KAG TRANSISTOR Search Results

7445 block diagram

Abstract: ic 7445 76232 7445c binary to bcd ic ttl 7445 TTL OR SN 7445
Contextual Info: TTL MSI TYPES SN5445, SN7445 BCD-TO-DECIMAL DECODERS/DRIVERS _ B U L L E T IN N O . OL-S 7 2 1 1 8 1 6 , D E C E M B E R 1972 FOR USE AS LAMP, RELAY, OR MOS DRIVERS featuring SN 5445 . . . J OR W P AC KAG E SN 7445 . . . J O R N P AC KAG E IT O P V IE W !

54LS145

Contextual Info: SN54145, SN54LS145, SN74145, SN74LS145 BCD TO-DECIIVIAL DECODERS/DRIVERS MARCH 1974 - REVISED MARCH 1988 FOR USE AS LAM P, R E L A Y , OR MOS D R IV E R S S N 5 41 45 . SN 54LS145 J OR W P AC KAG E S N 7 4 1 4 5 . . . N P AC KAG E Full Decoding o f In p u t Logic

SK9124

Abstract: 2N1671B Thyr AMERICAN MICROSEMICONDUCTOR 2N4949 2N490 2N2646 2N491A 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N4871
Contextual Info: American Microsemiconductor manufacturers of Diodes, Transistors, Thyr. 1 of 2 Home Part Number: 2N491A Online Store 2N491A Diodes NPN EPITAXIAL PO W ER TRANSISTO R IN TO 6 6 HERM ETIC Transistors P AC KAG E

Contextual Info: CD4048A Types Th e se types are supplied in 16-lead h erm etic d u a l-in -lin e c e ra m ic p ac kag es D an d F su ffixe s , 1 6 -le a d d u a l-in -lin e ptastic p ack­ ag e (E su ffix), 16 -le a d ce ra m ic flat pac kag e {K su ffix), and in c h ip fo rm (H suffix).

ap 4606

Abstract: nec 2651 ic CD 4047 8 pin ic 3773
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5177 NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Current Consum ption and High Gain PAC KAG E DIMENSIONS Units: mm |Szie|2 = 9.0 dB TYP. @ V ce = 2 V, Ic = 7 mA, f = 2 GHz

transistor sc 1972

Abstract: TIP3055 TIP2955 NPN power transistor TIP2955 transistor PNP TIP2955 texas instruments tip3055
Contextual Info: TIP2955 PNP SILICON POWER TRANSISTOR _ JA N U A R Y 1972 • R E V IS E D M AY 1995 • Designed for Complementary Use with the T1P3055 Series • 90 W at 25°C Case Temperature • 15 A Continuous Collector Current SOT-93 PAC KAG E

nec 13772

Abstract: transistor NEC b 882 transistor NEC D 882 p nec d 882 p transistor transistor transistor NEC b 882 p nec 0882 p 2 sem 2107 71/MT 6351 bm 71/71/MT 6351 bm
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5182 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PAC KAG E DIMENSIONS • Low noise • NF = 1.3 dB ty p . @ Vce = 2 V, Ic = 3 mA, f = 2 GHz • NF = 1.3 dB ty p

2SC2690

Abstract: 2SC2690A A1220A 2SA1220 2SA1220A
Contextual Info: NPN SILICON POWER TRANSISTORS 2SC2690,2SC2690A D ESC R IP TIO N The 2SC 2690, 2SC 2690A are general purpose transistors design­ PAC KAG E D IM E N S IO N S ed for use in audio and radio frequency power amplifiers. FEATURES in millimeters inches 8.5 MAX.

2SK784

Abstract: S300
Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTIO N 2SK784 The 2SK784 is N-channel MOS Field E ffect Power Transistor PAC KAG E DIM EN SIO N S designed fo r sw itching power supplies DC-DC converters. FEATUR ES in m illim e te rs inches

2SK163

Abstract: 2sk163 transistor nec 2sk163 2sk163 nec transistor 2sk163 2SK163 equivalent "2SK163"
Contextual Info: NEC N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR ELECTRON DEVICE D ESCRIPTIO N 2SK163 The 2SK163 is designed fo r use in the firs t stage fo r A F Low Noise am plifier. PAC KAG E DIM EN SIO N S in millimeters inches FEA TU R E S • Low Equivalent Noise Voltage.

Contextual Info: N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK701 D ESC R IPTIO N FEATU RES The 2SK701 is N-Channel MOS Field Effect Power Tran­ sistor designed for solenoid, motor and lamp driver. PA C KAG E DIM EN SIO NS in millimeter* inches • 4 V Gate Drive - Logic level •

2SJ139

Abstract: 2SJ139,J139
Contextual Info: NEC P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SJ139 The 2SJ139 is P-Channel MOS Field E ffect Power Transistor PAC KAG E D IM EN SIO N S designed fo r solenoid, m o to r and lamp driver. FEATURES • 4 V Gate Drive — Logic level —

mpsa65

Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P AC KAG E VCE sat 1F E b v ceo Device Type @ 10mA-(V) Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30

2N5066

Abstract: 2N506
Contextual Info: t\N E S 2N5066 SILICON EPITAXIAL JUNCTION NPN SWITCHING TRANSISTORS G EO M ET R Y 414, (2N5066 ULTRA LOWrEC (sat) • • • • rtc (satl 4 Ohms T Y P IC A L LOWCeb LOW LEA KAG E HIGH BV ebo ELECTRICAL DATA ABSOLUTE MAXIMUM RATINGS SYMBOL 2N 5066 UNITS

tl700

Abstract: 2SC2001 transistor 2sc2001
Contextual Info: SEC NPN SILICON TRANSISTOR ELECTRON DEVICE DESCR IPTIO N 2SC2001 The 2SC2001 is designed fo r use in o u tp u t stage o f portable PAC KAG E D IM E N S IO N S R A D IO and cassette type tape recorder, general purpose applica­ in m illim e te rs inches tions.

KAG TRANSISTOR

Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA809T OUTLINE DIMENSIONS Units in mm FEATURES SM A LL PAC KAG E STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 - LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz HIGH G AIN BANDW IDTH: fr = 9 GHz

diode ssil

Abstract: 2SD1939 PA33 dumper diode KAG TRANSISTOR
Contextual Info: NEC NPN SILICON DARLINGTON TRANSISTOR 2SD1939 D E S C R IP TIO N The 2SD 1939 is a darlington transistor including a dumper diode PAC KAG E D IM E N S IO N S at E-C . in m illim èters inches It is suitable fo r general driving use, such as hammer, solenoid,

D794A

Abstract: d794 2SD794A 2SB744 2SB744A 2SD794 2SB744 NEC IC HE 06 R
Contextual Info: NPN SILICON POWER TRANSISTORS 2SD794,2SD794A D E S C R IP TIO N The 2S D 794, 2S D 794A is an NPN general purpose transistor PAC KAG E D IM E N S IO N S designed for use in Audio frequency amplifier. in millimeters inches FE A T U R E S 8.5 MAX. (0.334 MAX.)

2SB772

Abstract: 2SB77
Contextual Info: PNP SILICON POWER TRANSISTOR 2SB772 D E S C R IP T IO N The 2SB772 is PNP silicon transistor suited for the output PAC KAG E D IM E N S IO N S stage of 3 watts audio am plifier, voltage regulator, DC-DC con­ in millimeters inches verter and relay driver.

MV2107

Abstract: MV2105* equivalent MMBV2109LT1 equivalent 4j diode MV2113 diode mv2105 MMBV2101LT1 MMBV2104 MV2103 MMBV2103LT1
Contextual Info: SILICON EPICAP DIODES . designed in the popular PLASTIC PA C KAG E for high volum e require­ ments of F M Radio and TV tuning and AFC, general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods.

2SC2757

Abstract: 2SC2757-R
Contextual Info: NEC SILICON TRANSISTORS ElECTRON DEVICE 2 S C 2 7 5 7 ,2 S C 2 7 5 7 R UHF/VHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTIO N PAC KAG E DIM EN SIO N S The 2SC2757, 2SC2757R are NPN silicon epitaxial transistor intended fo r in millimeters inches

2SC3840

Contextual Info: NPN SILICON POWER TRANSISTOR 2SC3840 D E S C R IP T IO N The 2SC 3840 is designed fo r use in high speed and high voltage. PAC KAG E D IM E N S IO N S It is suitable fo r switching regulators, DC-DC converters and in m illim ete rs inches ultrasonic appliance applications.

2SA1175

Abstract: TRANSISTOR 2SA1175 2SC2785 HFG TRANSISTOR
Contextual Info: NEC PNP SILICON TRANSISTOR 2 S A 1 175 D E S C R IP TIO N The 2S A 1 175 is designed for use in driver stage of A F amplifier. PAC KAG E D IM E N S IO N S in millimeters inches FEATURES • High hpE and excellent linearity 2.2 M AX. (0.086 M AX.) 4.2 M AX.

Transistor 2sC1674

Abstract: 2SC1674 PA33 VCE-60
Contextual Info: NPN SILICON TRANSISTOR 2SC1674 D E S C R IP TIO N The 2SC1674 is designed for use in FM RF amplifier and PAC KAG E D IM E N S IO N S local oscillator of FM tuner. in millimeters inches 5.2 M A X .' • High gain bandwidth product (f-j-= 6 0 0 M H z T Y P .