KA BAND GAAS MESFET Search Results

pt 11400

Abstract: kaba
Contextual Info: [□Alpha 37-40 GHz GaAs MMIC Amplifier AA038P1-00 Features • Broad Coverage of Ka-Band ■ 14 dB Small Signal Gain ■ 18 dBm Output Power at P 1dB at 38 GHz ■ Dual Drain Bias ■ 0.25 ¡xm Ti/Pt/Au Gates ■ Passivated Surface Description Alpha’s three-stage reactively-matched Ka-band

Contextual Info: Ka-Band Power GaAs MESFET AFM04P2-00 Chip Layout Features • 21 dBm Output Power at 18 GHz ■ High Associated Gain, 9 dB at 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, DC-^0 GHz ■ 0.25 xm Ti/Pt/Au Gates ■ Passivated Surface

MAAPGM0012-DIE

Abstract: MAAPGM0013-DIE Ka-band
Contextual Info: RO-P-DS-3058 - - MAAPGM0013-DIE 200mW Ka-Band Power Amplifier 32.0-36.0 GHz Preliminary Information Features ♦ ♦ ♦ ♦ ♦ 32.0-36.0 GHz GaAs MMIC Amplifier 200mW Output Power Level 32.0-36.0 GHz Operation Variable Drain Voltage 5-6V Operation Self-Aligned MSAG MESFET Process

am/PJ 0419

Contextual Info: ESAlpha Ka Band Power GaAs MESFET Chip AFM06P2-000 Features • 22.5 dBm Output Power @ 18 GHz ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 23% ■ Broadband Operation, D C -40 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface

PJ 0349

Abstract: PJ 0459 jc 817 k MESFET S parameter pj 936 AFM04P2-000 S-12 ka 3525 ka 3525 a 149-188
Contextual Info: ESAlpha Ka Band Power GaAs MESFET Chip AFM04P2-000 Features • 21 dBm Output Power @ 18 GHz ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, D C -40 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface

XDL13.567968

Abstract: 6/18/XDL13.567968
Contextual Info: El]Alpha Ka-Band Power GaAs MESFET AFM06P2-000 Features • 22.5 dBm Output Power at 18 GHz ■ High Associated Gain, 9 dB at 18 GHz ■ High Power Added Efficiency, 23% ■ Broadband Operation, DC-40 GHz ■ 0.25 |im Ti/Pt/Au Gates ■ Passivated Surface

AFM08P2-000

Abstract: ka band gaas MESfet
Contextual Info: Ka Band Power GaAs MESFET Chip AFM08P2-000 Features • 24 dBm Output Power @ 18 GHz 0.110 mm Gate 0.110 mm 0.395 mm ■ High Associated Gain, 8.5 dB @ 18 GHz Drain ■ High Power Added Efficiency, 20% ■ Broadband Operation, DC–40 GHz ■ 0.25 µm Ti/Pd/Au Gates

k band MESFET S parameter

Abstract: 16005-2 k MESFET S parameter 867 905 352 AFM06P2-000 ka band ka band gaas MESfet MESFET ka 2619
Contextual Info: Ka Band Power GaAs MESFET Chip AFM06P2-000 Features • 22.5 dBm Output Power @ 18 GHz Drain 0.110 mm Gate 0.110 mm 0.395 mm ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 23% ■ Broadband Operation, DC–40 GHz ■ 0.25 µm Ti/Pd/Au Gates

AFM06P2-212

Abstract: AFM06P2-213 S-12 ka band 80846
Contextual Info: ESAlpha Ka Band Power GaAs MESFET Chips AFM06P2-212, AFM06P2-213 Features 213 • 22 dBm Output Power @ 18 GHz ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 23% ■ Broadband Operation, D C -18 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface

4232 gm

Abstract: AFM04P2-000
Contextual Info: Ka Band Power GaAs MESFET Chip AFM04P2-000 Features • 21 dBm Output Power @ 18 GHz Drain 0.110 mm Gate 0.110 mm 0.395 mm ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, DC–40 GHz ■ 0.25 µm Ti/Pd/Au Gates

80846

Abstract: 7912 pt 8819 62855 4407 f 4558 ma 8920 pt 2358
Contextual Info: Ka Band Power GaAs MESFET AFM06P2-212, 213 Features 213 Drain • 22 dBm Output Power at 18 GHz ■ High Associated Gain, 9 dB at 18 GHz Source Source ■ High Power Added Efficiency, 23% Gate Drain Source ■ Broadband Operation, DC–18 GHz ■ 0.25 µm Ti/Pd/Au

Contextual Info: ESAlpha Ka Band Power GaAs MESFET Chips AFM06P3-212, AFM06P3-213 Features 213 • 22 dBm Output Power @ 18 GHz ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 23% ■ Broadband Operation, D C -18 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface

kaba

Abstract: 149-188
Contextual Info: Ka-Band Power GaAs MESFET 61Alpha AFM04P2-000 Features • 21 dBm Output Power at 18 GHz ■ High Associated Gain, 9 dB at 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, D C -4 0 GHz ■ 0 .25 jj.m Ti/Pt/Au Gates ■ Passivated Surface

AFM04P2

Abstract: 43171 69318
Contextual Info: Ka Band Power GaAs MESFET Chip AFM04P2-000 Features • 21 dBm Output Power @ 18 GHz Drain 0.110 mm Gate 0.110 mm 0.395 mm ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, DC–40 GHz ■ 0.25 µm Ti/Pd/Au Gates

80846

Abstract: pt 8819 MESFET S parameter ka band gaas MESfet ka band gaas mesfet Package ma 8920 pt 2358 AFM06P3-212 AFM06P3-213
Contextual Info: Ka Band Power GaAs MESFET Chips AFM06P3-212, AFM06P3-213 Features 213 • 22 dBm Output Power @ 18 GHz Drain Source ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 23% Source Gate Drain ■ Broadband Operation, DC–18 GHz Source ■ 0.25 µm Ti/Pd/Au Gates

PJ 0519

Abstract: gm 4511 am/PJ 0529 Characteristic of mesfet AFM08P2-000 S-12 am/PJ 0519
Contextual Info: ESAlpha Ka Band Power GaAs MESFET Chip A F M 08P 2-000 Features • 24 dBm Output Power @ 18 GHz ■ High Associated Gain, 8.5 dB @ 18 GHz ■ High Power Added Efficiency, 20% ■ Broadband Operation, D C -40 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface

pt 23131

Abstract: 80846
Contextual Info: Ka Band Power GaAs MESFET Chips AFM06P2-212, AFM06P2-213 Features 213 • 22 dBm Output Power @ 18 GHz Drain Source ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 23% Source Gate Drain ■ Broadband Operation, DC–18 GHz Source ■ 0.25 µm Ti/Pd/Au Gates

Contextual Info: SAMSUNG ELECTRONICS INC bOE » • 7 ^ 4 1 4 2 0D12012 STfi «SflGK gj HARRIS HMF-03400 Ku-Ka BAND GaAs FET PRELIMINARY DATA SHEET May 1992 Features • 0.25 Micron Gate Length • Ti/Pt/Au Metallization Enhances Durability and Reliability • Optimized for High Frequency

Contextual Info: □ A lp h a Ka-Band Power GaAs MESFET AFM08P2-000 Features • 24 dBm Output Power at 18 G H z ■ High Associated Gain, 8.5 dB at 18 G H z ■ High Power Added Efficiency, 20% ■ Broadband Operation, D C -4 0 GHz ■ 0.25 j.m Ti/Pt/Au Gates ■ Passivated Surface

PT 8830

Contextual Info: Ka-Band Power GaAs MESFET AFM04P2-00 Features Chip Layout • 21 dBm Output Power at 18 G H z ■ High Associated Gain, 9 dB at 18 G H z ■ High Power Added Efficiency, 25% ■ Broadband Operation, D C -4 0 G H z ■ 0.25 urn Ti/Pt/Au Gates ■ Passivated Surface

XDL13.567968

Abstract: max2705 0/XDL13.567968
Contextual Info: Ka-Band Power GaAs MESFET EEAlpha AFM06P2-00 Features Chip Layout • 22.5 dBm Output Power at 18 G H z ■ High Associated Gain, 9 dB at 18 G H z ■ High Power Added Efficiency, 23% ■ Broadband Operation, D C -4 0 G H z ■ 0.25 nm Ti/Pt/Au Gates ■ Passivated Surface

4511 gm

Abstract: gm 4511 AD004T2-00 AD004T2-11 AE002M2-29 AK006R2-00 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10
Contextual Info: ^ Alpha Ka-Band Power GaAs MESFET AFM08P2-00 Chip Layout Features • 24 dBm Output Power at 18 G H z ■ High Associated Gain, 8.5 dB at 18 G H z ■ High Power Added Efficiency, 20% ■ Broadband Operation, D C -4 0 G H z ■ 0.25 |un Ti/Pt/Au Gates ■

Ablebond 84-1*SR4

Contextual Info: 30-35 GHz GaAs EBAlpha MMIC Driver Amplifier AA035P3-00 Features • Broad Coverage of Ka-Band ■ 18 dB Small Signal Gain ■ P1 dB = 17 dBm at 35 GHz ■ Self-Bias Design ■ Low Power Consumption, 260 mA, 6V Typical ■ 0.25 |iim Ti/Pt/Au Gates ■ Passivated Surface

19509

Abstract: 86-395
Contextual Info: Ka-Band Power GaAs MESFET AFM08P2-00 Features Chip Layout 24 dBm Output Power at 18 G H z Drain J a High Associated Gain, 8.5 dB at 18 G H z S3 Il JL JL JL TT 1 1 1 L 1 1 om m pm po High Power Added Efficiency, 20% Broadband Operation, D C -4 0 G H z 0.25 jim Ti/Pt/Au Gates