reference board is based on the TDA2500 digital audio power amplifier driver from

Contextual Info: SKiM 601GD126DM power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT ./  78 ./( ; $ %   SKiM 5 SKiM 601GD126DM

Sj 33 diode

Contextual Info: T O SH IB A 1 SV 217 TO SHIBA VAR IABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 1 7 C ATV TUN IN G . U nit in mm • High Capacitance Ratio : C 2 V / C 25 V = 12.5 Typ. • Excellent C-V Characteristics, and Small Tracking Error. 0.2 + 1.25 - 0.

Contextual Info: SEMiX 352GB128Ds Absolute Maximum Ratings Symbol Conditions IGBT  - -34 6 "8*       ' /,  !  +  93$-9: ;   Values Units +', 01, '2, 5, 7 ',  5, <<< = +(, +'(  $ $  ) 5,  '1, +/, 5, $ $ +2, $ $* +  < Inverse diode

3C91C

Abstract: 3C92C 3C91 optocoupler telefunken 3C91 u 110 telefunken 3c92 3C91 1c92 3C91C telefunken
Contextual Info: T p lu I p 3C91C/3C92C S e m i c o n d u c t o r s Optocoupler with Phototransistor Output Description The 3C91C/ 3C92C consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead hermetically sealed metal can.

Contextual Info: SKNa 202 Stud Diode Avalanche Diode SKNa 202 8OP2Q:1 ?N2B@ S 677 $ O:&=1:5: %&'5+ K3/ 3(,1(5350 3.+/&,13(Q F:&= 2:1( 8 [D77 ]777 ]T77 ]677 ]D77 ]V77 ?N$8 S T77 $ O01(U CV7W >) S V7 XFQ @HI& T7T¥[D @HI& T7T¥]7 @HI& T7T¥]T @HI& T7T¥]6 @HI& T7T¥]D @HI& T7T¥]V

Contextual Info: 1SV214 TO SHIBA 1 SV2 1 4 TOSHIBA VARIABLE CAPACITANCE DIODE TV TUNING. . • • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio : C2V/C25V = 6.5 Typ. Low Series Resistance : rs = 0.4(1 (Typ.) Excellent C-V Characteristics, and Small Tracking Error.

phillips zener

Abstract: Leach relay M83536
Contextual Info: SERIES KL ENGINEERING DATA SHEET RELAY - LATCH 4 PDT, 12 AMP Magnetic latch operation All welded construction Contact arrangement 4 PDT Qualified at 10Amps to MIL-PRF-83536 PRINCIPLE TECHNICAL CHARACTERISTICS Contacts rated at 28 Vdc; 115 Vac, 400 Hz, and

Contextual Info: SERIES KL ENGINEERING DATA SHEET RELAY - LATCH 4 PDT, 12 AMP Magnetic latch operation All welded construction Contact arrangement 4 PDT Qualified at 10Amps to MIL-PRF-83536 PRINCIPLE TECHNICAL CHARACTERISTICS Contacts rated at 28 Vdc; 115 Vac, 400 Hz, and

2SK2385

Abstract: S2510
Contextual Info: TOSHIBA 2SK2385 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2385 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 r 4V Gate Drive

Contextual Info: LED HIGH POWER M07 Product Series LED HIGH POWER M07 CoB Product Series Data Sheet Created Date: 10 / 30 / 2013 Revision: 1.0, 12 / 10 / 2013 1 BNC-OD-C131/A4 Created Date : 05/26/2007 Revison : 1.01, 05/26/2008 LED HIGH POWER M07 Product Series 1. Description

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿ ¿ P D 6 3 , 6 3 A , 6 4 4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION DESCRIPTION Equipped w ith low -voltage 1.8 V operation, a carrier generation circu it for infrared rem ote control transm ission,

tv remote control system Toshiba

Contextual Info: TO SH IB A TC9243P/F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC9243P, TC9243F INFRARED REMOTE CONTROL SIGNAL TRANSMISSION LSI The TC9243P, TC9243F are infrared remote control signal transmission LSI which is suited for remote control of

TC9177P

Abstract: TC9176P TC9154P TC9176 electronic dimmer IC VOLUME IC R-30dB TA75559P equivalent
Contextual Info: TOSHIBAn ELECTRONIC 02 T- 77-21 ELECTRONIC VOLUME CONTROLLER. Unit in mm TC9185P and TC9195P are the controller exclusively developed for electronic volume IC TC9176P, TC9177P and TC9154P. They are capable of making control of volume and balance, and indication of volume and balance by LED.

Contextual Info: SKM 200GB124D Absolute Maximum Ratings Symbol Conditions IGBT 7-8 -< 7!8 ?   7 SEMITRANSTM 3 Low Loss IGBT Modules SKM 200GB124D + 4 02 D  BD ? 4 052 6- Characteristics Symbol Conditions IGBT 7-8        Typical Applications  $       

Contextual Info: SKM 200GB124D Absolute Maximum Ratings Symbol Conditions IGBT 7-8 -< 7!8 ?   7 SEMITRANSTM 3 Low Loss IGBT Modules SKM 200GB124D + 4 02 D  AD ? 4 052 6- Characteristics Symbol Conditions IGBT 7-8        Typical Applications  $       

200GB124D

Abstract: SKM200GB124D
Contextual Info: SKM 200GB124D Absolute Maximum Ratings Symbol Conditions IGBT 7-8 -< 7!8 ?   7 SEMITRANSTM 3 Low Loss IGBT Modules SKM 200GB124D + 4 02 D  BD ? 4 052 6- Characteristics Symbol Conditions IGBT 7-8        Typical Applications  $       

Contextual Info: SKiM 601GD126DM Absolute Maximum Ratings Symbol Conditions IGBT ./  7 ./( ; $ %   SKiM 5 SKiM 601GD126DM Preliminary Data Features           & ?=    &  Values Units 0*11 451 $631% 891 $341% : *1 < 41 = > 0+1 $0*+%

Contextual Info: SKiM 601GD126DM Absolute Maximum Ratings Symbol Conditions IGBT ./  78 ./( ; $ %   SKiM 5 SKiM 601GD126DM Preliminary Data Features           & ?=    &  Values Units 0*11 451 $631% 911 : *1 < 41 = > 0+1 $0*+%

TDH-7070

Abstract: two change over relay 8 pin
Contextual Info: SERIES KL ENGINEERING DATA SHEET RELAY - LATCH 4 PDT, 12 AMP Magnetic latch operation All welded construction Contact arrangement 4 PDT Qualified at 10Amps to MIL-PRF-83536 PRINCIPLE TECHNICAL CHARACTERISTICS Contacts rated at 28 Vdc; 115 Vac, 400 Hz, and