KDR367 Search Results

KDR367E

Contextual Info: SEMICONDUCTOR KDR367E TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. FEATURES E C G 1 G A ・Small Package : ESC. B CATHODE MARK ・Low Forward Voltage : VF 2 =0.23V (Typ.) 2 MAXIMUM RATING (Ta=25℃) D CHARACTERISTIC SYMBOL RATING

KDR367

Contextual Info: SEMICONDUCTOR KDR367 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. K L A H F ・Small Package : USC. 1 E ・Low Forward Voltage : VF 2 =0.23V (Typ.) G B CATHODE MARK FEATURES 2 J D C I MAXIMUM RATING (Ta=25℃) CHARACTERISTIC

KDR367

Contextual Info: SEMICONDUCTOR KDR367 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. L K A H F ᴌSmall Package : USC. 1 E ᴌLow Forward Voltage : VF 2 =0.23V (Typ.) G B CATHODE MARK FEATURES 2 J D C I MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC

KDR367

Contextual Info: SEMICONDUCTOR KDR367 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. K L A H F ・Small Package : USC. 1 E ・Low Forward Voltage : VF 2 =0.23V (Typ.) G B CATHODE MARK FEATURES 2 J D C I MAXIMUM RATING (Ta=25℃) CHARACTERISTIC

marking e1 diode

Abstract: marking JB diode marking eB diode marking E1 diode marking ja diode marking jb e2 marking E2 marking diode J1 marking JB marking transistor
Contextual Info: SEMICONDUCTOR KDR367 MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking US 0 1 2 1 No. Item Marking Description Device Mark US KDR367 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KDR367E

Contextual Info: KDR367E SEMICONDUCTOR TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. J. FEATURES • Low Forw ard Voltage : V f 2 =0 .23 V (Typ.) • Small Package : ESC. J Lp MAXIMUM RATINGS (Ta=25°C) DIM CHARACTERISTIC SYMBOL Maximum (Peak) Reverse Voltage

KDR367E

Abstract: PAD DIMENSION
Contextual Info: SEMICONDUCTOR KDR367E TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. FEATURES 1 A Small Package : ESC. E C B CATHODE MARK Low Forward Voltage : VF 2 =0.23V (Typ.) 2 MAXIMUM RATING (Ta=25 ) D F CHARACTERISTIC SYMBOL RATING UNIT

KDR367E

Contextual Info: SEMICONDUCTOR KDR367E MARKING SPECIFICATION ESC PACKAGE 1. Marking method Laser Marking 2. Marking US No. 2001. 3. 9 Item Marking Description Device Mark UL KDR367E Revision No : 0 1/1

KDR367

Contextual Info: SEMICONDUCTOR KDR367 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. K L A H F Small Package : USC. 1 E Low Forward Voltage : VF 2 =0.23V (Typ.) G B CATHODE MARK FEATURES 2 J D MAXIMUM RATING (Ta=25 CHARACTERISTIC C I ) SYMBOL

Contextual Info: SEMICONDUCTOR KDR367E TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. Small Package : ESC. E C 1 A Low Forward Voltage : VF 2 =0.23V (Typ.) B CATHODE MARK FEATURES 2 MAXIMUM RATING (Ta=25 ) D F CHARACTERISTIC SYMBOL RATING UNIT

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

KIA78*pI

Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

MB4213

Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Contextual Info: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors

KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION