KER 350 Search Results

resistor 8k6

Abstract: CH-3185 12K5 1K48 R924 Widap
Contextual Info: Wire-wound tubular resistors type FW40 Data sheet Construction • Ceramic resistor carrier KER 410 • Resistance material CuNi44 • End- and tap clips made of brass nickeled • Holding bolt, angle brackets or mounting plates, also nuts and conical spring washers made of

Contextual Info: DTF-A S erp s _DOUBIE BAIANCED M KER 1 to 3500M Hz/+ 10 to +15 dBm IO /tHRaW em eEcPadcaga PRINCIPAL SPECIFICATIONS RF/LO Model Frequency, Number MHz LO Operating Drive, Range, Nom. MHz Conversion Loss, dB, Max. Typ. Port Isolation, Min. L-R L-X R-X

CH-3185

Abstract: CuNi44 250R FW30
Contextual Info: Wire-wound tubular resistors type FW30 Data sheet Construction • Ceramic resistor carrier KER 410 • Resistance material CuNi44 • End- and tap clips made of brass nickeled • Holding bolt, angle brackets or mounting plates, also nuts and conical spring washers made of

sensor alcohol

Abstract: DL4007 DL-400-7-KER 4.1 pin 3 pin alcohol sensor
Contextual Info: DL-400-7-KER 4.1 pin Position Sensing Photodiodes Special characteristics: typ. 350 pF typ. 0,4 A/W typ. 0,62 A/W 2.54 20.32 0.45 25.4 lead frame contacts typ. 12 kΩ typ. 4 µs ANODE 1 CATHODE 2 0,3 µm +/- 1% typ. 100 V Ceramic with pins Operating temperature

4007 smd

Abstract: DL4007 alcohol sensor sensor alcohol DL-400-7-KER
Contextual Info: DL-400-7-KER 4.1 SMD Position Sensing Photodiodes Special characteristics: 20 x 20 mm 2 400 mm max. 2 µA typ. 800 nA typ. 0,4 A/W typ. 0,62 A/W 20.32 ANODE 1 4.2 1.6 typ. 4 µs 0,3 µm Chip: DL-400-7 +/- 1% typ. 100 V Ceramic S.M. Operating temperature Storage temperature

09 45 715 2503

Abstract: 09 45 851 1554
Contextual Info: 98 42 115 0201 HARTING Automation IT Industrial Cabling ISO/IEC 24 702 / EN 50 173-3 1 People | Power | Partnership HARTING & LEONI Ker p en wor ldwide Automation IT ny proc esses: Mar ke g tin g s at i o n ic un Appl ic p l at f o r m D nt Automation IT

ker 221

Abstract: elektronik DDR L8853 ddr veb hermsdorf Filter Hermsdorf Deutsche Post Scans-048 nf schaltungen bauelemente DDR
Contextual Info: K > A U S G A B E 1965 Abbildungen und W e rte gelten nur bedingt als Unterlagen für Bestellungen. Rechtsverbindlich Ist |eweils die Auftragsbestätigung. Änderungen Vorbehalten. E x p o r t e u r : Heim electric, Deutsche Export- und Importgesellschaft m .b .H ., 102 Berlin 2, Liebknechtstraße 14, DDR

VEB Keramische Werke

Abstract: keramische Werke Hermsdorf hermsdorf ker 221 ABB TKC ker 221 din 40685 Scans-048 VEB M ik ro e le k tro n ik Werke Hermsdorf "keramische werke"
Contextual Info: VEB KERAMISCHE WERKE HERMSDORF — HERMSDORF/THÜRINGEN VEB KERAMISCHE WERKE HERMSDORF - H E R M S D O R F / THÜR 7 T IKWH1 DIN-Kondensatoren Miniatur-Kondensatoren Spezialtypen Trimmer H o c h l e i st u n g s - K o n d e n s a t o r e n KATALOG HFKo . D ra h tw o rt: Kaw eha H e rm sd o rfth ü r.

Oil and Gas

Abstract: EPC Contractor Business Drilling Onshore and Offshore Secondary recovery and well services Refineries
Contextual Info: Oil and Gas Process Instruments for reliable measurements. Original Bourdon by Baumer – just rely on our technological advantage. Sophisticated and proven products, top precision and expert consultancy – Baumer meets all these demands in every respect.

UAF42

Abstract: UAF42 tube Philips schema UCH41 UCH42 diode ponte uaf 42 nf schaltungen RK 69 yb 939
Contextual Info: UAF 42 DIODE-PEHXODE with variable mutual conduotance for use as H.F., I.F. and L.F. amplifier DI0DE-PENIHÖD3 à ponte variable pour l'utilisation oomme amplificatrice H.F., K.F. et B.F. DIODE-PENTHODE mit veränderlicher Steilheit zur Verv/endung als H.F.-, Z.F.— und H.F. Verstärker

nf schaltungen

Abstract: UBF80 J 3305-2
Contextual Info: o JUniukdt"Iubf 80 DUODIODE-PENTODE with variable mutual conductance for use as R.F., I.F. or A.F. amplifier DUODIODE-PENTHODE à pente variable pour utilisation en amplificatrice H.F., M.F. ou B.F. DUODIODE-PENTODE mit veränderlicher Steilheit zur Verwendung als H.F., Z.F. oder N.F. Verstärker

Contextual Info: DASH NO MADE M CODE FROM /< ? 3 REVISIONS o v s *s a C y . <57 s-7/~r " 4 U A N CM 32S04 KH 18 MAR. C 9/ S-D APPROX. SURFACE AREA: i. M A T E R i A S : INSULATOR-TEFLON i A S T M -D -1 4 5 7 GASKET-SILIC0ME RUBBER, H 2 - R - 7 6 S 5M A C O A iT A CT M - B R A S S , Q Q . - B - 6E£>

Contextual Info: Indica 2.4 GHz Chip Antenna Part No. A10381 Product Specification 1 Features • • • • • • • Designed for 2.4 GHz applications: Bluetooth BT, BT EDR, BT LE , Wi-Fi® (802.11a/b/g/n), ZigBee®, etc. Ceramic chip antenna Low profile design for use with no ground beneath the antenna

A10381

Abstract: antenna tuning circuit diagram 2.4 antenna connector
Contextual Info: Indica 2.4 GHz Chip Antenna Part No. A10381 Product Specification 1 Features • • • • • • • Designed for 2.4 GHz applications: Bluetooth BT, BT EDR, BT LE , Wi-Fi® (802.11a/b/g/n), ZigBee®, etc. Ceramic chip antenna Low profile design for use with no ground beneath the antenna

GDD141S

Abstract: SW32CXC13C westinghouse DIODES westinghouse DIODES s10 DC13C 31800A westcode diodes S
Contextual Info: 9 7 0 9 955 W ESTCO D E S E M IC O N D U C T O R S _ Ï F | c17Dc1c1SS DDOm ^S E 34C 01495 D |~ Technical Publication WESTCODE SEMICONDUCTORS DC13C Issue 1 February 1981 Ceramic Capsule Silicon Diodes Type CXC13C 3100 amperes average: up to 3600 volts Vrrm

Contextual Info: HIGH VOLTAGE RECTIFIERS ULTRA-MINIATURE AND MINIATURE • • • • SMALL SIZE EPOXY PACKAGES FAST AND STANDARD RECOVERY TIMES PRV TO 10,000 VOLTS VERY LOW REVERSE LEAKAGE Peak Reverse Voltage PRV Volts EDI Type No. Avg. Forward Current l0 (mA) °100°C

rfm 53 ul94v-0

Contextual Info: 70555 1.65 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 TYP. p A L T E R N A T IV E C O R IN G M A N U F A C T U R E R ’S O P T IO N 5L RIGHT ANGLE W/LATCH & TRI-PEGS (0 .6 4 )/ .0 2 5 SQUARE PIN (13.59) .535 (8.89) .350 E ±.0 10 TYP.

800AL

Abstract: 600va ups SW06PCR030
Contextual Info: lilESTCODE SE MI CON DU CT OR S □ □ □ E S 4T TTOTìSS » 4 •ülE S B r-oi-i^ f TECHNICAL PUBLICATION $ WESTCODE $ SEMICONDUCTORS D P30 IS S U E 2 May, 1989 ^ Stud-Base Silicon Rectifier Diodes Type PCN/PCR030 30amperes average: up to 1200 volts Vr r m

TCA 160C

Abstract: SW36CXC 3600VRRM 1315 SW36CXC595 CXC595 do-200 weight westinghouse DIODES DO-200 Westinghouse diode
Contextual Info: 9709955 34 WESTCODE S EMI CONDUCT ORS 34C 01479 V ~ T ~ D -£ h DE (^70^^55 0001471 4 Technical Publication WESTCODE SEMICONDUCTORS DC595 Issue 1 February 1981 Ceramic Capsule Silicon Diodes Type CXC595 1315 amperes average: up to 3600 volts V r r m RATINGS Maximum values at 160°C, Tj, unless stated otherwise

KS 4558

Abstract: ef40 pour 4558 Philips 4558 ef 40 f 4558 RS 4558 TRIODE itl hfi1
Contextual Info: PHILIPS EF40 PENTODE fer use as A.F. amplifier PENTHODE pour Utilisation en amplificatrice B.F. PSNÏODE zur Verwendung als NF-Verstärker Heating : indirect by A.C. or D.C.; series or parallel supply Chauffage: indirect par C.A. ou C.C.; Vf = 6,3 V alimentation- parallèle ou

alcatel sagem

Abstract: bosch NTC peugeot sagem ketema NOKIA X2 makita bosch peugeot philips NTC 22 thermistor panasonic 614 battery
Contextual Info: NTC Thermistors /A For Fast Charge Control Of Batteries PRODUCT INFORMATION RADIAL TYPE SMD TYPE ND03 or ND06 NC 12 or NC 20 R Values: Between 2.2 K and 100 K R Values: Between 10 K and 100 K Tolerance: 5% Tolerance: 5% Leads are generally insulated by users w ith a therm oshrinkable sheath.

IXTM4N45

Abstract: P-CHANNEL 45A TO-247 POWER MOSFET IXTM4N50 Mosfet K 135 To3
Contextual Info: I X Y S CORP iflE D • 4böbESb OOOGblS 2 ■ \ IXTP4N45, IXTP4N50, IXTM4N45, IXTM4N50 □ IX Y S 4 AMPS, 450-500 V, 1.5Q/2.0S2 MAXIMUM RATINGS Parameter IXTP4N45 IXTM4N45 Sym. IXTP4N50 IXTM4N50 Unit Drain-Source Voltage 1 V 0ss 450 500 vrt„ Drain-Gate Voltage (Re s=1.0 MQ) (1)

Westinghouse thyristor 1500

Abstract: TN630C c17f Westinghouse thyristor N630CH36 2580A thyristors 5000 volt 3000 amperes
Contextual Info: UESTCODE SEMICONDUCTORS 3*1E D • ^70^55 D 0 QS 2S ti ö ■ lilESB f- S T - .? Technical Publication WESTCODE ® SEMICONDUCTORS TN630C Issue 2 July 1985 Convertor Grade Capsule Thyristor Type N630C 1500 amperes average: up to 3600 volts V rrm Ratings (Maximum values at 125°C Tj unless stated otherwise

UBF11

Abstract: PF0002
Contextual Info: c Jù n iu k d t Iubf 11 DU0DI0DE-P2NT0D2 with variable mutual conductance for use as H.P., I.F. or L.F. amplifier DU0DI0DE-P2NTH0DE à pente variable pour utilisation comme amplificatrice H.F., I.Ï.F. ou B.F. DUODIODE-PiSNTHODE mit veränderlicher Steilheit zur