KDS165 Search Results

KDS165U

Contextual Info: SEMICONDUCTOR KDS165U MARKING SPECIFICATION USQ PACKAGE 1. Marking method Laser Marking HA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark HA KDS165U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Index

Contextual Info: SEM ICONDUCTOR KDS165U TE CHNICAL DATA silic o n e p ita x ia l p la n a r d io d e ULTRA HIGH SPEED SW ITC H IN G A PPLICATION. FEA T U RE S • Low forward voltage. • Fast reverse recovery time. jjp • Small total capacitance. a t - MAXIMUM RATING Ta=25°C

Contextual Info: SEMICONDUCTOR KDS165U TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Low forward voltage. ・Fast reverse recovery time. ・Small total capacitance. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING UNIT

Contextual Info: S EM IC O N D U C T O R KDS165T TECHNI CAL DATA SI LI CON EPI TAXI AL PLANAR DIODE ULTRA HIGH SPEED SW ITC H IN G A PPLICATION. FEA T U RE S • L ow Forw ard V oltage. • Fast R everse R ecovery T im e. • Sm all T otal C apacitance. DIM A 2.9± 0.2 n B

KDS165U

Abstract: kds165
Contextual Info: SEMICONDUCTOR KDS165U TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Low forward voltage. E M ・Fast reverse recovery time. CHARACTERISTIC SYMBOL RATING UNIT VRM 85 V VR 80 V Maximum Peak Forward Current

KDS165T

Contextual Info: SEMICONDUCTOR KDS165T TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Low Forward Voltage. E Fast Reverse Recovery Time. B Small Total Capacitance. 1 DIM MILLIMETERS _ 0.2 A 2.9 + 4 B 1.6+0.2/-0.1 _ 0.05 0.70 +

Contextual Info: SEMICONDUCTOR KDS165T TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES 2005. 6. 21 Revision No : 0 1/2

Contextual Info: SEM ICONDUCTOR KDS165U TECHNI CAL DATA SI LI CON EPI TAXI AL PLANAR DIODE ULTRA HIGH SPEED SW ITC H IN G A PPLICATION. FEA T U RE S • Low forward voltage. • Fast reverse recovery time. jjp • Small total capacitance. t - a MAXIMUM RATING Ta=25°C CHARACTERISTIC

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor