KDS2236 Search Results

KDS2236M

Abstract: KDS2236S marking 4v
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KDS2236M/S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE AFC APPLICATION FOR FM RECEIVER. KDS2236M FEATURES • High Q : Q=70 Min. (f=50MHz). • Low Reverse Current : lR=100nA(Max.) (Vr=4V).

KDS2236M

Abstract: a016 2236a 2236 A
Contextual Info: SEMICONDUCTOR KDS2236M MARKING SPECIFICATION TO-92M PACKAGE 1. Marking method Laser Marking 2. Marking 2236 A 016 No. Item Marking Description 1 Device Name 2236 KDS2236M 2 Polarity A Anode 3 Lot No. 016 00.12.27 Revision No : 00 Year 0 ~ 9 : 2000~2009 16

Contextual Info: SEMICONDUCTOR TECHNI CAL DATA KDS2236M/S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL LANAR DIODE AFC APPLICATION FOR FM RECEIVER. FEATURES • High Q : Q=70 M in. (f=50MHz). • Low Reverse Current : IR=100nA(M ax.) (V R=4V). u DIM M ILLIM ETERS A 3.20 MAX

Contextual Info: KDS2236 Diodes Miscellaneous Diode Semiconductor Material Package StyleDO-35 Mounting StyleT DescriptionAutomatic Frequency Control Diode for FM Receiver

Contextual Info: SEMICONDUCTOR KDS2236M/S TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL LANAR DIODE AFC APPLICATION FOR FM RECEIVER. FEATURES 1998. 6. 15 Revision No : 2 1/2

marking J3 sot23

Abstract: MARKING J3 SOT-23 marking J3 J3 SOT23 MARK J3 KDS2236S J3 SOT sot-23 Marking J3
Contextual Info: SEMICONDUCTOR KDS2236S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking J3 No. 1 Item Marking Device Mark J3 KDS2236S - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

KDS2236S

Abstract: KDS2236M *2236 capacitance
Contextual Info: SEMICONDUCTOR KDS2236M/S TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL LANAR DIODE AFC APPLICATION FOR FM RECEIVER. B A FEATURES High Q : Q=70 Min. (f=50MHz). O F Low Reverse Current : IR=100nA(Max.) (VR=4V). H G M C SYMBOL RATING UNIT Reverse Voltage

KDS2236M

Abstract: KDS2236S 2236A
Contextual Info: KDS2236M/S SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL LANAR DIODE TECHNICAL DATA AFC APPLICATION FOR FM RECEIVER. B A FEATURES ᴌHigh Q : Q=70 Min. (f=50MHz). O F ᴌLow Reverse Current : IR=100nA(Max.) (VR=4V). H G M C MAXIMUM RATING (Ta=25ᴱ)

Contextual Info: SEMICONDUCTOR KDS2236M/S TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL LANAR DIODE AFC APPLICATION FOR FM RECEIVER. B A FEATURES ・High Q : Q=70 Min. (f=50MHz). O F ・Low Reverse Current : IR=100nA(Max.) (VR=4V). H G M C MAXIMUM RATING (Ta=25℃)

KDS2236M

Abstract: KDS2236S st Diode marking EE
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDS2236M/S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE AFC APPLICATION FOR FM RECEIVER. FEATURES • High Q : Q=70 Min. (f=50MHz). • Low Reverse Current : lR=100nA(Max.) ( V r = 4 V ) . MAXIMUM RATINGS (Ta=25°C)

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

KIA78*pI

Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

lc colpitt oscillator

Abstract: FMC-u1 1010E KB8528 S1T8528 S1T8528X01-Q0R0 audio compressor expander IC 8 pin 10.7MHz crystal filter CLO4
Contextual Info: ENHANCED-1 CHIP CT0 RF IC S1T8528 INTRODUCTION S1T8528 is a 1 CHIP RF IC which can be used in high performance CTO CLP systems at max. 60MHz. S1T8528 is designed to include a receiver, PLL and COMPANDER to minimize PCB space requirements. Improved RX characteristics such as inter-modulation,

"RF IC"

Abstract: audio compressor expander IC audio compressor expander IC 8 pin driver ic micom KB8528Q colpitt oscillator design lc colpitt oscillator S41 rectifier 100N 1010E
Contextual Info: Final version 99.4.12 ENHANCED-1 CHIP CT0 RF IC KB8528 INTRODUCTION KB8528 is a 1 CHIP RF IC which can be used in high performance CTO CLP systems at max. 60MHz. KB8528 is designed to include a receiver, PLL and COMPANDER to minimize PCB space requirements. Improved RX characteristics such

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

MB4213

Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Contextual Info: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors

DIODE IN4007

Abstract: IN4007 KDS1555 IN4005 IN4003 IN4004 IN4006 Diode IN4006 IN4001 KDS184S
Contextual Info: 8 Diode KOREA *U nder Development Switching ELECTRONICS CO LTD 45E D • 52SÛ4D4 Temperature Bias Compensation KS8513A-0 V„ FM " fa v V 5 (tnA) 150 (mA) 50 T,*i (mA) 150 MIN (V) 0.63 TYP (V) 0.65 vF MAX (V) 0.68 If (mA) 3 MAX <M) 10 Ik Vr (V) 5 TYP mV/°C

"RF IC"

Abstract: KB8528 SAO1 KDS2236 compressor ic rf ic 25pf varicap rf s25
Contextual Info: ENHANCED-1 CHIP CT0 RF IC KB8528 Characteristic graph CO NTENTS - Current consumption Compressor part Expander part PLL part 1 KB8528 ENHANCED-1 CHIP CT0 RF IC TEST CIRCUIT Vin27 10nF 10uF Vccrx + RAo 390Ω 10.7MHz 0.01uF 0.01uF 500§Ú-1000§Ú S34 1§Ú