KD 116 TRANSISTOR Search Results

AP-125

Abstract: 8XC196KC 8XC196KC chapter 5 interrupts 8XC196KC instruction set AD0-AD15 kd 116 transistor A0123-B0 8XC196KC/KD
Contextual Info: Minimum Hardware Considerations il CHAPTER 11 MINIMUM HARDWARE CONSIDERATIONS The 8XC196KC/KD has several basic requirements for operation within a system. It requires an external source of power, ground, the clock signal, and the RESET# signal. This chapter describes options for providing the basic requirements and describes other hardware

ztx653

Abstract: 2TX650 SE 130 ztx651 ZTX652 ztx650
Contextual Info: NPN Silicon Planar Medium Power Transistors Z T X 650 ZTX651 ZTX652 ZTX653 FEATURES • 1 .5 W p o w e r d issipation a t T amb = 2 5 ° C * • 2 V co n tinu o u s ic • Excellent gain ch a ra cte ristics to 2A • High V CE0: up to 10 0 V • L o w sa tu ra tio n voltages

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX718 ISSUE 4 - MAY 1998_ FEATURES * 6 A Peak pulse c u rre n t * E xce lle n t h FE c h a ra cte ristics up to 6 A pulsed * lo w s a tu ra tio n v o lta g e * lc C ont 2.5A

CERAMIC CHIP CARRIER LCC 68 socket

Abstract: INTEL 24 PIN CERAMIC DUAL-IN-LINE PACKAGE LCCs 68 socket ic 7912 64 ceramic quad flatpack CERAMIC PIN GRID ARRAY CPGA lead frame CERAMIC LEADLESS CHIP CARRIER LCC 32 socket PCB footprint cqfp 132 Single Edge Contact (S.E.C.) Cartridge: 7912 pin configuration
Contextual Info: Introduction 1.1 1 Overview Of Intel Packaging Technology As semiconductor devices become significantly more complex, electronics designers are challenged to fully harness their computing power. Today’s products can feature more than seven million transistors and device count is expected to increase to 100 million by the year 2000. With a

2N6701

Abstract: s parameters 4ghz HXTR-5101 4ghz s parameters transistor S21E 4ghz transistor n HPAC-100
Contextual Info: m COM PONENTS LINEAR POWER TRANSISTOR 2N6701 HXTR-5101 Features H IG H P 1dB LIN E A R PO W ER 23 dBm Typical at 2 G Hz 22 dBm Typical at 4 G Hz BIPOLAR 1.0 '0.041 TYP TRANSISTORS HEW LETT W , PACKARD H IG H P1dB G A IN 13 dB Typical at 2 G Hz 7.5 dB Typical at 4 GHz

x5 sot89

Abstract: QBCX51 8CX53
Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - FEBRUARY 1996_ C O M P L E M E N T A R Y TYPE - BCX51 BCX52 BCX53 Q BCX51 - B C X54 B C X 5 2 - B C X55 B C X 5 3 - B C X56 P A R T M A R K I N G D E T A IL S BCX5 1 -A A BCX52 -A E BCX53

transistor AC 237

Abstract: AA24
Contextual Info: calodic Improved Low Cost Triple CRT Driver CORPORATION CVA2411TX FEATURES DESCRIPTION • • • • • The CVA2411TX is an improved low cost version that features excellent gray scale linearity with no crossover distortion and less EMI for 69kHz horizontal scanning frequency monitors.

Contextual Info: IN TE G R A TE D CIRCUITS nlEET TDA5744; TDA5745 Low power mixers/oscillators for hyperband tuners 1998 Mar 09 Preliminary specification File under Integrated Circuits, IC02 Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification

317A-01

Abstract: 2G0909
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line fj 4 .5 G H z @ 1 0 m A HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR d e s ig n e d p r i m a r i l y f o r u s e in M A T V / C A T V a m p li f i e r s a n d o t h e r NPN SILICO N b r o a d b a n d lin e a r a p p lic a t io n s d e m a n d in g h ig h p o w e r g a in w i t h lo w

capacitor 330 j38

Abstract: Rogers 6010.5
Contextual Info: an A M P company Wireless Bipolar Power Transistor, 60W 1450- 1550 MHz PH1516-60 V2.00 _ 16.51 ’630 Features • • • • • • _ .4 0 0 _ (10.16) D esigned for l.inear Am plifier A pplications Class AB: -30 dBc Typ 3rd IMD at 60 W atts PKP Class A: + 5 3 dBm Typ 3rd O rd e r In te rc e p t Point

MHQ3467

Abstract: 2N3467
Contextual Info: MHQ3467 silicon QUAD D UAL-IN-LIN E PNP HERMETIC SILICON ANNULAR M EM ORY D R IV E R TRANSISTORS QUAD D UAL-IN-LIN E PNP SILICON M EM ORY DRIVE R TRANSISTORS . . . designed fo r m edium -current, high-speed switching, ferrite core and plated w ire mem ory driver, and MOS translator applications.

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

K9520-55

Abstract: k952
Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor L o g i c level F E T G E N E R A L DE SCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope using ’t r e n c h ’

16G040-2C

Abstract: 16G040-2L 16G040-2X QODQ544 control logic 24 lags Phase Locked loop IC to drive VCO Fiber Optic regenerator 28 16G040
Contextual Info: TEKTRONIX INC/ TRI ÛU I N T fiRObSlfi Q Q G Q S m 2bE D T -s { Ê M L Î G ig a B it L o g ic TRÛ 7 o-.n 16G040 High Speed Clock & Data Recovery Circuit 2.0 Gbit/s NRZ Data Rate FEATURES Clock recovery and data retiming and regeneration subsystem 2.0 Gbit/s performance

"frequency comparator"

Contextual Info: TEKTRONIX INC/ TRI ÛUINT 2bE D B 0^0^210 QQG0541 7 Ö T R Ö 'T '- S O - J 1 G ig a B it L o g ic 16G040 High Speed Clock & Data Recovery Circuit 2.0 Gbit/s NRZ Data Rate FEATURES Clock recovery and data retiming and regeneration subsystem 2.0 Gbit/s performance

intel packaging

Abstract: CERAMIC PIN GRID ARRAY CPGA lead frame CERAMIC CHIP CARRIER LCC 68 socket INTEL 24 PIN CERAMIC DUAL-IN-LINE PACKAGE PLCC 68 intel package dimensions 68 CERAMIC LEADLESS CHIP CARRIER LCC INTEL CDIP 40 PIN INTEL PLCC 68 dimensions tape tsop Shipping Trays QFP Shipping Trays
Contextual Info: 2 1 Introduction 1/20/97 6:22 PM CH01WIP.DOC INTEL CONFIDENTIAL until publication date 2 CHAPTER 1 INTRODUCTION 1.1. OVERVIEW OF INTEL PACKAGING TECHNOLOGY As semiconductor devices become significantly more complex, electronics designers are challenged to fully harness their computing power.Today’s products can feature more than

ZTX752 equivalent

Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request

Contextual Info: STD29NF03L N-CHANNEL 30V - 0.017 n - 29A DPAK LOW GATE CHARGE STripFET POWER MOSFET PRELIMINARY DATA TYP E STD29NF03L . . . . . V dss 30 V R dS oii < 0.0 2 2 Q. Id 29 A TYPICAL RDS(on) =0.017 £2 TYPICAL Qg = 1 8nC @ 10V OPTIMAL RDs(on)xQg TRADE-OFF CONDUCTION LOSSES REDUCED

Contextual Info: OPA313 OPA2313 OPA4313 www.ti.com SBOS649C – SEPTEMBER 2012 – REVISED MARCH 2013 1-MHz, Micro-Power, Low-Noise, RRIO,1.8-V CMOS OPERATIONAL AMPLIFIER Precision Value Line Series Check for Samples: OPA313, OPA2313, OPA4313 FEATURES DESCRIPTION • • •

UEI 20 SP 010

Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
Contextual Info: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"

16G040-2C

Abstract: 16G040-2L 16G040-2X Fiber Optic regenerator 28 Gigabit Logic
Contextual Info: G I G A B I T LO GI C INC IGBLI G ig a B it ITE D QQ 02 QQÌ 5 • 16G040 T '-7S'H -Z £i L o g ic High Speed Clock & Data Recovery Circuit 2.0 Gbit/s NRZ Data Rate FEA TU R ES Clock recovery and d a ta retiming and regeneration subsystem on a chip 2 .0 Gbit/s perform ance with ext. clock source;

12FL

Abstract: B350067
Contextual Info: , i - SPECIFICATION FOR APPROVAL CUSTOMER DESCRIPTION DIMENSIONS MODEL P/N APPROVED NO APPROVED BY j DC BRUSHLESS BLOWER 35X35X7 mm GB0535ADB2-8 M AUTHORIZED . ¡. 89 2 2 1 DAWN 'pdaacf 12lt5 C H KD SPEC. NO. ISSUE DATE EDITION REVISE DATE E.SPEC B350067

INVP inverter

Contextual Info: October 1989 PRELIMINARY OPEN ASIC DATA SHEET RADIATION TOLERANT LIBRARY MBRT GATE ARRAY SERIES - 2\xJ2 METAL LAYERS MB 0850RT - MB 1300RT - MB 2000RT - MB 2700RT - MB 3200RT MB 4000RT - MB 5000RT - MB 6600RT - MB 7500RT FEATURES ON CHIP SPECIAL FUNCTION - test mode

12FL

Abstract: UL3265
Contextual Info: SUNON SPECIFICATION FOR APPROVAL CUSTOMER DESCRIPTION DC BRUSHLESS BLOWER DIMENSIONS 35X35X6 mm M O D E L GB0535AEBI-8 P/N M APPROVED NO APPROVED BY AUTHORIZED DAWN. 'fyacÁM 3¡30 CH KD. SPEC. NO. ISSUE DATE EDITION REVISE DATE E.SPEC B350071 03.03.1999