KDB2570 Search Results

KDB2570 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
KDB2570		Kexin	N-Channel PowerTrench MOSFET	Original	PDF	48.73KB	2
KDB2570		TY Semiconductor	N-Channel PowerTrench MOSFET - TO-263	Original	PDF	147.62KB	2

KDB2570 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SMD Type Product specification KDB2570 FDB2570 TO-263 Features RDS(ON) = 90 m @ VGS = 10 V +0.1 1.27-0.1 22 A, 150 V. RDS(ON) = 80 m @ VGS = 6 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 High performance trench technology for extremely	Original	KDB2570 FDB2570) O-263	PDF
FDB2570 Abstract: KDB2570 Contextual Info: MOSFET SMD Type 150V N-Channel PowerTrench MOSFET KDB2570 FDB2570 TO-263 Features RDS(ON) = 90 m @ VGS = 10 V +0.1 1.27-0.1 22 A, 150 V. RDS(ON) = 80 m @ VGS = 6 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 High performance trench technology for extremely	Original	KDB2570 FDB2570) O-263 FDB2570	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: SMD Type Product specification KDB2570 FDB2570 TO-263 Features RDS(ON) = 90 m @ VGS = 10 V +0.1 1.27-0.1 22 A, 150 V. RDS(ON) = 80 m @ VGS = 6 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 High performance trench technology for extremely

Original

KDB2570 FDB2570) O-263

PDF

FDB2570

Abstract: KDB2570
Contextual Info: MOSFET SMD Type 150V N-Channel PowerTrench MOSFET KDB2570 FDB2570 TO-263 Features RDS(ON) = 90 m @ VGS = 10 V +0.1 1.27-0.1 22 A, 150 V. RDS(ON) = 80 m @ VGS = 6 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 High performance trench technology for extremely

Original

KDB2570 FDB2570) O-263 FDB2570

PDF