KJE Z Search Results

marking kje

Abstract: "Marking code" KJE SOT-23 Diode bav99 kje KJE BAV99 BAV99 application KJE SOT23 BAV99-7-F Diode bav99 std transistor kje KJE transistor
Contextual Info: BAV99 DUAL SURFACE MOUNT SWITCHING DIODE Please click here to visit our online spice models database. Features • • • • • • Mechanical Data • • Fast Switching Speed Surface Mount Package Ideally Suited for Automated Insertion For General Purpose Switching Applications

Contextual Info: _L r* O CD r* 11 0) i u 3 .5 , is r r . ] Ì i A : c^radI""2ark)'\ î f 0: & CD f ^ f ; S o oc BMW _ i— UJ CIRCUIT NÒ. ) £=Ü n in 3— ta S le 1 £Ä*Sr Kb— K 7“ ? MANUFACTURING TRADE MARK PLACE Xtt ~ B * -AMP OR AMP JAPAN & & A 2. 3. A t

4.194304 crystal oscillator

Abstract: MSM5529 MSM5929 c 5929 MTPD3650D-1.4-DIG
Contextual Info: A K H iL i y / y semiconductor c MSM5529 4 DIGIT MULTIPLEXED VF AUTO CLOCK MSM5929 4 DIGIT MULTIPLEXED LED AUTO CLOCK GENERAL DESCRIPTION FEATURES • .C M O S — low po«ve< dissipation The M SM5S29 and M SM 5929 are m onolithic, m etal-oate CM O S integrated circ u its that drrve m ultiplexed 4-dig it vacuum -fluorescent

Contextual Info: 4 3 i 1 CO CM rr- CD i o 8 . 3 MAX. co i/ S y n - T - r y ? * 6 $ 1 5 .3 Í i i f ' m 1 1 TTT' «4 - - i « « a \ 1 3 = - —ö = — - d c r j- - 1 c . ='•■ * LU SMMttfM-JÍ FIG. 1

KJE transistor

Contextual Info: 32E D • flS3b3EG DOlb^S 4 « S I P NPN Silicon RF Transistor 3 1 -^ 3 SIEMENS/ SPCLi SEMICONDS T ' BFQ 19S _ • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 to 70 mA.

Contextual Info: BAV99 vtsM A Y ▼ Vishay Telefunken Dual Surface Mount Switching Diode Features • Fast sw itching speed • High conductance • Surface m ount package autom atic insertion • C onnected in series ideally suited for 94 8550 Absolute Maximum Ratings Tj = 25°C

ts0524lb

Abstract: ts0524 TS0524LB-X SMU FM IC TS-0524
Contextual Info: P r o d u c t U p d a t e F i l e Permeability Sensing Type / Piezoelectric Type Toner-Concentration and Toner-Level Sensors jfiJSRoHSJB^ S Îtë Z R o H S ifr$ -:£ â M a fi EU D ire c tiv e 2 0 0 2/95 /E C , T S J S P s . e a*ä6M Ä-ff!iKi* awaE(PBB «)iiaraE«(PBDE).

2SD627

Abstract: TI15J 2sb644
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

LM124J

Abstract: LM2902 LM124 T-11213 THOMSON LM2902 ic lm324 lm324 schematic diagram LM224 LM324 A-LM2902
Contextual Info: 7=52^237 ^ r z z 7 # S C S - T H O 00230b0 M S O ö • N L M K a n e B @ iiiL ii( B T O B ie 8 S G S-THOMSON 1 2 4 , A - L M L M 2 2 4 , A 3 2 4 . A - L M 2 9 0 2 3QE D LOW POWER QUAD OPERATIONAL AMPLIFIERS LARGE VOLTAGE GAIN : 100 dB VERY LOW SUPPLY CURRENT/AMPLI

5AW transistor

Abstract: 2SA80 2SA807 2SA81 2SA814 2SA815 2SA817 2SC1601
Contextual Info: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

ZTR 200

Abstract: 1602G SFF1601G SFF1608G
Contextual Info: TAIWAN SEMICONDUCTOR iS SFF1601G - SFF1608G Isolated 16.0 AMPS. Glass Passivated Super Fast Rectifiers ¡0 RoHS C O M P L IA N C E IT-Q-220AB .Ch. Features <• ■y❖ ❖ •fr H ig h e ffic ie n c y ; lo w V F H ig h c u rre n t c a p e b ility H ig h re lia b ility

ex marking code diodes

Abstract: SOT23 DIODE marking CODE Data BAV99 bav99 Date Code BAV99_Q
Contextual Info: BAV99 DUAL SURFACE MOUNT SWITCHING DIODE Features Mechanical Data • • • • • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automated Insertion For General Purpose Switching Applications Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2

ram 256x8

Abstract: N8X350 8X350 8X300 N8X350F 8X305 S8X350 SC10 8x300 Signetics Application Notes sc1012
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 2048-BIT BIPOLAR RAM 256 X 8 DESCRIPTION 8X350 (T.S.) TYPICAL I/O STRUCTURE PIN CONFIGURATION The 8X350 bipolar RAM is designed p rinci­ p ally as a w orking sto ra g e elem ent in an 8X300 based system . Internal circuitry is

BCY77VII

Abstract: BCY78X BCY79 BCY 791x BCY77VIII BCY77 BCY78 Q62702-C327-V1 1Zv transistor
Contextual Info: BCY77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY 77, BCY 78 and BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 TO-18 . The collector is electrically connected to the case. The transistors are of particular use in low-noise AF pre- and driver stages as well as in

C254A

Abstract: LU68C254A
Contextual Info: ¡ 1 1 * |C W 0 R K S LU68C254A 32K X 8 Low Voltage CMOS Static RAM PRELIMINARY, JANUARY 1995 FEATURES FUNCTIONAL DESCRIPTION • T h e UJ68C254A is a general p u rp o s e low p o w e r a n d low voltage op eratin g Static R an d o m Access M em ory fabricated u sin g IC W O RK S' ad v an ced

BCY77

Abstract: BCY79 BCY 791x zr 4.7v bcy 78 Q62702-C327 BCY78 Q62702-C327-V1 Transistor 78 L 05 1Zv transistor
Contextual Info: BCY77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY 77, BCY 78 and BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 TO-18 . The collector is electrically connected to the case. The transistors are of particular use in low-noise AF pre- and driver stages as well as in

12L10

Abstract: PLD20G 20G10B-20 16L6 18L4 20L10 20L8 CG7C323B-A15HC J-64
Contextual Info: C Y P R ES S SEMI CONDUCTOR 4bE T> 2 5 0 ^ 2 QQOb^ab T QCYP PLDC20G10B/PLDC20G10 ir - - - ~— CMOS Generic 2 4 ^ n Reprogrammable Logic Device SEMICONDUCTOR Features • Fast — Commercial: tpo = IS ns, tco = 1 ns, ts = 12 ns — Military: tpo = 20 ns, tco ~ 15 os,

N8X3

Contextual Info: Signetics 8X360 Memory Address Director MAD Product Specification Microprocessor Products DESCRIPTION FEATURES The 8X360 Memory Address Director (MAD) (Figure 1), is a high-speed, per­ formance oriented peripheral. The 8X360 reduces bookkeeping and soft­

Thomson-CSF POLYESTER capacitors

Abstract: Thomson-CSF POLYESTER capacitors TPC thomson film capacitors .22 uf 400 volt ac capacitor thyristor control arc welding rectifier circuit thyristor control spot welding circuit KJE transistor mil-m-24519 FAV36B0804K capacitor snubber Polypropylene 1 uf
Contextual Info: A KYOCERA GROUP COMPANY AVX Medium Power Film Capacitors For Power Applications Contents MEDIUM POWER FILM CAPACITORS DC FILTERING FFB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

AM29F040B

Contextual Info: PRFLifVliNApv AM D il Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.35nm process technology

Contextual Info: NJ U 6 4 3 6 PRELIMINARY 1/4 DUTY LCD D R I V E R W I T H GENERAL DESCRIPTION The NJU6436 is a 1/4 duty LCD driver for segment type LCD panel with key scanning, Ir receiving and LED driv­ ing function. The LCD driver consists of 4-common and 60-segnent drives up to 240 segments and LED driver drives 1 LED

Contextual Info: TOSHIBA TC58257AP/AF-20, -25 SILICON STACKED GATE CMOS 32,768 WORD x 8 BIT CMOS ELECTRICALLY ERASABLE AND PROGRAMMABLE READ ONLY MEMORY Description Th e T C 5 8 2 5 7 A P /A F is a 3 2 ,7 6 8 w o rd x 8 bit electrically ch ip erasable p ro g ra m m a b le read only m e m o ry m o ld e d in a 2 8 -p in

Contextual Info: P R E L IM IN A R Y AMDH Am29LV116B 16 Megabit 2 M x 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

LH536

Abstract: AS29X 29LV002-150 kje z1
Contextual Info: Preliminary information Features • O rg a n iz a tio n : 2 5 6 K X 8 • S ecto r a rc h ite c tu re - O ne 16K; tw o 8K; one 32K; and three 64K byte sectors - Boot code sector architecture— T top or B (bottom ) - Erase any com bination o f sectors or full chip