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Toshiba America Electronic Components


Toshiba America Electronic Components TK8A65W,S5X - Rail/Tube (Alt: TK8A65W,S5X)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TK8A65W,S5X	Tube		24 Weeks	50	1 - 10 - 100 $1.29 1000 $1.01 10000 $1.01	Buy Now
Toshiba America Electronic Components TK8A65D(STA4,Q,M) - Rail/Tube (Alt: TK8A65D(STA4,Q,M))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TK8A65D(STA4,Q,M)	Tube		16 Weeks	50	1 - 10 - 100 $1.05 1000 $0.97 10000 $0.97	Buy Now
Toshiba America Electronic Components TK8A65W,S5X(M Mosfet, N-Ch, 650V, 7.8A, To-220Sis; \|Toshiba TK8A65W, S5X(M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	TK8A65W,S5X(M	Bulk	15		1	1 $1.95 10 $1.66 100 $1.33 1000 $1.10 10000 $0.86	Buy Now
EBV Elektronik	TK8A65W,S5X(M			23 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TK8A65D(STA4,X,M) Halbleiterbauelement, Transistor, Pwr-Mo; \|Toshiba TK8A65D(STA4,X, M)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	TK8A65D(STA4,X,M)	Bulk			1	1 $1.21 10 $1.21 100 $0.77 1000 $0.59 10000 $0.58	Buy Now
EBV Elektronik	TK8A65D(STA4,X,M)			19 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote

K8A65 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K8A65D Abstract: TK8A65D transistor K8A65D k8a65 650VVGS VDD400 Device marking code 1m diode Contextual Info: K8A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: \|Yfs\| = 4.5 S (typ.)	Original	tk8a65d k8a65d transistor k8a65d k8a65 +3650vvgs vdd400 device marking code 1m diode	PDF
Contextual Info: K8A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K8A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 (typ.) High forward transfer admittance: \|Yfs\| = 4.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V)	Original	tk8a65d	PDF
k8a65d Abstract: k8a65 TK8A65D Contextual Info: K8A65D 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ K8A65D 単位: mm ○ スイッチングレギュレータ用 : RDS (ON) = 0.7 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 4.5 S (標準)	Original	tk8a65d sc-67 2-10u1b k8a65d +1k8a65	PDF
transistor K8A65D Abstract: k8a65 K8A65D Contextual Info: K8A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: \|Yfs\| = 4.5 S (typ.)	Original	tk8a65d transistor k8a65d k8a65 k8a65d	PDF
K8A65D Abstract: transistor K8A65D TK8A65D k8a65 transistor 625 10-RDS Contextual Info: K8A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: \|Yfs\| = 4.5 S (typ.)	Original	tk8a65d k8a65d transistor k8a65d k8a65 +2transistor 625 10-rds	PDF
K8A65D Abstract: k8a65 TK8A65D Contextual Info: K8A65D 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ K8A65D 単位: mm ○ スイッチングレギュレータ用 : RDS (ON) = 0.7 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 4.5 S (標準)	Original	tk8a65d sc-67 2-10u1b k8a65d +1k8a65	PDF
k8a65 Abstract: samsung nor flash Contextual Info: K8A6415ET B C NOR Flash Memory 64Mb C-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	k8a6415et 0000h 256words 000000h-0000ffh +488-ball 80x11 k8a65 samsung nor flash	PDF