KERSEMI Search Results

KERSEMI

Contextual Info: KSM9N25C/KSMF9N25C KERSEMI ELECTROIC CO.,LTD. 250V N-Channel MOSFET TO-220 TO-220F Features • • • • • • 8.8A, 250V, RDS on = 0.43Ω @VGS = 10 V Low gate charge ( typical 26.5 nC) Low Crss ( typical 45.5 pF) Fast switching 100% avalanche tested

Contextual Info: FGA25N120AN TO-3P Features • High speed switching • Low saturation voltage : VCE sat = 2.5 V @ IC = 25A • High input impedance General Description Employing NPT technology, Kersemi AN series of provides low conduction and switching losses. The AN series offers an solution for application such as induction

Contextual Info: KSM61N20 200V N-Channel MOSFET TO-220 Features • 61A, 200V, RDS on = 0.041Ω @VGS = 10 V • Low gate charge ( typical 58 nC) • Low Crss ( typical 80 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Kersemi proprietary, planar stripe,

Contextual Info: TL431 KERSEMI ELECTRONIC CO.,LTD. PROGRAMMABLE VOLTAGE REFERENCE Z DESCRIPTION TO92 The TL431 is a programmable shunt voltage reference with guaranteed temperature stability over the entire temperature range of operation. The output voltage may be set to any value

Contextual Info: KSMD8P10TM_F085 100V P-Channel MOSFET TO-252 Features • • • • • • • • -6.6A, -100V, RDS on = 0.53Ω @VGS = -10 V Low gate charge ( typical 12 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability Qualified to AEC Q101

Contextual Info: KSMD7N30 / KSMU7N30
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Contextual Info: KSM14N30
  
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Contextual Info: KSMF10N20
  
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Contextual Info: KSMD3N25 / KSMU3N25 250V N-Channel MOSFET TO-252 TO-251 Features • • • • • • 2.4A, 250V, RDS on = 2.2Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 4.7 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description

Contextual Info: KSMD19N10L / KSMU19N10L 100V LOGIC N-Channel MOSFET TO-252 TO-251 Features • • • • • • 15.6A, 100V, RDS on = 0.1Ω @VGS = 10 V Low gate charge ( typical 14 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability

FQP90N10

Contextual Info: KSM90N10V2/KSMF90N10V2 100V N-Channel MOSFET • • • • • • TO-220F TO-220 Features 90 A, 100V, RDS on = 0.01Ω @VGS = 10 V Low gate charge ( typical 147 nC) Low Crss ( typical 300 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Contextual Info: KSM9N50C/KSMF9N50C 500V N-Channel MOSFET TO-220 TO-220F Features • • • • • • 9 A, 500V, RDS on = 0.8 Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 24 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description

Contextual Info: KSMD5N50 / KSMU5N50
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Contextual Info: KSM7N10L 100V LOGIC N-Channel MOSFET Features • • • • • • • • TO-220 7.3A, 100V, RDS on = 0.35Ω @VGS = 10 V Low gate charge ( typical 4.6 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating

Contextual Info: KSM12N20L 200V LOGIC N-Channel MOSFET TO-220 Features • • • • • • • 11.6A, 200V, RDS on = 0.28Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct

Contextual Info: KSM6N90C/KSMF6N90C 900V N-Channel MOSFET TO-220 TO-220F Features • • • • • • 6A, 900V, RDS on = 2.3Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description

Contextual Info: KSMD6N40 / KSMU6N40
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Contextual Info: KSMD2N100/KSMU2N100 1000V N-Channel MOSFET TO-252 TO-251 Features • • • • • • 1.6A, 1000V, RDS on = 9Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 5 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description

Contextual Info: KSMD5N60C / KSMU5N60C N-Channel MOSFET 600 V, 2.8 A, 2.5 Ω Features TO-251 TO-252 • 2.8 A, 600 V, RDS on = 2.5 Ω (Max) @VGS = 10 V, ID = 1.4 A • Low Gate Charge (Typ. 15 nC) • Low Crss (Typ. 6.5 pF) • 100% Avalanche Tested • RoHS compliant Description

Contextual Info: KSM8P10 100V P-Channel MOSFET TO-220 Features • • • • • • • -8.0A, -100V, RDS on = 0.53Ω @VGS = -10 V Low gate charge ( typical 12 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating

Contextual Info: KSM7N60 600V N-Channel MOSFET TO-220 Features • • • • • • 7.4A, 600V, RDS on = 1.0Ω @VGS = 10 V Low gate charge ( typical 29 nC) Low Crss ( typical 16 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description These N-Channel enhancement mode power field effect

Contextual Info: KSM8N90C/KSMF8N90C 900V N-Channel MOSFET TO-220 TO-220F Features • • • • • • 6.3A, 900V, RDS on = 1.9Ω @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description

Contextual Info: KSMD5N15 / KSMU5N15
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Contextual Info: KSMD4N25 / KSMU4N25 N-Channel MOSFET 250 V, 3 A, 1.75Ω TO-251 TO-252 Features • 3 A, 250 V, RDS on = 1.75 Ω (Max) @VGS = 10 V, ID = 1.5 A • Low Gate Charge (Typ. 4.3 nC) • Low Crss (Typ. 4.8 pF) • 100% Avalanche Tested Description This N-Channel enhancement mode power MOSFET is