KD TRANSISTOR Search Results

Contextual Info: International IÖR Rectifier PD - 91688 IRG4PSH71 KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins

Contextual Info: International IÖR Rectifier PD - 91684 IRG4PSC71 KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins

D-42

Abstract: KD221275A7 reverse forward control diagram KD221K75 kd221275a kd2212
Contextual Info: mmn sK KD 221275A 7 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 DUcil DdfHnCjtOn T ran sis to r M o d u le 75 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

AN80T07

Abstract: ic901 KD-SC900R AN80T sc900r audio output TRANSISTOR NPN
Contextual Info: KD-SC900R 4.2 AN80T07 IC901 : Regulator • Block diagram MODE1 ACC NC 6 3 5 *ASO, Peak Current Protection. *Thermal Protection (Except VDD, Comp output). Outputs Reference Voltage Pre Drive Pre Drive Pre Drive EXT Out Pre Drive ANT Out 15 14 ILM 10V 11

955 100 12 LAO

Abstract: MPS6571 MPS-6571
Contextual Info: MPS6571 silicon NPN SILICON ANNULAR TRANSISTOR NPN SILICON AMPLIFIER TRANSISTOR . designed for pream plifiers in a u d io am plifier applications. • C olle cto r-E m itte r B re a kd ow n V oltage - • L o w N o ise Figure — N F = 1.2 d B (T yp) @ le = 1 00 ß A d c

2T31

Contextual Info: r - 3 3 - Z ^ f P ow er Transistors BUX37 HARRI S File N um ber SEMI COND SECTOR S7E D B M3 Q2 2 7 1 QQE0 2 5 4 M »HAS 15-Ampere N-P-N Monolithic Darlington Power Transistor TERMINAL DESIGNATIONS 400 V , 35 W Gain of 20 at 15A F ea tu res: • H ig h vo ltag e b re a kd o w n

2SC3873

Contextual Info: Power Transistors 2SG3873 2S C 3873 Silicon PNP Triple-Diffused Planar Type P a c k a g e D im e n s io n s H igh B re a kd o w n V o lta g e , H igh S p e e d S w itch in g Unit ' mm • F e a tu re s 5.2max. 15.5max 6.9min • High speed switching 3.2 • High collector-base voltage V cbo

DG37MS

Abstract: CD40488 15-V CD4048B DG37
Contextual Info: HARRIS SEMICOND 44E D SECTOR H I 4 3 Q 2 2 7 1 QQ3745fe. 2 « ¡ H A S r-V3'Z/ HARRIS CD4048B Types C M O S Multifunction Expandable 8-Input Gate BINARY CONTROL INPUTS 'FONCTION co ntr ol 3-STATE * x b *t Kd , CONTROL I I I r H igh-Voltage Types 2 0 -V o lt Rating

BC461

Abstract: JCASE BC441
Contextual Info: BC 394 THERMAL DATA The rm a l resistance ¡u n ctio n -ca se The rm a l resistance ju n c tio n -a m b ie n t V BR CBO C o lle cto r-b a se b re a kd o w n voltage 0e =0) l c = 100 V CEO (sus)* C o lle c to r-e m itte r sustaining voltage Ob = 0 ) V(BR)EBO E m itte r-b a se

KD221203A7

Abstract: KD524505 KD221404 KD225575 KD321408 kd424520 KD721KA1 kd2212 KD7245A1 kd221
Contextual Info: D 0 111E R E X t>4E J> INC rnmenex m 72T4L21 0 0 0 b 5 4 ci D b4 * P R X Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 DARLINGTON TRANSISTOR MODULES (Continued)

pwm INVERTER welder

Abstract: KD224510 250A darlington transistor Kd224515 powerex snubber capacitor inverter welder circuit kd2245 kd224510 application note KD221K75 transistor
Contextual Info: W U IfB tE K Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Darlington Transistor Modules Application Information 2.7 Reverse Transistor Action and dv/dt Turn-on A problem that occurs with the half-bridge circuit configuration fed

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

Contextual Info: Æ T SGS-THOMSON D lsi S IIL[lCTIs! iD©S BCW30 SMALL SIGNAL PNP TRANSISTORS Type M arking B C W 30 C2 . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . LOW LEVEL AUDIO AMPLIFICATION AND

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - AUGUST 1995 BCP54 O FEATURES * S u ita b le fo r AF d riv e rs a nd o u tp u t stages * H igh c o lle c to r c u rre n t and L o w VCE sat| CO M PLEM ENTAR Y TYPE PARTM ARKING DETAILS - BCP51 BCP54

ULN-2082A

Abstract: ULN-2081 ULN2081A
Contextual Info: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE. 13 1 • Ü50433Ö S E M I C O N D S / ICS QQQ3ÔE1 ñ ■ AL6R 9 3 D 0 3 8 2 1 3> ULN-2081A AND ULN-2082A GENERAL-PURPOSE HIGH-CURRENT TRANSISTOR ARRAYS ULN-2081 A AND ULN -2082A GENERAL-PURPOSE HIGH-CURRENT TRANSISTOR ARRAYS

Contextual Info: SGS-THOMSON RfflD0lsi i[LiCTI3®[i!lDS$ BCP55/56 MEDIUM POWER AMPLIFIER AD VA N C E DATA . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL

Contextual Info: SGS-THOMSON RfflD0lsi i[LiCTI3®[i!lDS$ BCP52/53 MEDIUM POWER AMPLIFIER AD VA N C E DATA . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL

Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT560 ISSUE 1 - NOVEMBER 1998 FEATURES * 500 V o lt VCE0 * 150m A c o n tin u o u s c u rre n t * Ptot = 2 W a tt PARTM ARKING D E T A IL - X <VC FZT560 ABSOLUTE M AXIM UM RATINGS. PARAMETER VALUE UNIT VcBO

Contextual Info: rz7 Ä T# SGS-m0MS0N bcs57 r a o e œ iiL iie r a * ® BC858 SMALL SIGNAL PNP TRANSISTORS Type M a rk in g B C 8 57 A 3E B C 857B 3F B C 8 58 A 3J B C 858B 3K . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING

Contextual Info: Æ T SGS-THOMSON D lsi S IIL[lCTIs! iD©S BC847 SMALL SIGNAL NPN TRANSISTORS Type M arking B C 847B 1F . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . LOW LEVEL GENERAL PURPOSE . PNP COMPLEMENT IS BC857

cb 10 b 60 kd

Abstract: 2N4126
Contextual Info: TOSHIBA 2N4126 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - Iqbo -50nA Max. @ Vqb _ -20V - I^bo = -50nA (Max.) @ V^g = -3V • Low Saturation Voltage - VQE(satj = -0.4V (Max.) @ lc = -50mA, lB = -5mA

Transistors K 903

Abstract: MPS3827 MPS3826
Contextual Info: MPS3826 SILICON MPS3827 NPN SILICON NPN SILICO N A N N U L A R TRANSISTORS A M PLIFIER TRANSISTORS . . designed fo r use in general-purpose am plifier applications. C ollector Em itter Breakdown Voltage — B V c E O = 45 Vdc (Min) @ lc = 10 mAdc High Current-Gain— Bandwidth Product —

2SK2610

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2610 SILICON N CHANNEL MOS TYPE /T-MOSIII DATA (2SK2610) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE

Contextual Info: PD - 91729 International I R Rectifier IRG4ZH71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10 as, VCc = 7 2 0 V , T j = 125°C,