KDS112 Search Results
KDS112 Datasheets (6)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| KDS112 | Korea Electronics | Band Switch Diode | Original | 64.76KB | 2 | ||
| KDS112 | Korea Electronics | Band Switch Diode | Original | 64.8KB | 2 | ||
| KDS112 | Korea Electronics | SILICON EPITAXIAL TYPE DIODE | Scan | 129.98KB | 2 | ||
| KDS112E | Korea Electronics | Band Switch Diode | Original | 63.29KB | 2 | ||
| KDS112E | Korea Electronics | Band Switch Diode | Original | 61.25KB | 2 | ||
| KDS112V | Korea Electronics | Band Switch Diode | Original | 64.03KB | 2 |
KDS112 Price and Stock
Phoenix Contact MKDS-1/12-3-81PCB terminal block - nominal current: 13.5 A - rated voltage (III/2): 200 V - nominal cross section: 1.5 mm² - pitch: 3.81 mm - number of positions: 12 - connection method: Screw connection with tension sleeve - mounting: Wave soldering - conductor/PCB connection direction: 0 ° - color: green - Pin layout: Linear pinning - Solder pin [P]: 3.5 mm |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MKDS-1/12-3-81 | 200 |
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Phoenix Contact MKDS-1/12-3-5PCB terminal block - nominal current: 13.5 A - rated voltage (III/2): 200 V - nominal cross section: 1.5 mm² - pitch: 3.5 mm - number of positions: 12 - connection method: Screw connection with tension sleeve - mounting: Wave soldering - conductor/PCB connection direction: 0 ° - color: green - Pin layout: Linear pinning - Solder pin [P]: 3.5 mm |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MKDS-1/12-3-5 | 34 |
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Phoenix Contact MKKDS-1/12-3-5PCB terminal block - nominal current: 8 A - rated voltage (III/2): 200 V - nominal cross section: 1 mm² - pitch: 3.5 mm - number of positions: 12 - connection method: Screw connection with tension sleeve - mounting: Wave soldering - conductor/PCB connection direction: 0 ° - color: green - Pin layout: Linear pinning - Solder pin [P]: 3.5 mm |
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MKKDS-1/12-3-5 |
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Phoenix Contact SMKDS-1/12-3-81PCB terminal block - nominal current: 10 A - rated voltage (III/2): 200 V - nominal cross section: 1 mm² - pitch: 3.81 mm - number of positions: 12 - connection method: Screw connection with tension sleeve - mounting: Wave soldering - conductor/PCB connection direction: 35 ° - color: green - Pin layout: Linear pinning - Solder pin [P]: 3.5 mm |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SMKDS-1/12-3-81 |
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Buy Now | ||||||||
Phoenix Contact MKKDS-1/12-3-81PCB terminal block - nominal current: 8 A - rated voltage (III/2): 200 V - nominal cross section: 1 mm² - pitch: 3.81 mm - number of positions: 12 - connection method: Screw connection with tension sleeve - mounting: Wave soldering - conductor/PCB connection direction: 0 ° - color: green - Pin layout: Linear pinning - Solder pin [P]: 3.5 mm |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MKKDS-1/12-3-81 |
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Buy Now | ||||||||
KDS112 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
MARKING BF
Abstract: KDS112E
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Original |
kds112emarking bf | |
KDS112Contextual Info: SEMICONDUCTOR KDS112 TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE VHF TUNER BAND SWITCH APPLICATIONS. FEATURES ᴌSmall Package. ᴌSmall Total Capacitance : CT=1.2pF Max. . ᴌLow Series Resistance : rS=0.6ή(Typ.). E M B M D J 3 1 G A 2 MAXIMUM RATING (Ta=25ᴱ) |
Original |
kds112100mhz | |
KDS112VContextual Info: SEMICONDUCTOR KDS112V TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE VHF TUNER BAND SWITCH APPLICATIONS. FEATURES ᴌVery Small Package. ᴌSmall Total Capacitance : CT=1.2pF Max. . ᴌLow Series Resistance : rS=0.6ή(Typ.). E B D G 1 3 K H A 2 MAXIMUM RATING (Ta=25ᴱ) |
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kds112v100mhz | |
KDS112Contextual Info: SEMICONDUCTOR KDS112 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 BF 1 2 Item Marking Description Device Mark BF KDS112 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method |
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kds112 | |
KDS112E
Abstract: transistor ESM 30
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kds112e100mhztransistor esm 30 | |
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Contextual Info: SEMICONDUCTOR KDS112E TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE VHF TUNER BAND SWITCH APPLICATIONS. FEATURES ᴌSmall Package. ᴌSmall Total Capacitance : CT=1.2pF Max. . ᴌLow Series Resistance : rS=0.6ή(Typ.). E B D G C H A 2 DIM A B 3 1 MILLIMETERS |
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kds112e100mhz | |
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Contextual Info: SEM ICONDUCTOR KDS112V TECHNI CAL DATA SI LI CON EPI TAXI AL T Y PE DIODE V HF T U N E R BAND SWITCH APPLICATIO NS. FEA T U RE S • V ery Small Package. • Small Total Capacitance : C -^ l^ p F iM a x . . • Low Series Resistance : rs=0.6Q T yp.). DIM |
OCR Scan |
kds112v100mhz | |
KDS112EContextual Info: SEMICONDUCTOR KDS112E TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE VHF TUNER BAND SWITCH APPLICATIONS. FEATURES ・Small Package. ・Small Total Capacitance : CT=1.2pF Max. . ・Low Series Resistance : rS=0.6Ω(Typ.). E B D DIM A B C D G H A 2 3 1 MAXIMUM RATING (Ta=25℃) |
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kds112e100mhz | |
MARKING BF
Abstract: KDS112V
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Original |
kds112v100mhzmarking bf | |
KDS112
Abstract: USM NO-0 MARKING BF
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kds112100mhzusm no-0marking bf | |
transistor ESM 30
Abstract: KDS112E
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Original |
kds112e100mhztransistor esm 30 | |
KDS112Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR VHF TUNER BAND SWITCH TECHNICAL DATA KDS112 SILICON EPITAXIAL TYPE DIODE APPLICATIONS. FEATURES • Small Package. • Small Total Capacitance : Gr=1.2pF Max. . • Low Series Resistance : rs=0.6ß (Typ.). MAXIMUM RATINGS (Ta=25°C) |
OCR Scan |
kds112100mhz | |
KDS112Contextual Info: SEMICONDUCTOR KDS112 TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE VHF TUNER BAND SWITCH APPLICATIONS. FEATURES ・Small Package. ・Small Total Capacitance : CT=1.2pF Max. . ・Low Series Resistance : rS=0.6Ω(Typ.). E M B M D J 3 1 G A 2 UNIT Reverse Voltage |
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kds112100mhz | |
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Contextual Info: SEMICONDUCTOR KDS112V TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE VHF TUNER BAND SWITCH APPLICATIONS. FEATURES ・Very Small Package. ・Small Total Capacitance : CT=1.2pF Max. . ・Low Series Resistance : rS=0.6Ω(Typ.). E B D G H A 2 1 K 3 MAXIMUM RATING (Ta=25℃) |
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kds112v100mhz | |
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
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hig86-755-3679515alternator diode 1776 b2az marking transistor sot-23smd sot23 transistor mark y2+7 | |
khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
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2n2904ebc859kds135s2n2906e+16 | |
KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
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2n2904ebc859kds135s2n2906e+16 | |
MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
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mn1280kgt50n60kdabc547 smd transistorkia1117af+6 | |
transistor SMD s72
Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
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ot323bc818wmun5131t1bc846a+12 | |
oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
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kia7900pitc7sh04fukic7sh04fusc604+16 | |
MB4213
Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
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ssip-12kia6283kkia7217apssip-10+13 | |
KF6N60
Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
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usfb053usfb13usfb13ausfb13l+16 | |