KDS120 Search Results

Contextual Info: 12 oz Cartridge Product Details Catalog No. KDS120C UPC Code 037103177629 Description Plastic Size 12 oz. Packaging Industrial Bag Literature 5506901A.pdf Low Res. KDS120C_100.jpg Image High Res. KDS120C_300.jpg Image Stock Item Normal Stock Item Package Details Dimensions

KDS120

Contextual Info: SEMICONDUCTOR KDS120 TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : USM. B M M : VF=0.92V Typ. . D J 2 : trr=1.6ns(Typ.). A : CT=2.2pF (Typ.). 3 1 G FEATURES ・Small Package ・Low Forward Voltage ・Fast Reverse Recovery Time

KDS120

Contextual Info: SEMICONDUCTOR KDS120 TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : USM. B M M : VF=0.92V Typ. . : trr=1.6ns(Typ.). SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 * mA Average Forward Current

esm power diodes

Abstract: KDS120E
Contextual Info: SEMICONDUCTOR KDS120E TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.92V Typ. . : trr=1.6ns(Typ.). D H : CT=2.2pF (Typ.). C 3 1 MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + DIM A B G 2 A FEATURES

KDS120

Contextual Info: SEMICONDUCTOR KDS120 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 A3 1 2 Item Marking Description Device Mark A3 KDS120 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KDS120V

Contextual Info: SEMICONDUCTOR KDS120V TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Very Small Package : VSM. Low Forward Voltage : VF=0.92V Typ. . B Fast Reverse Recovery Time : trr=1.6ns(Typ.). H G D 2 : CT=2.2pF (Typ.).

Contextual Info: SEMICONDUCTOR KDS120E TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.92V Typ. . : trr=1.6ns(Typ.). D C H : CT=2.2pF (Typ.). MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + DIM A B G 2 A FEATURES

KDS120E

Contextual Info: SEMICONDUCTOR KDS120E TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.92V Typ. . : trr=1.6ns(Typ.). D 2 H : CT=2.2pF (Typ.). DIM A B C D G A FEATURES ・Small Package ・Low Forward Voltage ・Fast Reverse Recovery Time

KDS120

Contextual Info: SEMICONDUCTOR KDS120 TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : USM. B M M : VF=0.92V Typ. . : trr=1.6ns(Typ.). SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 * mA Average Forward Current

marking a3

Abstract: KDS120E
Contextual Info: SEMICONDUCTOR KDS120E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking A3 No. 2000. 12. 27 Item Marking Description Device Mark A3 KDS120E hFE Grade - - Revision No : 0 1/1

Contextual Info: Caulkmaster 12 oz Semco Type Retainer KDS120R Product Details Catalog No. 102120 UPC Code 037103173478 Fits Tool s PG102120 Specification Size=12 oz./Semco 1 Packaging Industrial Bag Literature Caulkmaster_bro_55157.pdf Low Res. 102120_100.jpg Image High Res.

kds12

Abstract: KDS120V
Contextual Info: SEMICONDUCTOR KDS120V TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E ᴌVery Small Package : VSM. ᴌLow Forward Voltage : VF=0.92V Typ. . B ᴌFast Reverse Recovery Time : trr=1.6ns(Typ.). G D 2 : CT=2.2pF (Typ.).

Contextual Info: SEMICONDUCTOR KDS120 TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES 2008.9. 8 Revision No : 4 1/2

PACKAGE usm

Abstract: KDS120
Contextual Info: K E G SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KDS120 SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • • • • Small Package Low Forw ard Voltage F ast Reverse Recovery Time Small Total Capacitance : USM.

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

KIA78*pI

Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

transistor SMD s72

Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Contextual Info: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

S78DM12Q

Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
Contextual Info: 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power

MB4213

Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Contextual Info: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors

KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION

MMBD1402

Abstract: SMD4148 MMBD1502 KDS184 1N4148WS 1N4150W 1N4151W 1N4448W BAV19W BAV21W
Contextual Info: Surface Mount Switching Diodes Part No. Forward Voltage @ IF mA Pd (mW) Io(mA) VRRM (V) VF (V) IR(µA) CD ( PF) TR R (ns) 7"/13" Reel A2 UF 200 - 150 100 100 80 1.0 @ 10 1.2 @ 100 5 @ 75 0.5 @ 80 4 3 4 4 3000/10000 A2 A4 A5 A8 A80 A82 400 410 410 500 410