KCS2 Search Results

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Abstract: TC58F401
Contextual Info: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58F400F / FT - 90, - 1 0 TC58F401F / FT - 90, - 1 0 SILICON GATE CMOS TENTATIVE DATA 4M 524,288 W O RD S x 8 BITS/262,144 W ORDS x16 BITS CMOS FLASH M EM O RY DESCRIPTION

TC58128FT

Abstract: TC58128FTI TOSHIBA cmos memory -NAND
Contextual Info: TOSHIBA TC58128FTI TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 128-MBIT 16M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58128 is a single 3.3-V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes X 32 pages X 1024 blocks.

TH58512FT

Contextual Info: TOSHIBA TH58512FT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 512-MBIT 64M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TH58512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes X 32 pages X 4096 blocks.

Contextual Info: TO SHIBA TH 50VSF1420/1421AAXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE DESCRIPTION The TH50VSF1420/1421AAXB is a package of mixed 2,097,152-bit SRAM and 16,777,216-bit FLASH memory. The SRAM and FLASH memory organized 262,144 words by 8 bits SRAM and 1,048,576

toshiba NAND ID code

Contextual Info: TC5816BFT TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC5816 device is a single 5.0-volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. The device is organized as 264 byte X

HA 4016

Abstract: KC08 70hmr
Contextual Info: TOSHIBA TH58512FT TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CM O S 512-MBIT 64M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TH58512 is a single 3.3-V 512-Mbit (553.648.128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes X 32 pages X 4096 blocks.

SmartMedia Logical Format

Abstract: TH58V128DC
Contextual Info: TOSHIBA TENTATIVE TH58V128DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128 Mbit 16 M x 8 bit CMOS NAND E2PROM (16M BYTE Sm artM edia ) DESCRIPTION The TH58V128DC device is a single 3.3 volt 128 M (138,412,032) bit NAND Electrically Erasable and

TH58V128FT

Abstract: TH58
Contextual Info: TOSHIBA TH58V128FT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 128 Mbit 16 M X 8 bit CMOS NAND E2PROM DESCRIPTION The TH58V128 device is a single 3.3 volt 128 M (138,412,032) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPR O M ) organized as 528 bytes X 32 pages X 1024 blocks.

SmartMedia Logical Format

Abstract: TC58V64DC
Contextual Info: TOSHIBA TC58V64DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64 Mbit 8 M x 8 bit CMOS NAND E2PROM (8M BYTE Sm artM edia ) DESCRIPTION The TC58V64DC device is a single 3.3 volt 64 M (69,206,016) bit NAND Electrically Erasable and

cd4009 hex inverter ic

Abstract: AN-6539 6C04069
Contextual Info: G E SOLID STATE Dl D E | 3fl7S0fll DOlBa^a 1 j : 01E 13292_ D -, 3875081 G E SOLID STATE CD4069UB Types CMOS Hex Inverter Features: High-Voltage Types 20-Volt Rating The RCA-CD4069UB types consist of six CMOS Inverter circuits. These devices are intended fo r all general-purpose Inverter

KCS10

Contextual Info: NCP1605 Product Preview Enhanced, High Voltage and Efficient Stand−by Mode, Power Factor Controller The NCP1605 is a controller that exhibits near−unity power factor while operating in fixed frequency, Discontinuous Conduction Mode or in Critical Conduction Mode.

CD4049 ic 16 pin diagram

Abstract: CD4050 ic 16 pin diagram cd4049a IC CD4049 schematic diagram inverter 72 volt input TEA1043 CD4050A CD4049 CD4069 CD4050 pin diagram
Contextual Info: CD4049A, CD4050A Types CMOS Hex Buffer/Converters R E C O M M E N D E D O P E R A T IN G C O N D IT IO N S at T A = 2 5 ° C , Except as N oted. CD 4049A -ln verting Type CD 4050A —Non-Inverting Type For m axim um reliab ility, nom inal operating conditions should be selected so that

NCP1605G

Contextual Info: NCP1605, NCP1605A, NCP1605B Enhanced, High Voltage and Efficient Standby Mode, Power Factor Controller http://onsemi.com The NCP1605 is a controller that exhibits near−unity power factor while operating in fixed frequency, Discontinuous Conduction Mode DCM or in Critical Conduction Mode (CRM).

Contextual Info: NCP1605, NCP1605A Enhanced, High Voltage and Efficient Standby Mode, Power Factor Controller The NCP1605 is a controller that exhibits near−unity power factor while operating in fixed frequency, Discontinuous Conduction Mode DCM or in Critical Conduction Mode (CRM).

Contextual Info: TO SHIBA TH 50VSF0400/0401ACXB TOSHIBA MULTI CHIP INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS SRAM AND FLASH M EM O RY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF0400/0401ACXB is a m ixed containing a package 1,048,576-bit SRAM an d a 16,777,216-bit flash m em ory. The SRAM is organized as 131,072 words by 8 b its and the flash memory

Contextual Info: T O S H IB A TENTATIVE TC5816BDC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E^PROM DESCRIPTION The TC5816 device is a single 5.0-volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. The device is organized as 264 bytes

TSOP 48 Package nand memory

Abstract: TC58256FT TSOP 48 Package nand memory toshiba
Contextual Info: TOSHIBA TC58256FT TO SHIBA M OS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 256-MBIT 32M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58256 is a single 3.3-V 256-Mbit (276,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes X 32 pages X 2048 blocks.

CD4511B

Contextual Info: CD4511B Types CMOS BCD-to-7-Segment Latch Decoder Drivers High-Voltage Types 20-V o lt Rating a / c* 3 H 5 b 1 B 9 B 2 3 4 5 6 7 lc / sT The CD4511B types are BCD-to-7-segment latch decoder drivers con structe d w ith CMOS logic and n-p-n bipolar transistor out­

TCS4H

Abstract: TC57H1024D EPROM 40PIN A150
Contextual Info: ' :!i; 1 M EGA B IT 6 5 , 5 3 6 W O R D X 1 6 B IT C M O S O N E T IM E PRO G RAM M ABLE READ O NLY M EM ORY D E S C R IP T IO N The TC54H1024P/F is a 65,536 word X 16 b it one tim e program m able read only memory, and m olded in a 40 pin plastic package.

A-102

Abstract: TC57 TC57H1025AD-70 TC57h1025 A106 tvs A12o
Contextual Info: r t f'fTJoiriit’ r ii tf ln r î » TC57H1 1 M EG A BIT 65,536 W O R D x 16 BIT HIGH SPEED CMOS U.V. ERASABLE AND ELECTRICALLY PR O G RAM M A BLE READ ONLY M EM O RY DESCRIPTION T h e TC57H1025AD is a 65,536 word X 16 b it h ig h speed CMOS u ltra v io le t lig h t e rasa b le and

SOP40 eprom

Abstract: A120 TC544096P TC574096D 371AL 62SV
Contextual Info: iSiii h f’fTt î iiS ïÜ IS 4 M E G A BIT 262,144 W 0 R D x 1 6 BIT C M O S O N E T IM E P R O G R A M M A B L E R EA D O N L Y M E M O R Y D ESCRIPTIO N The TC544096P/F is a 262,144 word X 16 b it CMOS one tim e program m able read only memory. The TC544096P/F is JE D E C stan d ard pin configuration.

proton rx 4000 watts power amplifier circuit diagram

Abstract: RCA-CD401 cd22014 ICAN-6362 vogt 545 44 vogt inductor j9 570 17 013 20 RCA-CD4046B common cathode 7 SEGMENT DISPLAY LT 543 CD22014E CD22011
Contextual Info: RCA COS/MOS Integrated Circuits This DATABOOK contains complete technical information on RCA stand­ ard commercial COS/MOS integrated circuits. It covers the full line of RCA standard A- and B-series digital logic circuits, special-function circuits crosspoint switches and level shifters ,

Contextual Info: TOSHIBA TENTATIVE TC58V32DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V32DC device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 bytes X 16 pages X 512 blocks.

eeprom toshiba L 510

Abstract: TC5832DC TC58V32DC
Contextual Info: TO SH IBA TENTATIVE TC5832DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC5832DC device is a single 5.0-volt 33 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 byte X 16 pages X 512 blocks.